161 related articles for article (PubMed ID: 22214531)
1. Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy.
Cai W; Che Y; Pelz JP; Hemesath ER; Lauhon LJ
Nano Lett; 2012 Feb; 12(2):694-8. PubMed ID: 22214531
[TBL] [Abstract][Full Text] [Related]
2. Direct deposition of size-tunable Au nanoparticles on silicon oxide nanowires.
Kim JH; An HH; Kim HS; Kim YH; Yoon CS
J Colloid Interface Sci; 2009 Sep; 337(1):289-93. PubMed ID: 19477456
[TBL] [Abstract][Full Text] [Related]
3. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.
Habicht S; Zhao QT; Feste SF; Knoll L; Trellenkamp S; Ghyselen B; Mantl S
Nanotechnology; 2010 Mar; 21(10):105701. PubMed ID: 20154367
[TBL] [Abstract][Full Text] [Related]
4. Fabrication of surface plasmon-coupled si nanodots in au-embedded silicon oxide nanowires.
Park GS; Kwon H; Lee EK; Kim SK; Lee JH; Li XS; Chung JG; Heo S; Song IY; Lee JH; Choi BL; Kim JM
Adv Mater; 2010 Jun; 22(22):2421-5. PubMed ID: 20397152
[No Abstract] [Full Text] [Related]
5. Coexistence of 1D and quasi-0D photoluminescence from single silicon nanowires.
Valenta J; Bruhn B; Linnros J
Nano Lett; 2011 Jul; 11(7):3003-9. PubMed ID: 21711002
[TBL] [Abstract][Full Text] [Related]
6. Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals.
Ghosh R; Giri PK; Imakita K; Fujii M
Nanotechnology; 2014 Jan; 25(4):045703. PubMed ID: 24394591
[TBL] [Abstract][Full Text] [Related]
7. Spatially resolved plasmonically enhanced photocurrent from Au nanoparticles on a Si nanowire.
Hyun JK; Lauhon LJ
Nano Lett; 2011 Jul; 11(7):2731-4. PubMed ID: 21639402
[TBL] [Abstract][Full Text] [Related]
8. Fabrication of DNA nanowires by orthogonal self-assembly and DNA intercalation on a Au patterned Si/SiO2 surface.
Kobayashi K; Tonegawa N; Fujii S; Hikida J; Nozoye H; Tsutsui K; Wada Y; Chikira M; Haga MA
Langmuir; 2008 Nov; 24(22):13203-11. PubMed ID: 18939806
[TBL] [Abstract][Full Text] [Related]
9. Analysis of contact interfaces for single GaN nanowire devices.
Herrero AM; Blanchard PT; Bertness KA
J Vis Exp; 2013 Nov; (81):e50738. PubMed ID: 24300746
[TBL] [Abstract][Full Text] [Related]
10. Reversible electrowetting on superhydrophobic double-nanotextured surfaces.
Lapierre F; Thomy V; Coffinier Y; Blossey R; Boukherroub R
Langmuir; 2009 Jun; 25(11):6551-8. PubMed ID: 19402607
[TBL] [Abstract][Full Text] [Related]
11. Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer.
Yoon HH; Jung S; Choi G; Kim J; Jeon Y; Kim YS; Jeong HY; Kim K; Kwon SY; Park K
Nano Lett; 2017 Jan; 17(1):44-49. PubMed ID: 27960259
[TBL] [Abstract][Full Text] [Related]
12. Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size.
Lee SH; Lee TI; Lee SJ; Lee SM; Yun I; Myoung JM
ACS Appl Mater Interfaces; 2015 Jan; 7(1):929-34. PubMed ID: 25526518
[TBL] [Abstract][Full Text] [Related]
13. Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires.
Lord AM; Ramasse QM; Kepaptsoglou DM; Periwal P; Ross FM; Wilks SP
Nano Lett; 2017 Nov; 17(11):6626-6636. PubMed ID: 29024594
[TBL] [Abstract][Full Text] [Related]
14. Vapor-liquid-solid growth of silicon nanowires using organosilane as precursor.
Yang HJ; Yuan FW; Tuan HY
Chem Commun (Camb); 2010 Sep; 46(33):6105-7. PubMed ID: 20657918
[TBL] [Abstract][Full Text] [Related]
15. Field-effect modulation of thermoelectric properties in multigated silicon nanowires.
Curtin BM; Codecido EA; Krämer S; Bowers JE
Nano Lett; 2013; 13(11):5503-8. PubMed ID: 24138582
[TBL] [Abstract][Full Text] [Related]
16. Mapping carrier diffusion in single silicon core-shell nanowires with ultrafast optical microscopy.
Seo MA; Yoo J; Dayeh SA; Picraux ST; Taylor AJ; Prasankumar RP
Nano Lett; 2012 Dec; 12(12):6334-8. PubMed ID: 23130749
[TBL] [Abstract][Full Text] [Related]
17. Barrier height measurement of metal contacts to Si nanowires using internal photoemission of hot carriers.
Yoon K; Hyun JK; Connell JG; Amit I; Rosenwaks Y; Lauhon LJ
Nano Lett; 2013; 13(12):6183-8. PubMed ID: 24224834
[TBL] [Abstract][Full Text] [Related]
18. Silicon nanowire oxidation: the influence of sidewall structure and gold distribution.
Sivakov VA; Scholz R; Syrowatka F; Falk F; Gösele U; Christiansen SH
Nanotechnology; 2009 Oct; 20(40):405607. PubMed ID: 19738306
[TBL] [Abstract][Full Text] [Related]
19. ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes.
Lao CS; Liu J; Gao P; Zhang L; Davidovic D; Tummala R; Wang ZL
Nano Lett; 2006 Feb; 6(2):263-6. PubMed ID: 16464047
[TBL] [Abstract][Full Text] [Related]
20. On the nature of various growth facets at the interfaces of gold catalyzed-silicon nanowires.
Cho TS; Hwang GS
J Nanosci Nanotechnol; 2013 May; 13(5):3480-2. PubMed ID: 23858883
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
