These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 22214422)

  • 1. Silicon nanowire Esaki diodes.
    Schmid H; Bessire C; Björk MT; Schenk A; Riel H
    Nano Lett; 2012 Feb; 12(2):699-703. PubMed ID: 22214422
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Vertical nanowire heterojunction devices based on a clean Si/Ge interface.
    Chen L; Fung WY; Lu W
    Nano Lett; 2013; 13(11):5521-7. PubMed ID: 24134685
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.
    Dey AW; Svensson J; Ek M; Lind E; Thelander C; Wernersson LE
    Nano Lett; 2013; 13(12):5919-24. PubMed ID: 24224956
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes.
    Liu CY; Tien KY; Chiu PY; Wu YJ; Chuang Y; Kao HS; Li JY
    Adv Mater; 2022 Oct; 34(41):e2203888. PubMed ID: 36030362
    [TBL] [Abstract][Full Text] [Related]  

  • 5. High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.
    Ganjipour B; Dey AW; Borg BM; Ek M; Pistol ME; Dick KA; Wernersson LE; Thelander C
    Nano Lett; 2011 Oct; 11(10):4222-6. PubMed ID: 21894940
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Au transport in catalyst coarsening and Si nanowire formation.
    Kim BJ; Tersoff J; Kodambaka S; Jang JS; Stach EA; Ross FM
    Nano Lett; 2014 Aug; 14(8):4554-9. PubMed ID: 25040757
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.
    Bessire CD; Björk MT; Schmid H; Schenk A; Reuter KB; Riel H
    Nano Lett; 2011 Oct; 11(10):4195-9. PubMed ID: 21875101
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Growth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires.
    Wacaser BA; Reuter MC; Khayyat MM; Wen CY; Haight R; Guha S; Ross FM
    Nano Lett; 2009 Sep; 9(9):3296-301. PubMed ID: 19639967
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Direct measurement of individual deep traps in single silicon nanowires.
    Koren E; Elias G; Boag A; Hemesath ER; Lauhon LJ; Rosenwaks Y
    Nano Lett; 2011 Jun; 11(6):2499-502. PubMed ID: 21591656
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size.
    Lee SH; Lee TI; Lee SJ; Lee SM; Yun I; Myoung JM
    ACS Appl Mater Interfaces; 2015 Jan; 7(1):929-34. PubMed ID: 25526518
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires.
    Wen CY; Reuter MC; Tersoff J; Stach EA; Ross FM
    Nano Lett; 2010 Feb; 10(2):514-9. PubMed ID: 20041666
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Approaching the ideal elastic strain limit in silicon nanowires.
    Zhang H; Tersoff J; Xu S; Chen H; Zhang Q; Zhang K; Yang Y; Lee CS; Tu KN; Li J; Lu Y
    Sci Adv; 2016 Aug; 2(8):e1501382. PubMed ID: 27540586
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth.
    Ke Y; Weng X; Redwing JM; Eichfeld CM; Swisher TR; Mohney SE; Habib YM
    Nano Lett; 2009 Dec; 9(12):4494-9. PubMed ID: 19904918
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon.
    Koto M; Marshall AF; Goldthorpe IA; McIntyre PC
    Small; 2010 May; 6(9):1032-7. PubMed ID: 20411571
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Doping limits of grown in situ doped silicon nanowires using phosphine.
    Schmid H; Björk MT; Knoch J; Karg S; Riel H; Riess W
    Nano Lett; 2009 Jan; 9(1):173-7. PubMed ID: 19099512
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices.
    Bartmann MG; Glassner S; Sistani M; Rurali R; Palummo M; Cartoixà X; Smoliner J; Lugstein A
    ACS Appl Mater Interfaces; 2024 Jul; 16(26):33789-33795. PubMed ID: 38899807
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst.
    Eichfeld CM; Gerstl SS; Prosa T; Ke Y; Redwing JM; Mohney SE
    Nanotechnology; 2012 Jun; 23(21):215205. PubMed ID: 22552162
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.
    Park JH; Kim MH; Kissinger S; Lee CR
    Nanoscale; 2013 Apr; 5(7):2959-66. PubMed ID: 23455517
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Origin of diameter-dependent growth direction of silicon nanowires.
    Wang CX; Hirano M; Hosono H
    Nano Lett; 2006 Jul; 6(7):1552-5. PubMed ID: 16834448
    [TBL] [Abstract][Full Text] [Related]  

  • 20. ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes.
    Lao CS; Liu J; Gao P; Zhang L; Davidovic D; Tummala R; Wang ZL
    Nano Lett; 2006 Feb; 6(2):263-6. PubMed ID: 16464047
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.