These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

255 related articles for article (PubMed ID: 22418376)

  • 21. Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
    Wang XH; Fu WY; Lai PT; Choi HW
    Opt Express; 2009 Dec; 17(25):22311-9. PubMed ID: 20052154
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
    Park YJ; Kim HY; Ryu JH; Kim HK; Kang JH; Han N; Han M; Jeong H; Jeong MS; Hong CH
    Opt Express; 2011 Jan; 19(3):2029-36. PubMed ID: 21369019
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
    Jia C; Yu T; Lu H; Zhong C; Sun Y; Tong Y; Zhang G
    Opt Express; 2013 Apr; 21(7):8444-9. PubMed ID: 23571934
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.
    Son JH; Lee JL
    Opt Express; 2010 Mar; 18(6):5466-71. PubMed ID: 20389563
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.
    Hong SH; Cho CY; Lee SJ; Yim SY; Lim W; Kim ST; Park SJ
    Opt Express; 2013 Feb; 21(3):3138-44. PubMed ID: 23481772
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.
    Yum WS; Jeon JW; Sung JS; Seong TY
    Opt Express; 2012 Aug; 20(17):19194-9. PubMed ID: 23038560
    [TBL] [Abstract][Full Text] [Related]  

  • 27. GaN light emitting diodes with wing-type imbedded contacts.
    Horng RH; Shen KC; Kuo YW; Wuu DS
    Opt Express; 2013 Jan; 21 Suppl 1():A1-6. PubMed ID: 23389261
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.
    Dang S; Li C; Jia W; Zhang Z; Li T; Han P; Xu B
    Opt Express; 2012 Oct; 20(21):23290-9. PubMed ID: 23188292
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Enhancement of photoluminescence intensity of GaN-based light-emitting diodes with coated polystyrene/silica core-shell nanostructures.
    Yeon S; Park J
    J Nanosci Nanotechnol; 2013 Nov; 13(11):7653-7. PubMed ID: 24245309
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
    Zhao Y; Yan Q; Feezell D; Fujito K; Van de Walle CG; Speck JS; DenBaars SP; Nakamura S
    Opt Express; 2013 Jan; 21 Suppl 1():A53-9. PubMed ID: 23389275
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.
    Ee YK; Kumnorkaew P; Arif RA; Tong H; Gilchrist JF; Tansu N
    Opt Express; 2009 Aug; 17(16):13747-57. PubMed ID: 19654782
    [TBL] [Abstract][Full Text] [Related]  

  • 32. White thin-film flip-chip LEDs with uniform color temperature using laser lift-off and conformal phosphor coating technologies.
    Lin HT; Tien CH; Hsu CP; Horng RH
    Opt Express; 2014 Dec; 22(26):31646-53. PubMed ID: 25607135
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
    Seo YG; Baik KH; Song H; Son JS; Oh K; Hwang SM
    Opt Express; 2011 Jul; 19(14):12919-24. PubMed ID: 21747444
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.
    Yu ZG; Zhao LX; Wei XC; Sun XJ; An PB; Zhu SC; Liu L; Tian LX; Zhang F; Lu HX; Wang JX; Zeng YP; Li JM
    Opt Express; 2014 Oct; 22 Suppl 6():A1596-603. PubMed ID: 25607317
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.
    Kim SK; Park HG
    Opt Express; 2013 Jun; 21(12):14566-72. PubMed ID: 23787644
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-walls.
    Jeong H; Kim YH; Seo TH; Lee HS; Kim JS; Suh EK; Jeong MS
    Opt Express; 2012 May; 20(10):10597-604. PubMed ID: 22565686
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.
    Nguyen HP; Cui K; Zhang S; Djavid M; Korinek A; Botton GA; Mi Z
    Nano Lett; 2012 Mar; 12(3):1317-23. PubMed ID: 22283508
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
    Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC
    Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006
    [TBL] [Abstract][Full Text] [Related]  

  • 39. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.
    Park H; Baik KH; Kim J; Ren F; Pearton SJ
    Opt Express; 2013 May; 21(10):12908-13. PubMed ID: 23736510
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN.
    Cho CY; Kwon MK; Lee SJ; Han SH; Kang JW; Kang SE; Lee DY; Park SJ
    Nanotechnology; 2010 May; 21(20):205201. PubMed ID: 20413842
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 13.