These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

124 related articles for article (PubMed ID: 22221384)

  • 1. Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen.
    Dong M; Wang H; Ye C; Shen L; Wang Y; Zhang J; Ye Y
    Nanoscale Res Lett; 2012 Jan; 7(1):31. PubMed ID: 22221384
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.
    Wang Y; Wang H; Ye C; Zhang J; Wang H; Jiang Y
    ACS Appl Mater Interfaces; 2011 Oct; 3(10):3813-8. PubMed ID: 21910462
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Interface Optimization and Performance Enhancement of Er
    Wu Q; Yu Q; He G; Wang W; Lu J; Yao B; Liu S; Fang Z
    Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299643
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics.
    Jo JW; Kim KH; Kim J; Ban SG; Kim YH; Park SK
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):2679-2687. PubMed ID: 29280381
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Thermal effect of annealing-temperature on solution-processed high-
    Zhou S; Zhang J; Fang Z; Ning H; Cai W; Zhu Z; Liang Z; Yao R; Guo D; Peng J
    RSC Adv; 2019 Dec; 9(72):42415-42422. PubMed ID: 35542877
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.
    Hussain S; Singh J; Vikraman D; Singh AK; Iqbal MZ; Khan MF; Kumar P; Choi DC; Song W; An KS; Eom J; Lee WG; Jung J
    Sci Rep; 2016 Aug; 6():30791. PubMed ID: 27492282
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Structure and Dielectric Property of High-k ZrO
    Liu J; Li J; Wu J; Sun J
    Nanoscale Res Lett; 2019 May; 14(1):154. PubMed ID: 31065821
    [TBL] [Abstract][Full Text] [Related]  

  • 8. AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO
    Lin YS; Lu CC
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374767
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Dielectric Enhancement of Atomic Layer-Deposited Al
    Zhu B; Wu X; Liu WJ; Ding SJ; Zhang DW; Fan Z
    Nanoscale Res Lett; 2019 Feb; 14(1):53. PubMed ID: 30742246
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film.
    Jeon W; Yoo S; Kim HK; Lee W; An CH; Chung MJ; Cho CJ; Kim SK; Hwang CS
    ACS Appl Mater Interfaces; 2014 Dec; 6(23):21632-7. PubMed ID: 25402821
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.
    Quah HJ; Cheong KY
    Nanoscale Res Lett; 2013 Jan; 8(1):53. PubMed ID: 23360596
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effect of a magnetron-sputtered ZrSiN/ZrO2 film on the bond strength of commercially pure titanium to porcelain.
    Wang G; Wang X; Zhao Y; Guo T
    J Prosthet Dent; 2013 May; 109(5):313-8. PubMed ID: 23684281
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-Performance TiO
    Lee S; Han G; Kim KH; Shim D; Go D; An J
    ACS Appl Mater Interfaces; 2024 Jul; 16(26):34419-34427. PubMed ID: 38886188
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Microstructure and dielectric characteristics of high-k tetragonal ZrO2 films with various thicknesses processed by sol-gel method.
    Hwang SM; Lee SM; Choi JH; Park K; Joo J; Lim JH; Kim H
    J Nanosci Nanotechnol; 2012 Apr; 12(4):3350-4. PubMed ID: 22849122
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Incorporation of Si and Zr into Pure HfO₂ and Its Effects on Dielectric Integrity.
    Kim H; Choi P; Lee N; Kim S; Koo K; Lee J; Choi B
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5899-5903. PubMed ID: 29677713
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.
    Meena JS; Chu MC; Wu CS; Ravipati S; Ko FH
    J Nanosci Nanotechnol; 2011 Aug; 11(8):6858-67. PubMed ID: 22103091
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Impact of oxidation and reduction annealing on the electrical properties of Ge/La
    Henkel C; Hellström PE; Ostling M; Stöger-Pollach M; Bethge O; Bertagnolli E
    Solid State Electron; 2012 Aug; 74(5):7-12. PubMed ID: 23483756
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.
    Khan ZN; Ahmed S; Ali M
    PLoS One; 2016; 11(8):e0161736. PubMed ID: 27571412
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Border Trap Characterizations of Al
    Rahman MM; Kim DH; Kim TW
    Nanomaterials (Basel); 2020 Mar; 10(3):. PubMed ID: 32183413
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor.
    Cho JH; Lee SI; Kim JH; Yim SJ; Shin HS; Han MJ; Chae WM; Lee SD; Ahn CY; Kim MW
    J Nanosci Nanotechnol; 2015 Jan; 15(1):382-5. PubMed ID: 26328365
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.