137 related articles for article (PubMed ID: 22400311)
1. Ellipsometric and Rutherford Back scattering Spectrometry studies of SiO(X)N(Y) films elaborated by plasma-enhanced chemical vapour deposition technique.
Mahamdi R; Boulesbaa M; Saci L; Mansour F; Molliet C; Collet M; Temple-Boyer P
J Nanosci Nanotechnol; 2011 Oct; 11(10):9118-22. PubMed ID: 22400311
[TBL] [Abstract][Full Text] [Related]
2. PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications.
Sharma SK; Barthwal S; Singh V; Kumar A; Dwivedi PK; Prasad B; Kumar D
Micron; 2013 Jan; 44():339-46. PubMed ID: 23092929
[TBL] [Abstract][Full Text] [Related]
3. Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.
Parkhomenko I; Vlasukova L; Komarov F; Kovalchuk N; Demidovich S; Zhussupbekova A; Zhussupbekov K; Shvets IV; Milchanin O; Zhigulin D; Romanov I
ACS Omega; 2023 Aug; 8(33):30768-30775. PubMed ID: 37636914
[TBL] [Abstract][Full Text] [Related]
4. Structural and emission properties of Tb
Labbé C; An YT; Zatryb G; Portier X; Podhorodecki A; Marie P; Frilay C; Cardin J; Gourbilleau F
Nanotechnology; 2017 Mar; 28(11):115710. PubMed ID: 28140358
[TBL] [Abstract][Full Text] [Related]
5. Role of trimethylboron to silane ratio on the properties of p-type nanocrystalline silicon thin film deposited by radio frequency plasma enhanced chemical vapour deposition.
Aguas H; Filonovich SA; Bernacka-Wojcik I; Fortunato E; Martins R
J Nanosci Nanotechnol; 2010 Apr; 10(4):2547-51. PubMed ID: 20355460
[TBL] [Abstract][Full Text] [Related]
6. Electrical and Optical Properties of Si-Incorporated a-C:H Films via the Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Method.
Kim IJ; Choi WS; Hong B
J Nanosci Nanotechnol; 2016 May; 16(5):5394-7. PubMed ID: 27483937
[TBL] [Abstract][Full Text] [Related]
7. Systematic Study of the SiO
Ma HP; Yang JH; Yang JG; Zhu LY; Huang W; Yuan GJ; Feng JJ; Jen TC; Lu HL
Nanomaterials (Basel); 2019 Jan; 9(1):. PubMed ID: 30609822
[TBL] [Abstract][Full Text] [Related]
8. Hydrogen dependent surface morphology study of plasma deposited SiN(x):H films for two gas systems SiH4/NH3 and SiH4/N2.
Chopra S; Gupta RP; Banerjee S
J Nanosci Nanotechnol; 2011 Dec; 11(12):11216-21. PubMed ID: 22409088
[TBL] [Abstract][Full Text] [Related]
9. Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.
Kim HS; Meng X; Kim SJ; Lucero AT; Cheng L; Byun YC; Lee JS; Hwang SM; Kondusamy ALN; Wallace RM; Goodman G; Wan AS; Telgenhoff M; Hwang BK; Kim J
ACS Appl Mater Interfaces; 2018 Dec; 10(51):44825-44833. PubMed ID: 30485061
[TBL] [Abstract][Full Text] [Related]
10. Preparation and characterization of thin films of SiO(x) on gold substrates for surface plasmon resonance studies.
Szunerits S; Boukherroub R
Langmuir; 2006 Feb; 22(4):1660-3. PubMed ID: 16460088
[TBL] [Abstract][Full Text] [Related]
11. Infrared interference coating by use of Si3N4 and SiO2 films with ion-assisted deposition.
Lee CC; Ku SL
Appl Opt; 2010 Jan; 49(3):437-41. PubMed ID: 20090808
[TBL] [Abstract][Full Text] [Related]
12. Investigation of structural disorder using electron temperature in VHF-PECVD on hydrogenated amorphous silicon films for thin film solar cell applications.
Shin C; Park J; Kim S; Jang J; Jung J; Lee YJ; Yi J
J Nanosci Nanotechnol; 2014 Oct; 14(10):8110-6. PubMed ID: 25942934
[TBL] [Abstract][Full Text] [Related]
13. Role of Hydrogen and Nitrogen on the Surface Chemical Structure of Bioactive Amorphous Silicon Oxynitride Films.
Varanasi VG; Ilyas A; Velten MF; Shah A; Lanford WA; Aswath PB
J Phys Chem B; 2017 Sep; 121(38):8991-9005. PubMed ID: 28825836
[TBL] [Abstract][Full Text] [Related]
14. Characteristics of room temperature silicon nitride deposited by internal inductively coupled plasma chemical vapor deposition.
Kang S; Lee HW; Hong MP; Kwon KH
J Nanosci Nanotechnol; 2014 Aug; 14(8):6189-95. PubMed ID: 25936085
[TBL] [Abstract][Full Text] [Related]
15. High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature.
Park KW; Lee S; Lee H; Cho YH; Park YC; Im SG; Ko Park SH
RSC Adv; 2018 Dec; 9(1):58-64. PubMed ID: 35521588
[TBL] [Abstract][Full Text] [Related]
16. Measurements of the refractive indices and thermo-optic coefficients of Si3N4 and SiO(x) using microring resonances.
Arbabi A; Goddard LL
Opt Lett; 2013 Oct; 38(19):3878-81. PubMed ID: 24081076
[TBL] [Abstract][Full Text] [Related]
17. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.
Chung YB; Park HK; Lee SH; Song JH; Hwang NM
J Nanosci Nanotechnol; 2011 Sep; 11(9):8242-5. PubMed ID: 22097562
[TBL] [Abstract][Full Text] [Related]
18. Photoluminescence of silicon nanocrystals embedded in silicon oxide.
Wong CK; Wong H; Filip V
J Nanosci Nanotechnol; 2009 Feb; 9(2):1272-6. PubMed ID: 19441504
[TBL] [Abstract][Full Text] [Related]
19. Atomic vapor deposition approach to In2O3 thin films.
Hellwig M; Parala H; Cybinksa J; Barreca D; Gasparotto A; Niermann B; Becker HW; Rogalla D; Feydt J; Irsen S; Mudring AV; Winter J; Fischer RA; Devi A
J Nanosci Nanotechnol; 2011 Sep; 11(9):8094-100. PubMed ID: 22097536
[TBL] [Abstract][Full Text] [Related]
20. High pressure growth of nanocrystalline silicon films.
Kumar S; Gope J; Kumar A; Parashar A; Rauthan CM; Dixit PN
J Nanosci Nanotechnol; 2008 Aug; 8(8):4211-7. PubMed ID: 19049205
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
