210 related articles for article (PubMed ID: 22422712)
1. n-Type reduced graphene oxide field-effect transistors (FETs) from photoactive metal oxides.
Yoo H; Kim Y; Lee J; Lee H; Yoon Y; Kim G; Lee H
Chemistry; 2012 Apr; 18(16):4923-9. PubMed ID: 22422712
[TBL] [Abstract][Full Text] [Related]
2. High Mobility of Graphene-Based Flexible Transparent Field Effect Transistors Doped with TiO2 and Nitrogen-Doped TiO2.
Wu YH; Tseng PY; Hsieh PY; Chou HT; Tai NH
ACS Appl Mater Interfaces; 2015 May; 7(18):9453-61. PubMed ID: 25905566
[TBL] [Abstract][Full Text] [Related]
3. Ambipolar and unipolar PbSe nanowire field-effect transistors.
Kim DK; Vemulkar TR; Oh SJ; Koh WK; Murray CB; Kagan CR
ACS Nano; 2011 Apr; 5(4):3230-6. PubMed ID: 21405024
[TBL] [Abstract][Full Text] [Related]
4. Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.
Wang L; Lian J; Cui P; Xu Y; Seo S; Lee J; Chan Y; Lee H
Chem Commun (Camb); 2012 Apr; 48(34):4052-4. PubMed ID: 22278380
[TBL] [Abstract][Full Text] [Related]
5. Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors.
Mao LF
Nanotechnology; 2009 Jul; 20(27):275203. PubMed ID: 19528675
[TBL] [Abstract][Full Text] [Related]
6. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.
Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM
ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892
[TBL] [Abstract][Full Text] [Related]
7. Real-time DNA detection using Pt nanoparticle-decorated reduced graphene oxide field-effect transistors.
Yin Z; He Q; Huang X; Zhang J; Wu S; Chen P; Lu G; Chen P; Zhang Q; Yan Q; Zhang H
Nanoscale; 2012 Jan; 4(1):293-7. PubMed ID: 22089471
[TBL] [Abstract][Full Text] [Related]
8. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.
Yu C; Liu H; Ni W; Gao N; Zhao J; Zhang H
Phys Chem Chem Phys; 2011 Feb; 13(8):3461-7. PubMed ID: 21240394
[TBL] [Abstract][Full Text] [Related]
9. Efficient photoinduced charge accumulation in reduced graphene oxide coupled with titania nanosheets to show highly enhanced and persistent conductance.
Cai X; Sakai N; Ozawa TC; Funatsu A; Ma R; Ebina Y; Sasaki T
ACS Appl Mater Interfaces; 2015 Jun; 7(21):11436-43. PubMed ID: 25945510
[TBL] [Abstract][Full Text] [Related]
10. High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.
Joung D; Chunder A; Zhai L; Khondaker SI
Nanotechnology; 2010 Apr; 21(16):165202. PubMed ID: 20348593
[TBL] [Abstract][Full Text] [Related]
11. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
Han SJ; Reddy D; Carpenter GD; Franklin AD; Jenkins KA
ACS Nano; 2012 Jun; 6(6):5220-6. PubMed ID: 22582702
[TBL] [Abstract][Full Text] [Related]
12. General observation of n-type field-effect behaviour in organic semiconductors.
Chua LL; Zaumseil J; Chang JF; Ou EC; Ho PK; Sirringhaus H; Friend RH
Nature; 2005 Mar; 434(7030):194-9. PubMed ID: 15758994
[TBL] [Abstract][Full Text] [Related]
13. Electrical detection of metal ions using field-effect transistors based on micropatterned reduced graphene oxide films.
Sudibya HG; He Q; Zhang H; Chen P
ACS Nano; 2011 Mar; 5(3):1990-4. PubMed ID: 21338084
[TBL] [Abstract][Full Text] [Related]
14. Chemical and biological sensing applications based on graphene field-effect transistors.
Ohno Y; Maehashi K; Matsumoto K
Biosens Bioelectron; 2010 Dec; 26(4):1727-30. PubMed ID: 20800470
[TBL] [Abstract][Full Text] [Related]
15. n-Type behavior of graphene supported on Si/SiO(2) substrates.
Romero HE; Shen N; Joshi P; Gutierrez HR; Tadigadapa SA; Sofo JO; Eklund PC
ACS Nano; 2008 Oct; 2(10):2037-44. PubMed ID: 19206449
[TBL] [Abstract][Full Text] [Related]
16. Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films.
Kim S; Zhao P; Aikawa S; Einarsson E; Chiashi S; Maruyama S
ACS Appl Mater Interfaces; 2015 May; 7(18):9702-8. PubMed ID: 25872933
[TBL] [Abstract][Full Text] [Related]
17. Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin.
Khaderbad MA; Tjoa V; Rao M; Phandripande R; Madhu S; Wei J; Ravikanth M; Mathews N; Mhaisalkar SG; Rao VR
ACS Appl Mater Interfaces; 2012 Mar; 4(3):1434-9. PubMed ID: 22332817
[TBL] [Abstract][Full Text] [Related]
18. Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors.
Kim DK; Lai Y; Vemulkar TR; Kagan CR
ACS Nano; 2011 Dec; 5(12):10074-83. PubMed ID: 22084980
[TBL] [Abstract][Full Text] [Related]
19. Centimeter-long and large-scale micropatterns of reduced graphene oxide films: fabrication and sensing applications.
He Q; Sudibya HG; Yin Z; Wu S; Li H; Boey F; Huang W; Chen P; Zhang H
ACS Nano; 2010 Jun; 4(6):3201-8. PubMed ID: 20441213
[TBL] [Abstract][Full Text] [Related]
20. Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.
Xu H; Wu J; Chen Y; Zhang H; Zhang J
Chem Asian J; 2013 Oct; 8(10):2446-52. PubMed ID: 23840025
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]