These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
152 related articles for article (PubMed ID: 22248479)
1. Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition. MacLeod JM; Cojocaru CV; Ratto F; Harnagea C; Bernardi A; Alonso MI; Rosei F Nanotechnology; 2012 Feb; 23(6):065603. PubMed ID: 22248479 [TBL] [Abstract][Full Text] [Related]
2. Si/Ge intermixing during Ge Stranski-Krastanov growth. Portavoce A; Hoummada K; Ronda A; Mangelinck D; Berbezier I Beilstein J Nanotechnol; 2014; 5():2374-82. PubMed ID: 25551065 [TBL] [Abstract][Full Text] [Related]
3. Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates. del Pino AP; György E; Marcus IC; Roqueta J; Alonso MI Nanotechnology; 2011 Jul; 22(29):295304. PubMed ID: 21680960 [TBL] [Abstract][Full Text] [Related]
4. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition. Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775 [TBL] [Abstract][Full Text] [Related]
5. Stranski-Krastanov growth of para-sexiphenyl on Cu(110)-(2×1)O revealed by optical spectroscopy. Sun L; Weidlinger G; Denk M; Denk R; Hohage M; Zeppenfeld P Phys Chem Chem Phys; 2010 Nov; 12(44):14706-9. PubMed ID: 20941450 [TBL] [Abstract][Full Text] [Related]
6. Critical role of a buried interface in the Stranski-Krastanov growth of metallic nanocrystals: quantum size effects in Ag/Si(111)-(7×7). Chen Y; Gramlich MW; Hayden ST; Miceli PF Phys Rev Lett; 2015 Jan; 114(3):035501. PubMed ID: 25659005 [TBL] [Abstract][Full Text] [Related]
8. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition. Zhang Z; Wang RF; Zhang J; Li HS; Zhang J; Qiu F; Yang J; Wang C; Yang Y Nanotechnology; 2016 Jul; 27(30):305601. PubMed ID: 27302495 [TBL] [Abstract][Full Text] [Related]
9. Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density. Bernardi A; Ossó JO; Alonso MI; Goñi AR; Garriga M Nanotechnology; 2006 May; 17(10):2602-8. PubMed ID: 21727511 [TBL] [Abstract][Full Text] [Related]
10. Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001). Yakimov AI; Nikiforov AI; Dvurechenskii AV; Ulyanov VV; Volodin VA; Groetzschel R Nanotechnology; 2006 Sep; 17(18):4743-7. PubMed ID: 21727607 [TBL] [Abstract][Full Text] [Related]
11. Mechanism of growth of the Ge wetting layer upon exposure of Si(100)-2 x 1 to GeH4. Liu CS; Chou LW; Hong LS; Jiang JC J Am Chem Soc; 2008 Apr; 130(16):5440-2. PubMed ID: 18366168 [TBL] [Abstract][Full Text] [Related]
12. Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique. Shu Q; Huang P; Yang F; Yang L; Chen L Sci Rep; 2023 May; 13(1):7511. PubMed ID: 37161032 [TBL] [Abstract][Full Text] [Related]
13. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy. Sales DL; Varela M; Pennycook SJ; Galindo PL; González L; González Y; Fuster D; Molina SI Nanotechnology; 2010 Aug; 21(32):325706. PubMed ID: 20647625 [TBL] [Abstract][Full Text] [Related]
14. Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing. Liao TW; Chen HM; Shen KY; Kuan CH Nanotechnology; 2015 Apr; 26(16):165301. PubMed ID: 25815515 [TBL] [Abstract][Full Text] [Related]
16. Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition. Ma X Nanotechnology; 2008 Jul; 19(27):275706. PubMed ID: 21828718 [TBL] [Abstract][Full Text] [Related]
18. Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001). Bergamaschini R; Brehm M; Grydlik M; Fromherz T; Bauer G; Montalenti F Nanotechnology; 2011 Jul; 22(28):285704. PubMed ID: 21646691 [TBL] [Abstract][Full Text] [Related]
19. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM. Gangopadhyay S; Yoshimura M; Ueda K Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880 [TBL] [Abstract][Full Text] [Related]
20. Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars. Kozlowski G; Zaumseil P; Schubert MA; Yamamoto Y; Bauer J; Schülli TU; Tillack B; Schroeder T Nanotechnology; 2012 Mar; 23(11):115704. PubMed ID: 22369884 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]