161 related articles for article (PubMed ID: 22408919)
1. Study of carbon nanotube field effect transistors performance based on changes in gate parameters.
Shirazi SG; Mirzakuchaki S
J Nanosci Nanotechnol; 2011 Dec; 11(12):10424-8. PubMed ID: 22408919
[TBL] [Abstract][Full Text] [Related]
2. A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay.
Svensson J; Tarakanov Y; Lee DS; Kinaret JM; Park YW; Campbell EE
Nanotechnology; 2008 Aug; 19(32):325201. PubMed ID: 21828807
[TBL] [Abstract][Full Text] [Related]
3. Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices.
Kimbrough J; Williams L; Yuan Q; Xiao Z
Micromachines (Basel); 2020 Dec; 12(1):. PubMed ID: 33375602
[TBL] [Abstract][Full Text] [Related]
4. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.
Tan ML; Lentaris G; Amaratunga Aj G
Nanoscale Res Lett; 2012 Aug; 7(1):467. PubMed ID: 22901374
[TBL] [Abstract][Full Text] [Related]
5. Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices.
Moorthy VM; Venkatesan R; Srivastava VM
Recent Pat Nanotechnol; 2023 Sep; ():. PubMed ID: 37904555
[TBL] [Abstract][Full Text] [Related]
6. Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.
Ding L; Wang Z; Pei T; Zhang Z; Wang S; Xu H; Peng F; Li Y; Peng LM
ACS Nano; 2011 Apr; 5(4):2512-9. PubMed ID: 21370813
[TBL] [Abstract][Full Text] [Related]
7. Short-channel transistors constructed with solution-processed carbon nanotubes.
Choi SJ; Bennett P; Takei K; Wang C; Lo CC; Javey A; Bokor J
ACS Nano; 2013 Jan; 7(1):798-803. PubMed ID: 23259742
[TBL] [Abstract][Full Text] [Related]
8. Origins and characteristics of the threshold voltage variability of quasiballistic single-walled carbon nanotube field-effect transistors.
Cao Q; Han SJ; Penumatcha AV; Frank MM; Tulevski GS; Tersoff J; Haensch WE
ACS Nano; 2015 Feb; 9(2):1936-44. PubMed ID: 25652208
[TBL] [Abstract][Full Text] [Related]
9. Field-modulated carrier transport in carbon nanotube transistors.
Appenzeller J; Knoch J; Derycke V; Martel R; Wind S; Avouris P
Phys Rev Lett; 2002 Sep; 89(12):126801. PubMed ID: 12225112
[TBL] [Abstract][Full Text] [Related]
10. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.
Javey A; Kim H; Brink M; Wang Q; Ural A; Guo J; McIntyre P; McEuen P; Lundstrom M; Dai H
Nat Mater; 2002 Dec; 1(4):241-6. PubMed ID: 12618786
[TBL] [Abstract][Full Text] [Related]
11. Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics.
Tamersit K; Kouzou A; Rodriguez J; Abdelrahem M
Nanomaterials (Basel); 2024 Jun; 14(11):. PubMed ID: 38869587
[TBL] [Abstract][Full Text] [Related]
12. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.
Qiu C; Zhang Z; Zhong D; Si J; Yang Y; Peng LM
ACS Nano; 2015 Jan; 9(1):969-77. PubMed ID: 25545108
[TBL] [Abstract][Full Text] [Related]
13. Gate Quantum Capacitance Effects in Nanoscale Transistors.
Desai SB; Fahad HM; Lundberg T; Pitner G; Kim H; Chrzan D; Wong HP; Javey A
Nano Lett; 2019 Oct; 19(10):7130-7137. PubMed ID: 31532995
[TBL] [Abstract][Full Text] [Related]
14. Intense pH Sensitivity Modulation in Carbon Nanotube-Based Field-Effect Transistor by Non-Covalent Polyfluorene Functionalization.
Cho G; Grinenval E; Gabriel JP; Lebental B
Nanomaterials (Basel); 2023 Mar; 13(7):. PubMed ID: 37049251
[TBL] [Abstract][Full Text] [Related]
15. Core Insulator Nanosheet Transistor and Structure Optimization to Improve Gate Electrostatic Characteristics.
Joung S; Kim S
J Nanosci Nanotechnol; 2020 Aug; 20(8):4690-4698. PubMed ID: 32126642
[TBL] [Abstract][Full Text] [Related]
16. Solution-processable low-voltage carbon nanotube field-effect transistors with high-
Yang D; Moon Y; Han N; Lee M; Beak J; Lee SH; Kim DY
Nanotechnology; 2024 May; 35(29):. PubMed ID: 38608317
[TBL] [Abstract][Full Text] [Related]
17. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.
Chakraborty G; Sarkar CK; Lu XB; Dai JY
Nanotechnology; 2008 Jun; 19(25):255401. PubMed ID: 21828650
[TBL] [Abstract][Full Text] [Related]
18. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.
Lee W; Su P
Nanotechnology; 2009 Feb; 20(6):065202. PubMed ID: 19417374
[TBL] [Abstract][Full Text] [Related]
19. Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.
Pitner G; Hills G; Llinas JP; Persson KM; Park R; Bokor J; Mitra S; Wong HP
Nano Lett; 2019 Feb; 19(2):1083-1089. PubMed ID: 30677297
[TBL] [Abstract][Full Text] [Related]
20. Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface.
Lee SH; Xu Y; Khim D; Park WT; Kim DY; Noh YY
ACS Appl Mater Interfaces; 2016 Nov; 8(47):32421-32431. PubMed ID: 27933829
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]