These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

185 related articles for article (PubMed ID: 22352388)

  • 21. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions.
    Elliot AJ; Malek GA; Lu R; Han S; Yu H; Zhao S; Wu JZ
    Rev Sci Instrum; 2014 Jul; 85(7):073904. PubMed ID: 25085149
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.
    Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM
    ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS
    Price KM; Schauble KE; McGuire FA; Farmer DB; Franklin AD
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):23072-23080. PubMed ID: 28653822
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Effect of Al
    Acharya J; Goul R; Romine D; Sakidja R; Wu J
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30368-30375. PubMed ID: 31356739
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology.
    Kam KA; Tengan BIC; Hayashi CK; Ordonez RC; Garmire DG
    Sensors (Basel); 2018 Aug; 18(9):. PubMed ID: 30142949
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Vertically architectured stack of multiple graphene field-effect transistors for flexible electronics.
    Meng J; Chen JJ; Zhang L; Bie YQ; Liao ZM; Yu DP
    Small; 2015 Apr; 11(14):1660-4. PubMed ID: 25400205
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al
    Snure M; Vangala SR; Prusnick T; Grzybowski G; Crespo A; Leedy KD
    Sci Rep; 2020 Sep; 10(1):14699. PubMed ID: 32895395
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Damage evaluation in graphene underlying atomic layer deposition dielectrics.
    Tang X; Reckinger N; Poncelet O; Louette P; Ureña F; Idrissi H; Turner S; Cabosart D; Colomer JF; Raskin JP; Hackens B; Francis LA
    Sci Rep; 2015 Aug; 5():13523. PubMed ID: 26311131
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Boron nitride film as a buffer layer in deposition of dielectrics on graphene.
    Han Q; Yan B; Gao T; Meng J; Zhang Y; Liu Z; Wu X; Yu D
    Small; 2014 Jun; 10(11):2293-9. PubMed ID: 24599538
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.
    Münch S; Reitzenstein S; Borgström M; Thelander C; Samuelson L; Worschech L; Forchel A
    Nanotechnology; 2010 Mar; 21(10):105711. PubMed ID: 20157234
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Probing the Dielectric Properties of Ultrathin Al/Al
    Acharya J; Wilt J; Liu B; Wu J
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):3112-3120. PubMed ID: 29293311
    [TBL] [Abstract][Full Text] [Related]  

  • 32. n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors.
    Hui YY; Tai G; Sun Z; Xu Z; Wang N; Yan F; Lau SP
    Nanoscale; 2012 May; 4(10):3118-22. PubMed ID: 22504661
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.
    Yu C; Liu H; Ni W; Gao N; Zhao J; Zhang H
    Phys Chem Chem Phys; 2011 Feb; 13(8):3461-7. PubMed ID: 21240394
    [TBL] [Abstract][Full Text] [Related]  

  • 34. In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).
    Rose M; Niinistö J; Endler I; Bartha JW; Kücher P; Ritala M
    ACS Appl Mater Interfaces; 2010 Feb; 2(2):347-50. PubMed ID: 20356179
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Versatile sputtering technology for Al
    Friedemann M; Woszczyna M; Müller A; Wundrack S; Dziomba T; Weimann T; Ahlers FJ
    Sci Technol Adv Mater; 2012 Apr; 13(2):025007. PubMed ID: 27877485
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Atomic layer deposition on gram quantities of multi-walled carbon nanotubes.
    Cavanagh AS; Wilson CA; Weimer AW; George SM
    Nanotechnology; 2009 Jun; 20(25):255602. PubMed ID: 19491468
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores.
    Pardon G; Gatty HK; Stemme G; van der Wijngaart W; Roxhed N
    Nanotechnology; 2013 Jan; 24(1):015602. PubMed ID: 23221022
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.
    Jeong SJ; Gu Y; Heo J; Yang J; Lee CS; Lee MH; Lee Y; Kim H; Park S; Hwang S
    Sci Rep; 2016 Feb; 6():20907. PubMed ID: 26861833
    [TBL] [Abstract][Full Text] [Related]  

  • 39. High-performance low-voltage organic field-effect transistors prepared on electro-polished aluminum wires.
    Nam S; Jang J; Park JJ; Kim SW; Park CE; Kim JM
    ACS Appl Mater Interfaces; 2012 Jan; 4(1):6-10. PubMed ID: 22175700
    [TBL] [Abstract][Full Text] [Related]  

  • 40. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ
    J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.