These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

80 related articles for article (PubMed ID: 22408932)

  • 1. Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy.
    Jung W; Zaremba G; Engström O; Kaniewska M
    J Nanosci Nanotechnol; 2011 Dec; 11(12):10489-92. PubMed ID: 22408932
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Low Temperature Photoluminescence Kinetics of Double-Ring Structured GaAs Quantum Dots.
    Myoung S; Mun OM; Yim SY; Kim JS
    J Nanosci Nanotechnol; 2015 Nov; 15(11):8684-7. PubMed ID: 26726575
    [TBL] [Abstract][Full Text] [Related]  

  • 3. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.
    Bru-Chevallier C; El Akra A; Pelloux-Gervais D; Dumont H; Canut B; Chauvin N; Regreny P; Gendry M; Patriarche G; Jancu JM; Even J; Noe P; Calvo V; Salem B
    J Nanosci Nanotechnol; 2011 Oct; 11(10):9153-9. PubMed ID: 22400316
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.
    Wang L; Li M; Xiong M; Wang W; Gao H; Zhao L
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7359-61. PubMed ID: 21137934
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots.
    Izhnin II; Fitsych OI; Pishchagin AA; Kokhanenko AP; Voitsekhovskii AV; Dzyadukh SM; Nikiforov AI
    Nanoscale Res Lett; 2017 Dec; 12(1):131. PubMed ID: 28235368
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.
    Morales-Cortés H; Mejía-García C; Méndez-García VH; Vázquez-Cortés D; Rojas-Ramírez JS; Contreras-Guerrero R; Ramírez-López M; Martínez-Velis I; López-López M
    Nanotechnology; 2010 Apr; 21(13):134012. PubMed ID: 20208110
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Influence of the Quantum Well Structure and Growth Temperature on a Five-Layer InGaMnAs Quantum Well with an InGaAs Buffer Layer.
    Yoon IT; Lee S; Roshchupkin DV; Panin GN
    J Nanosci Nanotechnol; 2018 Jun; 18(6):4355-4359. PubMed ID: 29442787
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.
    Izhnin II; Nesmelov SN; Dzyadukh SM; Voitsekhovskii AV; Gorn DI; Dvoretsky SA; Mikhailov NN
    Nanoscale Res Lett; 2016 Dec; 11(1):53. PubMed ID: 26831691
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.
    Hazdra P; Oswald J; Komarnitskyy V; Kuldová K; Hospodková A; Hulicius E; Pangrác J
    J Nanosci Nanotechnol; 2011 Aug; 11(8):6804-9. PubMed ID: 22103083
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.
    Wong PS; Liang BL; Dorogan VG; Albrecht AR; Tatebayashi J; He X; Nuntawong N; Mazur YI; Salamo GJ; Brueck SR; Huffaker DL
    Nanotechnology; 2008 Oct; 19(43):435710. PubMed ID: 21832714
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy.
    Kwak DW; Park CJ; Lee YH; Kim WS; Cho HY
    Nanotechnology; 2009 Feb; 20(5):055201. PubMed ID: 19417338
    [TBL] [Abstract][Full Text] [Related]  

  • 12. MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device.
    Manna S; Aluguri R; Katiyar A; Das S; Laha A; Osten HJ; Ray SK
    Nanotechnology; 2013 Dec; 24(50):505709. PubMed ID: 24284782
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G; Seravalli L; Frigeri P; Franchi S
    Nanotechnology; 2009 Oct; 20(41):415607. PubMed ID: 19762951
    [TBL] [Abstract][Full Text] [Related]  

  • 14. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.
    He J; Yadavalli K; Zhao Z; Li N; Hao Z; Wang KL; Jacob AP
    Nanotechnology; 2008 Nov; 19(45):455607. PubMed ID: 21832784
    [TBL] [Abstract][Full Text] [Related]  

  • 15. InAs quantum dot arrays decorating the facets of GaAs nanowires.
    Uccelli E; Arbiol J; Morante JR; Fontcuberta i Morral A
    ACS Nano; 2010 Oct; 4(10):5985-93. PubMed ID: 20839804
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Capacitance transient analysis of different-sized InAs/GaAs quantum dot structures.
    Song H; Kim JS; Kim EK; Lee SJ; Noh SK
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6504-9. PubMed ID: 22121745
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique.
    Al Saqri NA; Felix JF; Aziz M; Kunets VP; Jameel D; Taylor D; Henini M; Abd El-Sadek MS; Furrow C; Ware ME; Benamara M; Mortazavi M; Salamo G
    Nanotechnology; 2017 Jan; 28(4):045707. PubMed ID: 27997370
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures.
    Kondratenko SV; Iliash SA; Mazur YI; Kunets VP; Benamara M; Salamo GJ
    Nanotechnology; 2017 Sep; 28(37):375201. PubMed ID: 28714860
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures.
    Mamutin VV; Egorov AY; Kryzhanovskaya NV
    Nanotechnology; 2008 Nov; 19(44):445715. PubMed ID: 21832756
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.
    Lee EH; Song JD; Kim SY; Han IK; Chang SK; Lee JI
    J Nanosci Nanotechnol; 2012 Feb; 12(2):1480-2. PubMed ID: 22629983
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 4.