These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
22. Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. Abdullah QN; Yam FK; Hassan Z; Bououdina M J Colloid Interface Sci; 2015 Dec; 460():135-45. PubMed ID: 26319330 [TBL] [Abstract][Full Text] [Related]
23. Diamond/GaN HEMTs: Where from and Where to? Mendes JC; Liehr M; Li C Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057131 [TBL] [Abstract][Full Text] [Related]
29. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. Huang YC; Chiu HC; Kao HL; Wang HC; Liu CH; Huang CR; Chen SW Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34062908 [TBL] [Abstract][Full Text] [Related]
30. Gas Sensor by Direct Growth and Functionalization of Metal Oxide/Metal Sulfide Core-Shell Nanowires on Flexible Substrates. Yang D; Cho I; Kim D; Lim MA; Li Z; Ok JG; Lee M; Park I ACS Appl Mater Interfaces; 2019 Jul; 11(27):24298-24307. PubMed ID: 31187618 [TBL] [Abstract][Full Text] [Related]
31. Zinc Oxide Nanostructures for NO Kumar R; Al-Dossary O; Kumar G; Umar A Nanomicro Lett; 2015; 7(2):97-120. PubMed ID: 30464961 [TBL] [Abstract][Full Text] [Related]
32. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs. Guo H; Chen T; Shi S Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936651 [TBL] [Abstract][Full Text] [Related]
33. Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices. Cheng Z; Mu F; Yates L; Suga T; Graham S ACS Appl Mater Interfaces; 2020 Feb; 12(7):8376-8384. PubMed ID: 31986013 [TBL] [Abstract][Full Text] [Related]
34. Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO₂, SO₂ and H₂S. Khan MAH; Rao MV; Li Q Sensors (Basel); 2019 Feb; 19(4):. PubMed ID: 30795591 [TBL] [Abstract][Full Text] [Related]
35. GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors. Jha J; Ganguly S; Saha D Nanotechnology; 2021 May; 32(31):. PubMed ID: 33902018 [TBL] [Abstract][Full Text] [Related]
36. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Niu D; Wang Q; Li W; Chen C; Xu J; Jiang L; Feng C; Xiao H; Wang Q; Xu X; Wang X Micromachines (Basel); 2021 Jan; 12(2):. PubMed ID: 33530451 [TBL] [Abstract][Full Text] [Related]
37. Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application. Chang YC; Ho YL; Huang TY; Huang DW; Wu CH Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33919816 [TBL] [Abstract][Full Text] [Related]
38. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy. Bagnall KR; Moore EA; Badescu SC; Zhang L; Wang EN Rev Sci Instrum; 2017 Nov; 88(11):113111. PubMed ID: 29195348 [TBL] [Abstract][Full Text] [Related]
39. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study. Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083 [TBL] [Abstract][Full Text] [Related]
40. Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme. Ma CT; Gu ZH Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33924185 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]