These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

243 related articles for article (PubMed ID: 22103083)

  • 21. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
    Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH
    Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots.
    Dey AB; Sanyal MK; Farrer I; Perumal K; Ritchie DA; Li Q; Wu J; Dravid V
    Sci Rep; 2018 May; 8(1):7514. PubMed ID: 29760396
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Computational study on the in-plane symmetry of electron wavefunctions in self-assembled InAs/GaAs quantum dots.
    Mukai K; Watanabe K; Nakashima K
    J Nanosci Nanotechnol; 2009 Jan; 9(1):108-14. PubMed ID: 19441284
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.
    Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G
    Beilstein J Nanotechnol; 2018; 9():1075-1084. PubMed ID: 29719758
    [TBL] [Abstract][Full Text] [Related]  

  • 25. InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.
    Wong PS; Liang B; Huffaker DL
    J Nanosci Nanotechnol; 2010 Mar; 10(3):1537-50. PubMed ID: 20355542
    [TBL] [Abstract][Full Text] [Related]  

  • 26. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots.
    Qiu F; Qiu W; Li Y; Wang X; Zhang Y; Zhou X; Lv Y; Sun Y; Deng H; Hu S; Dai N; Wang C; Yang Y; Zhuang Q; Hayne M; Krier A
    Nanotechnology; 2016 Feb; 27(6):065602. PubMed ID: 26684716
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation.
    Hu X; Zhang Y; Guzun D; Ware ME; Mazur YI; Lienau C; Salamo GJ
    Sci Rep; 2020 Jul; 10(1):10930. PubMed ID: 32616829
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer.
    Wyborski P; Podemski P; Wroński PA; Jabeen F; Höfling S; Sęk G
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35161016
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.
    Wang L; Li M; Xiong M; Wang W; Gao H; Zhao L
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7359-61. PubMed ID: 21137934
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices.
    Golovynskyi S; Seravalli L; Datsenko O; Kozak O; Kondratenko SV; Trevisi G; Frigeri P; Gombia E; Lavoryk SR; Golovynska I; Ohulchanskyy TY; Qu J
    Nanoscale Res Lett; 2017 Oct; 12(1):559. PubMed ID: 28983869
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.
    Zieliński M
    J Phys Condens Matter; 2013 Nov; 25(46):465301. PubMed ID: 24129261
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates.
    Tuktamyshev A; Vichi S; Cesura FG; Fedorov A; Carminati G; Lambardi D; Pedrini J; Vitiello E; Pezzoli F; Bietti S; Sanguinetti S
    Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296766
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer.
    He J; Wu Y; Wang KL
    Nanotechnology; 2010 Jun; 21(25):255705. PubMed ID: 20516585
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots.
    Braza V; Fernández D; Ben T; Flores S; Bailey NJ; Carr M; Richards R; Gonzalez D
    Nanomaterials (Basel); 2024 Feb; 14(4):. PubMed ID: 38392748
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots.
    Colleaux F; Lee J; Yu BY; Han I; Choi W; Song JD; Ghibaudo G
    J Nanosci Nanotechnol; 2008 Oct; 8(10):5558-60. PubMed ID: 19198498
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots.
    Wang P; Pan W; Wu X; Liu J; Cao C; Wang S; Gong Q
    Nanoscale Res Lett; 2016 Dec; 11(1):280. PubMed ID: 27255900
    [TBL] [Abstract][Full Text] [Related]  

  • 37. [Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].
    Jia GZ; Yao JH; Zhang CL; Shu Q; Liu RB; Ye XL; Wang ZG
    Guang Pu Xue Yu Guang Pu Fen Xi; 2007 Nov; 27(11):2178-81. PubMed ID: 18260388
    [TBL] [Abstract][Full Text] [Related]  

  • 38. InAs/GaAsSb quantum dot solar cells.
    Hatch S; Wu J; Sablon K; Lam P; Tang M; Jiang Q; Liu H
    Opt Express; 2014 May; 22 Suppl 3():A679-85. PubMed ID: 24922376
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer.
    Chakrabarti S; Halder N; Sengupta S; Ghosh S; Mishima TD; Stanley CR
    Nanotechnology; 2008 Dec; 19(50):505704. PubMed ID: 19942781
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 13.