172 related articles for article (PubMed ID: 22348545)
1. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.
Xu P; Jiang Y; Chen Y; Ma Z; Wang X; Deng Z; Li Y; Jia H; Wang W; Chen H
Nanoscale Res Lett; 2012 Feb; 7(1):141. PubMed ID: 22348545
[TBL] [Abstract][Full Text] [Related]
2. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
[TBL] [Abstract][Full Text] [Related]
3. Substrate effects on the strain relaxation in GaN/AlN short-period superlattices.
Kladko V; Kuchuk A; Lytvyn P; Yefanov O; Safriuk N; Belyaev A; Mazur YI; Decuir EA; Ware ME; Salamo GJ
Nanoscale Res Lett; 2012 Jun; 7(1):289. PubMed ID: 22672771
[TBL] [Abstract][Full Text] [Related]
4. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
[TBL] [Abstract][Full Text] [Related]
5. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Lee HP; Perozek J; Rosario LD; Bayram C
Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
[TBL] [Abstract][Full Text] [Related]
6. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
Liu AC; Huang YW; Chen HC; Kuo HC
Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675328
[TBL] [Abstract][Full Text] [Related]
7. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.
Liu XY; Zhao SX; Zhang LQ; Huang HF; Shi JS; Zhang CM; Lu HL; Wang PF; Zhang DW
Nanoscale Res Lett; 2015; 10():109. PubMed ID: 25852404
[TBL] [Abstract][Full Text] [Related]
8. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
Baek SH; Lee GW; Cho CY; Lee SN
Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
[TBL] [Abstract][Full Text] [Related]
9. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.
Zhao SX; Liu XY; Zhang LQ; Huang HF; Shi JS; Wang PF
Nanoscale Res Lett; 2016 Dec; 11(1):137. PubMed ID: 26964559
[TBL] [Abstract][Full Text] [Related]
10. Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis,
Davydov V; Roginskii E; Kitaev Y; Smirnov A; Eliseyev I; Nechaev D; Jmerik V; Smirnov M
Nanomaterials (Basel); 2021 Jan; 11(2):. PubMed ID: 33499097
[TBL] [Abstract][Full Text] [Related]
11. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.
Liao SY; Lu CC; Chang T; Huang CF; Cheng CH; Chang LB
J Nanosci Nanotechnol; 2014 Aug; 14(8):6243-6. PubMed ID: 25936096
[TBL] [Abstract][Full Text] [Related]
12. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
13. Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by
Siddique A; Ahmed R; Anderson J; Holtz M; Piner EL
ACS Appl Mater Interfaces; 2021 Apr; 13(15):18264-18273. PubMed ID: 33823581
[No Abstract] [Full Text] [Related]
14. Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect.
Chen X; Dong J; He C; He L; Chen Z; Li S; Zhang K; Wang X; Wang ZL
Nanomicro Lett; 2021 Feb; 13(1):67. PubMed ID: 34138301
[TBL] [Abstract][Full Text] [Related]
15. GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors.
Jha J; Ganguly S; Saha D
Nanotechnology; 2021 May; 32(31):. PubMed ID: 33902018
[TBL] [Abstract][Full Text] [Related]
16. Improving Performance of Al
Sun M; Wang L; Zhang P; Chen K
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374685
[TBL] [Abstract][Full Text] [Related]
17. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
[TBL] [Abstract][Full Text] [Related]
18. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Abid I; Kabouche R; Bougerol C; Pernot J; Masante C; Comyn R; Cordier Y; Medjdoub F
Micromachines (Basel); 2019 Oct; 10(10):. PubMed ID: 31614745
[TBL] [Abstract][Full Text] [Related]
19. Polarization properties in grating-gated AlN/GaN HEMTs at mid-infrared frequencies.
Cai M; Liu H; Wang S; Wang Y; Wang D; Zhao D; Guo W
Opt Express; 2022 Apr; 30(9):14748-14758. PubMed ID: 35473212
[TBL] [Abstract][Full Text] [Related]
20. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.
Jung JH; Yoon YJ; Cho MS; Kim BG; Jang WD; Kang IM
J Nanosci Nanotechnol; 2019 Oct; 19(10):6008-6015. PubMed ID: 31026900
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]