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6. Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor. Shin HC; Jang Y; Kim TH; Lee JH; Oh DH; Ahn SJ; Lee JH; Moon Y; Park JH; Yoo SJ; Park CY; Whang D; Yang CW; Ahn JR J Am Chem Soc; 2015 Jun; 137(21):6897-905. PubMed ID: 25973636 [TBL] [Abstract][Full Text] [Related]
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