These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

172 related articles for article (PubMed ID: 22136595)

  • 1. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control.
    Niu L; Hao Z; Hu J; Hu Y; Wang L; Luo Y
    Nanoscale Res Lett; 2011 Dec; 6(1):611. PubMed ID: 22136595
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
    Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
    Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Growth of Ga
    Zheng DG; Min S; Kim J; Han DP
    Materials (Basel); 2023 Dec; 17(1):. PubMed ID: 38204021
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence.
    Sarwar AT; May BJ; Chisholm MF; Duscher GJ; Myers RC
    Nanoscale; 2016 Apr; 8(15):8024-32. PubMed ID: 27019949
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures.
    Growden TA; Zhang W; Brown ER; Storm DF; Meyer DJ; Berger PR
    Light Sci Appl; 2018; 7():17150. PubMed ID: 30839526
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Photon color conversion enhancement of colloidal quantum dots inserted into a subsurface laterally-extended GaN nano-porous structure in an InGaN/GaN quantum-well template.
    Chen CH; Kuo SY; Feng HY; Li ZH; Yang S; Wu SH; Hsieh HY; Lin YS; Lee YC; Chen WC; Wu PH; Chen JC; Huang YY; Lu YJ; Kuo Y; Lin CF; Yang CC
    Opt Express; 2023 Feb; 31(4):6327-6341. PubMed ID: 36823892
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission.
    Vermeersch R; Jacopin G; Castioni F; Rouvière JL; García-Cristóbal A; Cros A; Pernot J; Daudin B
    Nanotechnology; 2023 Apr; 34(27):. PubMed ID: 37023726
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization.
    Subedi RC; Min JW; Mitra S; Li KH; Ajia I; Stegenburgs E; Anjum DH; Conroy M; Moore K; Bangert U; Roqan IS; Ng TK; Ooi BS
    ACS Appl Mater Interfaces; 2020 Sep; 12(37):41649-41658. PubMed ID: 32869977
    [TBL] [Abstract][Full Text] [Related]  

  • 9. (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.
    Zaiter A; Nikitskiy N; Nemoz M; Vuong P; Ottapilakkal V; Sundaram S; Ougazzaden A; Brault J
    Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686912
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots.
    Almalawi D; Lopatin S; Mitra S; Flemban T; Siladie AM; Gayral B; Daudin B; Roqan IS
    ACS Appl Mater Interfaces; 2020 Jul; 12(30):34058-34064. PubMed ID: 32623885
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
    Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
    Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Substrate effects on the strain relaxation in GaN/AlN short-period superlattices.
    Kladko V; Kuchuk A; Lytvyn P; Yefanov O; Safriuk N; Belyaev A; Mazur YI; Decuir EA; Ware ME; Salamo GJ
    Nanoscale Res Lett; 2012 Jun; 7(1):289. PubMed ID: 22672771
    [TBL] [Abstract][Full Text] [Related]  

  • 13. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters.
    Jmerik V; Nechaev D; Semenov A; Evropeitsev E; Shubina T; Toropov A; Yagovkina M; Alekseev P; Borodin B; Orekhova K; Kozlovsky V; Zverev M; Gamov N; Wang T; Wang X; Pristovsek M; Amano H; Ivanov S
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36985973
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption.
    Udai A; Aiello A; Aggarwal T; Saha D; Bhattacharya P
    ACS Appl Mater Interfaces; 2021 Sep; 13(37):45033-45039. PubMed ID: 34495630
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electromechanically Coupled III-N Quantum Dots.
    Barettin D; Sakharov AV; Tsatsulnikov AF; Nikolaev AE; Cherkashin N
    Nanomaterials (Basel); 2023 Jan; 13(2):. PubMed ID: 36677994
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography.
    Liu G; Zhao H; Zhang J; Park JH; Mawst LJ; Tansu N
    Nanoscale Res Lett; 2011 Apr; 6(1):342. PubMed ID: 21711862
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination.
    Peres M; Magalhães S; Fellmann V; Daudin B; Neves AJ; Alves E; Lorenz K; Monteiro T
    Nanoscale Res Lett; 2011 May; 6(1):378. PubMed ID: 21711897
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.
    Bougerol C; Songmuang R; Camacho D; Niquet YM; Mata R; Cros A; Daudin B
    Nanotechnology; 2009 Jul; 20(29):295706. PubMed ID: 19567953
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability.
    Yang W; Li J; Zhang Y; Huang PK; Lu TC; Kuo HC; Li S; Yang X; Chen H; Liu D; Kang J
    Sci Rep; 2014 Jun; 4():5166. PubMed ID: 24898569
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy.
    Gucciardi PG; Vinattieri A; Colocci M; Damilano B; Grandjean N; Semond F; Massies J
    J Microsc; 2001 Apr; 202(Pt 1):212-7. PubMed ID: 11298895
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.