These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

122 related articles for article (PubMed ID: 22413217)

  • 1. Conduction and valence band discontinuities in some new semiconductor heterojunctions.
    Zhu Q; Wu J; Li C; Wang Z
    J Nanosci Nanotechnol; 2011 Nov; 11(11):9368-83. PubMed ID: 22413217
    [TBL] [Abstract][Full Text] [Related]  

  • 2. The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy--A chemical inert interface with significant band discontinuities.
    Zhang Y; Lin N; Li Y; Wang X; Wang H; Kang J; Wilks R; Bär M; Mu R
    Sci Rep; 2016 Mar; 6():23106. PubMed ID: 26976240
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
    Shi K; Li DB; Song HP; Guo Y; Wang J; Xu XQ; Liu JM; Yang AL; Wei HY; Zhang B; Yang SY; Liu XL; Zhu QS; Wang ZG
    Nanoscale Res Lett; 2011 Dec; 6(1):50. PubMed ID: 27502672
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.
    Liu J; Liu X; Xu X; Wang J; Li C; Wei H; Yang S; Zhu Q; Fan Y; Zhang X; Wang Z
    Nanoscale Res Lett; 2010 Jun; 5(8):1340-3. PubMed ID: 20676206
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.
    Li Z; Zhang B; Wang J; Liu J; Liu X; Yang S; Zhu Q; Wang Z
    Nanoscale Res Lett; 2011 Mar; 6(1):193. PubMed ID: 21711731
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.
    Jia C; Chen Y; Guo Y; Liu X; Yang S; Zhang W; Wang Z
    Nanoscale Res Lett; 2011 Apr; 6(1):316. PubMed ID: 21711842
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga
    Sun SM; Liu WJ; Xiao YF; Huan YW; Liu H; Ding SJ; Zhang DW
    Nanoscale Res Lett; 2018 Dec; 13(1):412. PubMed ID: 30584649
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Band Offsets at κ-([Al,In]
    Schultz T; Kneiß M; Storm P; Splith D; von Wenckstern H; Grundmann M; Koch N
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8879-8885. PubMed ID: 31977187
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method.
    Fang DQ; Zhang SL
    J Chem Phys; 2016 Jan; 144(1):014704. PubMed ID: 26747815
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Surface passivated and encapsulated ZnO atomic layers by high-κ ultrathin MgO layers.
    Ekuma CE; Najmaei S; Dubey M
    Nanoscale; 2019 Jul; 11(26):12502-12506. PubMed ID: 31241644
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Mg composition dependent band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions.
    Zhang HH; Pan XH; Lu B; Huang JY; Ding P; Chen W; He HP; Lu JG; Chen SS; Ye ZZ
    Phys Chem Chem Phys; 2013 Jul; 15(27):11231-5. PubMed ID: 23744185
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.
    Sang L; Zhu QS; Yang SY; Liu GP; Li HJ; Wei HY; Jiao CM; Liu SM; Wang ZG; Zhou XW; Mao W; Hao Y; Shen B
    Nanoscale Res Lett; 2014; 9(1):470. PubMed ID: 25258600
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Effect of Band Bending in Photoactive MOF-Based Heterojunctions.
    Schukraft GEM; Moss B; Kafizas AG; Petit C
    ACS Appl Mater Interfaces; 2022 May; 14(17):19342-19352. PubMed ID: 35442614
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Investigation of energy band at atomic layer deposited AZO/β-Ga
    Sun SM; Liu WJ; Golosov DA; Gu CJ; Ding SJ
    Nanoscale Res Lett; 2019 Aug; 14(1):275. PubMed ID: 31414235
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface.
    Lewandków R; Mazur P; Trembułowicz A; Sabik A; Wasielewski R; Grodzicki M
    Materials (Basel); 2021 Jul; 14(15):. PubMed ID: 34361382
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Nanostructured SnO2-ZnO heterojunction photocatalysts showing enhanced photocatalytic activity for the degradation of organic dyes.
    Uddin MT; Nicolas Y; Olivier C; Toupance T; Servant L; Müller MM; Kleebe HJ; Ziegler J; Jaegermann W
    Inorg Chem; 2012 Jul; 51(14):7764-73. PubMed ID: 22734686
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition.
    Liu JS; Clavel M; Hudait MK
    ACS Appl Mater Interfaces; 2015 Dec; 7(51):28624-31. PubMed ID: 26642121
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Band Offset Measurements in Atomic-Layer-Deposited Al
    Yan B; Liu S; Heng Y; Yang Y; Yu Y; Wen K
    Nanoscale Res Lett; 2017 Dec; 12(1):363. PubMed ID: 28532128
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Band Alignment Engineering at Cu2O/ZnO Heterointerfaces.
    Siol S; Hellmann JC; Tilley SD; Graetzel M; Morasch J; Deuermeier J; Jaegermann W; Klein A
    ACS Appl Mater Interfaces; 2016 Aug; 8(33):21824-31. PubMed ID: 27452037
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC.
    Dietmueller R; Nesswetter H; Schoell SJ; Sharp ID; Stutzmann M
    ACS Appl Mater Interfaces; 2011 Nov; 3(11):4286-91. PubMed ID: 21936559
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.