142 related articles for article (PubMed ID: 22142411)
1. Room-temperature photodetection dynamics of single GaN nanowires.
González-Posada F; Songmuang R; Den Hertog M; Monroy E
Nano Lett; 2012 Jan; 12(1):172-6. PubMed ID: 22142411
[TBL] [Abstract][Full Text] [Related]
2. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts.
Li L; Auer E; Liao M; Fang X; Zhai T; Gautam UK; Lugstein A; Koide Y; Bando Y; Golberg D
Nanoscale; 2011 Mar; 3(3):1120-6. PubMed ID: 21203645
[TBL] [Abstract][Full Text] [Related]
3. Efficient single photon detection from 500 nm to 5 μm wavelength.
Marsili F; Bellei F; Najafi F; Dane AE; Dauler EA; Molnar RJ; Berggren KK
Nano Lett; 2012 Sep; 12(9):4799-804. PubMed ID: 22889386
[TBL] [Abstract][Full Text] [Related]
4. Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction.
Liu N; Tian W; Zhang X; Su J; Zhang Q; Gao Y
Opt Express; 2012 Aug; 20(18):20748-53. PubMed ID: 23037124
[TBL] [Abstract][Full Text] [Related]
5. Size-dependent photoconductivity in MBE-grown GaN-nanowires.
Calarco R; Marso M; Richter T; Aykanat AI; Meijers R; V D Hart A; Stoica T; Lüth H
Nano Lett; 2005 May; 5(5):981-4. PubMed ID: 15884906
[TBL] [Abstract][Full Text] [Related]
6. Proposal for a superconducting photon number resolving detector with large dynamic range.
Jahanmirinejad S; Fiore A
Opt Express; 2012 Feb; 20(5):5017-28. PubMed ID: 22418306
[TBL] [Abstract][Full Text] [Related]
7. Compactly packaged superconducting nanowire single-photon detector with an optical cavity for multichannel system.
Miki S; Takeda M; Fujiwara M; Sasaki M; Wang Z
Opt Express; 2009 Dec; 17(26):23557-64. PubMed ID: 20052064
[TBL] [Abstract][Full Text] [Related]
8. High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts.
Zou R; Zhang Z; Hu J; Sang L; Koide Y; Liao M
Nanotechnology; 2013 Dec; 24(49):495701. PubMed ID: 24231924
[TBL] [Abstract][Full Text] [Related]
9. M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.
Koester R; Hwang JS; Salomon D; Chen X; Bougerol C; Barnes JP; Dang Dle S; Rigutti L; de Luna Bugallo A; Jacopin G; Tchernycheva M; Durand C; Eymery J
Nano Lett; 2011 Nov; 11(11):4839-45. PubMed ID: 21967509
[TBL] [Abstract][Full Text] [Related]
10. All-(111) surface silicon nanowires: selective functionalization for biosensing applications.
Masood MN; Chen S; Carlen ET; van den Berg A
ACS Appl Mater Interfaces; 2010 Dec; 2(12):3422-8. PubMed ID: 21090766
[TBL] [Abstract][Full Text] [Related]
11. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
Tomioka K; Motohisa J; Hara S; Hiruma K; Fukui T
Nano Lett; 2010 May; 10(5):1639-44. PubMed ID: 20377199
[TBL] [Abstract][Full Text] [Related]
12. Plasmon resonance in individual nanogap electrodes studied using graphene nanoconstrictions as photodetectors.
Shi SF; Xu X; Ralph DC; McEuen PL
Nano Lett; 2011 Apr; 11(4):1814-8. PubMed ID: 21434673
[TBL] [Abstract][Full Text] [Related]
13. Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures.
Sang L; Hu J; Zou R; Koide Y; Liao M
Sci Rep; 2013; 3():2368. PubMed ID: 23917790
[TBL] [Abstract][Full Text] [Related]
14. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Natrella M; Rouvalis E; Liu CP; Liu H; Renaud CC; Seeds AJ
Opt Express; 2012 Aug; 20(17):19279-88. PubMed ID: 23038569
[TBL] [Abstract][Full Text] [Related]
15. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
Chuang LC; Sedgwick FG; Chen R; Ko WS; Moewe M; Ng KW; Tran TT; Chang-Hasnain C
Nano Lett; 2011 Feb; 11(2):385-90. PubMed ID: 21174451
[TBL] [Abstract][Full Text] [Related]
16. Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.
Han CB; He C; Meng XB; Wan YR; Tian YT; Zhang YJ; Li XJ
Opt Express; 2012 Feb; 20(5):5636-43. PubMed ID: 22418371
[TBL] [Abstract][Full Text] [Related]
17. Quantum interference control of femtosecond, microA current bursts in single GaAs nanowires.
Ruppert C; Thunich S; Abstreiter G; Fontcuberta i Morral A; Holleitner AW; Betz M
Nano Lett; 2010 May; 10(5):1799-804. PubMed ID: 20373775
[TBL] [Abstract][Full Text] [Related]
18. ZnCdSe/ZnCdMgSe quantum well infrared photodetector.
Ravikumar AP; Alfaro-Martinez A; Chen G; Zhao K; Tamargo MC; Gmachl CF; Shen A
Opt Express; 2012 Sep; 20(20):22391-7. PubMed ID: 23037387
[TBL] [Abstract][Full Text] [Related]
19. Nanoantenna coupled UV subwavelength photodetectors based on GaN.
Butun S; Cinel NA; Ozbay E
Opt Express; 2012 Jan; 20(3):2649-56. PubMed ID: 22330502
[TBL] [Abstract][Full Text] [Related]
20. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.
Wu J; Shao D; Dorogan VG; Li AZ; Li S; DeCuir EA; Manasreh MO; Wang ZM; Mazur YI; Salamo GJ
Nano Lett; 2010 Apr; 10(4):1512-6. PubMed ID: 20356102
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]