These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

127 related articles for article (PubMed ID: 22121580)

  • 21. Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks.
    Song HS; Kim SY; Lim DH; Kwon SK; Choi CH; Lee GW; Lee HD
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6131-6134. PubMed ID: 31026922
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Retention characteristics of Schottky barrier tunneling transistor-nano floating gate memory with various side walls.
    Won S; Son D; Kim E; Kim J; Lee K; Park K
    J Nanosci Nanotechnol; 2011 Jan; 11(1):314-7. PubMed ID: 21446446
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor.
    Kim BG; Seo JH; Yoon YJ; Cho MS; Yu E; Lee JH; Cho S; Kang IM
    J Nanosci Nanotechnol; 2018 Sep; 18(9):6593-6597. PubMed ID: 29677840
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Gate-controlled charge transfer in Si:P double quantum dots.
    Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak AS
    Nanotechnology; 2008 May; 19(19):195402. PubMed ID: 21825715
    [TBL] [Abstract][Full Text] [Related]  

  • 25. A Silicon Single-Electron Transistor Memory Operating at Room Temperature.
    Guo L; Leobandung E; Chou SY
    Science; 1997 Jan; 275(5300):649-51. PubMed ID: 9005847
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate.
    Liu F; Ibukuro K; Husain MK; Li Z; Hillier J; Tomita I; Tsuchiya Y; Rutt H; Saito S
    Nanotechnology; 2018 Nov; 29(47):475201. PubMed ID: 30191886
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.
    Nakaharai S; Yamamoto M; Ueno K; Lin YF; Li SL; Tsukagoshi K
    ACS Nano; 2015 Jun; 9(6):5976-83. PubMed ID: 25988597
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits.
    Fahad HM; Smith CE; Rojas JP; Hussain MM
    Nano Lett; 2011 Oct; 11(10):4393-9. PubMed ID: 21923117
    [TBL] [Abstract][Full Text] [Related]  

  • 29. A CMOS silicon spin qubit.
    Maurand R; Jehl X; Kotekar-Patil D; Corna A; Bohuslavskyi H; Laviéville R; Hutin L; Barraud S; Vinet M; Sanquer M; De Franceschi S
    Nat Commun; 2016 Nov; 7():13575. PubMed ID: 27882926
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Hybrid porphyrin-silicon nanowire field-effect transistor by opto-electrical excitation.
    Seol ML; Choi SJ; Choi JM; Ahn JH; Choi YK
    ACS Nano; 2012 Sep; 6(9):7885-92. PubMed ID: 22882562
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump Phenomenon.
    Kwon YS; Lee SH; Kim Y; Kim G; Kim JH; Kim S
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4182-4187. PubMed ID: 31968438
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS
    Park J; Ra C; Lim J; Jeon J
    Nanomaterials (Basel); 2022 Jul; 12(13):. PubMed ID: 35808135
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Schottky barrier thin film transistors using solution-processed n-ZnO.
    Adl AH; Ma A; Gupta M; Benlamri M; Tsui YY; Barlage DW; Shankar K
    ACS Appl Mater Interfaces; 2012 Mar; 4(3):1423-8. PubMed ID: 22387678
    [TBL] [Abstract][Full Text] [Related]  

  • 34. The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors.
    Lin KC; Twu MJ; Deng RH; Liu CH
    J Nanosci Nanotechnol; 2015 Apr; 15(4):2673-9. PubMed ID: 26353480
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates.
    Wang W; Kim KL; Cho SM; Lee JH; Park C
    ACS Appl Mater Interfaces; 2016 Dec; 8(49):33863-33873. PubMed ID: 27960399
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Novel H⁺-Ion Sensor Based on a Gated Lateral BJT Pair.
    Yuan H; Zhang J; Cao C; Zhang G; Zhang S
    Sensors (Basel); 2015 Dec; 16(1):. PubMed ID: 26703625
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure.
    An HD; Lee SH; Park J; Min SR; Kim GU; Yoon YJ; Seo JH; Cho MS; Jang J; Bae JH; Lee SH; Kang IM
    Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234653
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter.
    Sridhar M; Xu D; Kang Y; Hmelo AB; Feldman LC; Li D; Li D
    J Appl Phys; 2008 May; 103(10):104701-10470110. PubMed ID: 19479001
    [TBL] [Abstract][Full Text] [Related]  

  • 39. On-chip metal/polypyrrole quasi-reference electrodes for robust ISFET operation.
    Duarte-Guevara C; Swaminathan VV; Burgess M; Reddy B; Salm E; Liu YS; Rodriguez-Lopez J; Bashir R
    Analyst; 2015 May; 140(10):3630-41. PubMed ID: 25869990
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Porphyrin-silicon hybrid field-effect transistor with individually addressable top-gate structure.
    Seol ML; Choi SJ; Kim CH; Moon DI; Choi YK
    ACS Nano; 2012 Jan; 6(1):183-9. PubMed ID: 22148941
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 7.