These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

249 related articles for article (PubMed ID: 22439604)

  • 21. Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.
    Rahaman SZ; Maikap S; Das A; Prakash A; Wu YH; Lai CS; Tien TC; Chen WS; Lee HY; Chen FT; Tsai MJ; Chang LB
    Nanoscale Res Lett; 2012 Nov; 7(1):614. PubMed ID: 23130908
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure.
    Jana D; Chakrabarti S; Rahaman SZ; Maikap S
    Nanoscale Res Lett; 2015 Dec; 10(1):392. PubMed ID: 26446075
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Improved Performance of the Al
    George T; Murugan AV
    ACS Appl Mater Interfaces; 2022 Nov; 14(45):51066-51083. PubMed ID: 36397313
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction.
    Yamasaki T; Takaoka R; Iimura S; Kim J; Hiramatsu H; Hosono H
    ACS Appl Mater Interfaces; 2022 May; 14(17):19766-19773. PubMed ID: 35438497
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO
    Zhang H; Yoo S; Menzel S; Funck C; Cüppers F; Wouters DJ; Hwang CS; Waser R; Hoffmann-Eifert S
    ACS Appl Mater Interfaces; 2018 Sep; 10(35):29766-29778. PubMed ID: 30088755
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Stable and reliable IGZO resistive switching device with HfAlO
    Peng H; Liu H; Ma X; Cheng X
    Nanotechnology; 2023 Jun; 34(36):. PubMed ID: 37192603
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Roles of conducting filament and non-filament regions in the Ta
    Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
    Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al
    Woo H; Vishwanath SK; Jeon S
    ACS Appl Mater Interfaces; 2018 Mar; 10(9):8124-8131. PubMed ID: 29441789
    [TBL] [Abstract][Full Text] [Related]  

  • 29. High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis.
    Kim J; Kwon O; Lee K; Han G; Hwang H
    Nanotechnology; 2023 Oct; 35(2):. PubMed ID: 37827148
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Transparent resistive switching memory using aluminum oxide on a flexible substrate.
    Yeom SW; Shin SC; Kim TY; Ha HJ; Lee YH; Shim JW; Ju BK
    Nanotechnology; 2016 Feb; 27(7):07LT01. PubMed ID: 26763473
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X; Li Y; Ai C; Wen D
    Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Variability Improvement of TiO
    Banerjee W; Xu X; Lv H; Liu Q; Long S; Liu M
    ACS Omega; 2017 Oct; 2(10):6888-6895. PubMed ID: 31457275
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
    Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
    Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Dynamic evolution of conducting nanofilament in resistive switching memories.
    Chen JY; Hsin CL; Huang CW; Chiu CH; Huang YT; Lin SJ; Wu WW; Chen LJ
    Nano Lett; 2013 Aug; 13(8):3671-7. PubMed ID: 23855543
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.
    Rahaman SZ; Maikap S
    Nanoscale Res Lett; 2013 Dec; 8(1):509. PubMed ID: 24305116
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Impact of oxygen exchange reaction at the ohmic interface in Ta
    Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
    Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.
    Maikap S; Jana D; Dutta M; Prakash A
    Nanoscale Res Lett; 2014; 9(1):292. PubMed ID: 24982604
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.
    Wang LG; Qian X; Cao YQ; Cao ZY; Fang GY; Li AD; Wu D
    Nanoscale Res Lett; 2015; 10():135. PubMed ID: 25852426
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Forming-free bipolar resistive switching in nonstoichiometric ceria films.
    Ismail M; Huang CY; Panda D; Hung CJ; Tsai TL; Jieng JH; Lin CA; Chand U; Rana AM; Ahmed E; Talib I; Nadeem MY; Tseng TY
    Nanoscale Res Lett; 2014 Jan; 9(1):45. PubMed ID: 24467984
    [TBL] [Abstract][Full Text] [Related]  

  • 40. RRAM characteristics using a new Cr/GdOx/TiN structure.
    Jana D; Dutta M; Samanta S; Maikap S
    Nanoscale Res Lett; 2014 Dec; 9(1):2404. PubMed ID: 26088980
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 13.