These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

176 related articles for article (PubMed ID: 22277096)

  • 21. Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.
    Jevasuwan W; Boonpeng P; Panyakeow S; Ratanathammaphan S
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7291-4. PubMed ID: 21137917
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures.
    Golovynskyi S; Seravalli L; Datsenko O; Trevisi G; Frigeri P; Gombia E; Golovynska I; Kondratenko SV; Qu J; Ohulchanskyy TY
    Nanoscale Res Lett; 2017 Dec; 12(1):335. PubMed ID: 28482647
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Formation of mid-infrared emissive InAs quantum dots on a graded InxGa1-xAs/InP matrix with a more uniform size and higher density under safer growth conditions.
    Yin Z; Tang X; Sentosa D; Zhao J
    Nanotechnology; 2006 Mar; 17(6):1646-50. PubMed ID: 26558572
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Argon-plasma-induced InAs/InGaAs/InP quantum dot intermixing.
    Yin Z; Tang X; Lee CW; Zhao J; Deny S; Chin MK
    Nanotechnology; 2006 Sep; 17(18):4664-7. PubMed ID: 21727594
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.
    Wu BP; Wu DH; Xiong YH; Huang SS; Ni HQ; Xu YQ; Niu ZC
    J Nanosci Nanotechnol; 2009 Feb; 9(2):1333-6. PubMed ID: 19441518
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.
    Shen J; Song Y; Lee ML; Cha JJ
    Nanotechnology; 2014 Nov; 25(46):465702. PubMed ID: 25354930
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.
    Liu WS; Tseng HL; Kuo PC
    Opt Express; 2014 Aug; 22(16):18860-9. PubMed ID: 25320972
    [TBL] [Abstract][Full Text] [Related]  

  • 28. InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.
    Barbot C; Rondeau-Body C; Coinon C; Deblock Y; Tilmant P; Vaurette F; Yarekha D; Berthe M; Thomas L; Diesinger H; Capiod P; Desplanque L; Grandidier B
    Nanotechnology; 2024 Jul; 35(39):. PubMed ID: 38964286
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.
    Park MH; Kim HS; Park SJ; Song JD; Kim SH; Lee YJ; Choi WJ; Park JH
    J Nanosci Nanotechnol; 2014 Apr; 14(4):2955-9. PubMed ID: 24734716
    [TBL] [Abstract][Full Text] [Related]  

  • 30. First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth.
    Yin Z; Tang X; Zhang J; Deny S; Teng J; Du A; Chin MK
    Nanotechnology; 2008 Feb; 19(8):085603. PubMed ID: 21730727
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.
    Wang L; Li M; Xiong M; Wang W; Gao H; Zhao L
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7359-61. PubMed ID: 21137934
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers.
    Motyka M; Sęk G; Ryczko K; Dyksik M; Weih R; Patriarche G; Misiewicz J; Kamp M; Höfling S
    Nanoscale Res Lett; 2015 Dec; 10(1):471. PubMed ID: 26643652
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography.
    Holewa P; Jasiński J; Shikin A; Lebedkina E; Maryński A; Syperek M; Semenova E
    Materials (Basel); 2021 Jan; 14(2):. PubMed ID: 33466881
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot - quantum well structures.
    Rudno-Rudziński W; Syperek M; Andrzejewski J; Rogowicz E; Eisenstein G; Bauer S; Sichkovskyi VI; Reithmaier JP; Sęk G
    Sci Rep; 2018 Aug; 8(1):12317. PubMed ID: 30120329
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy.
    Smołka T; Posmyk K; Wasiluk M; Wyborski P; Gawełczyk M; Mrowiński P; Mikulicz M; Zielińska A; Reithmaier JP; Musiał A; Benyoucef M
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771794
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping.
    Desplanque L; Coinon C; Troadec D; Ruterana P; Patriarche G; Bonato L; Bimberg D; Wallart X
    Nanotechnology; 2017 Jun; 28(22):225601. PubMed ID: 28480873
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy.
    Benyahia D; Kubiszyn Ł; Michalczewski K; Boguski J; Kębłowski A; Martyniuk P; Piotrowski J; Rogalski A
    Nanoscale Res Lett; 2018 Jul; 13(1):196. PubMed ID: 29978267
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate.
    Azeza B; Hadj Alouane MH; Ilahi B; Patriarche G; Sfaxi L; Fouzri A; Maaref H; M'ghaieth R
    Materials (Basel); 2015 Jul; 8(7):4544-4552. PubMed ID: 28793455
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
    Souaf M; Baira M; Nasr O; Alouane MHH; Maaref H; Sfaxi L; Ilahi B
    Materials (Basel); 2015 Jul; 8(8):4699-4709. PubMed ID: 28793465
    [TBL] [Abstract][Full Text] [Related]  

  • 40. E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.
    Liang W; Wei W; Han D; Ming M; Zhang J; Wang Z; Zhang X; Wang T; Zhang J
    Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673273
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.