These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
130 related articles for article (PubMed ID: 22121677)
1. Nano-scaled Pt/Ag/Ni/Au contacts on p-type GaN for low contact resistance and high reflectivity. Kwon YW; Ju IC; Kim SK; Choi YS; Kim MH; Yoo SH; Kang DH; Sung HK; Shin K; Ko CG J Nanosci Nanotechnol; 2011 Jul; 11(7):6157-61. PubMed ID: 22121677 [TBL] [Abstract][Full Text] [Related]
2. Highly Reflective Nonalloyed Ni/Ag/Pt Contact to Mg-Si Codoped p-GaN for Enhanced Efficiency of Light-Emitting Diodes. Oh M; Kim H J Nanosci Nanotechnol; 2015 Oct; 15(10):7531-6. PubMed ID: 26726365 [TBL] [Abstract][Full Text] [Related]
3. Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN. Hou W; Stark C; You S; Zhao L; Detchprohm T; Wetzel C Appl Opt; 2012 Aug; 51(23):5596-600. PubMed ID: 22885570 [TBL] [Abstract][Full Text] [Related]
4. Ni-Cu Nanoparticles-Embedded Ag-Based Reflector for High-Efficiency Light-Emitting Diodes. Chu EK; Ha K; Noh BR; Kwon YJ; Oh S; Im J; Jang J; Cho S; Kim KK J Nanosci Nanotechnol; 2020 Nov; 20(11):6732-6737. PubMed ID: 32604506 [TBL] [Abstract][Full Text] [Related]
5. n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces. Guo Y; Pan F; Ren Y; Yao B; Yang C; Ye M; Wang Y; Li J; Zhang X; Yan J; Yang J; Lu J Phys Chem Chem Phys; 2018 Oct; 20(37):24239-24249. PubMed ID: 30209481 [TBL] [Abstract][Full Text] [Related]
6. Interface observation in Au/Ni/p-GaN studied by HREM and energy-filtering TEM. Lim SH; Ra TY; Kim WY J Electron Microsc (Tokyo); 2003; 52(5):459-64. PubMed ID: 14700077 [TBL] [Abstract][Full Text] [Related]
7. Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer. Son JH; Jung GH; Lee JL Opt Lett; 2008 Dec; 33(24):2907-9. PubMed ID: 19079488 [TBL] [Abstract][Full Text] [Related]
8. Optimization of annealing conditions for Ag/p-GaN ohmic contacts. Pan S; Lu Y; Liang Z; Xu C; Pan D; Zhou Y; Zhang R; Zheng Y Appl Phys A Mater Sci Process; 2021; 127(11):870. PubMed ID: 34720447 [TBL] [Abstract][Full Text] [Related]
10. Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN. Slimani Tlemcani T; Mauduit C; Bah M; Zhang M; Charles M; Gwoziecki R; Yvon A; Alquier D ACS Appl Mater Interfaces; 2023 Feb; 15(6):8723-8729. PubMed ID: 36732675 [TBL] [Abstract][Full Text] [Related]
11. Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes. Han SC; Kim JK; Kim JY; Lee DM; Yoon JS; Kim JK; Schubert EF; Lee JM J Nanosci Nanotechnol; 2013 Aug; 13(8):5715-8. PubMed ID: 23882823 [TBL] [Abstract][Full Text] [Related]
12. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires. Herrero AM; Blanchard PT; Sanders A; Brubaker MD; Sanford NA; Roshko A; Bertness KA Nanotechnology; 2012 Sep; 23(36):365203. PubMed ID: 22910019 [TBL] [Abstract][Full Text] [Related]
13. Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar n-type GaN. Wang L; Liu Z; Guo E; Yang H; Yi X; Wang G ACS Appl Mater Interfaces; 2013 Jun; 5(12):5797-803. PubMed ID: 23716508 [TBL] [Abstract][Full Text] [Related]
14. High performance of GaN-based flip-chip light-emitting diodes with hole-shape patterned ITO ohmic contact layer and AgIn reflector. Lee SH; Baek JH; Kim TH; Park LS J Nanosci Nanotechnol; 2011 Oct; 11(10):8695-9. PubMed ID: 22400245 [TBL] [Abstract][Full Text] [Related]
15. Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode. Chandramohan S; Kang JH; Ryu BD; Yang JH; Kim S; Kim H; Park JB; Kim TY; Cho BJ; Suh EK; Hong CH ACS Appl Mater Interfaces; 2013 Feb; 5(3):958-64. PubMed ID: 23305126 [TBL] [Abstract][Full Text] [Related]
16. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts. Zhou S; Liu X; Gao Y; Liu Y; Liu M; Liu Z; Gui C; Liu S Opt Express; 2017 Oct; 25(22):26615-26627. PubMed ID: 29092150 [TBL] [Abstract][Full Text] [Related]
17. Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer. Park JS; Han J; Seong TY Opt Express; 2014 May; 22 Suppl 3():A759-64. PubMed ID: 24922383 [TBL] [Abstract][Full Text] [Related]
18. Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs. Liu X; Zhou S; Gao Y; Hu H; Liu Y; Gui C; Liu S Appl Opt; 2017 Dec; 56(34):9502-9509. PubMed ID: 29216064 [TBL] [Abstract][Full Text] [Related]
19. Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes. Kwak JS; Song JO; Seong TY; Kim BI; Cho J; Sone C; Park Y J Nanosci Nanotechnol; 2006 Nov; 6(11):3547-50. PubMed ID: 17252808 [TBL] [Abstract][Full Text] [Related]
20. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT. Wang C; Kim NY Nanoscale Res Lett; 2012 Feb; 7(1):107. PubMed ID: 22313812 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]