274 related articles for article (PubMed ID: 22443352)
1. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.
Hou JJ; Han N; Wang F; Xiu F; Yip S; Hui AT; Hung T; Ho JC
ACS Nano; 2012 Apr; 6(4):3624-30. PubMed ID: 22443352
[TBL] [Abstract][Full Text] [Related]
2. Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.
Hou JJ; Wang F; Han N; Xiu F; Yip S; Fang M; Lin H; Hung TF; Ho JC
ACS Nano; 2012 Oct; 6(10):9320-5. PubMed ID: 23020254
[TBL] [Abstract][Full Text] [Related]
3. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
Yang ZX; Han N; Wang F; Cheung HY; Shi X; Yip S; Hung T; Lee MH; Wong CY; Ho JC
Nanoscale; 2013 Oct; 5(20):9671-6. PubMed ID: 24056889
[TBL] [Abstract][Full Text] [Related]
4. Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.
Long YZ; Yu M; Sun B; Gu CZ; Fan Z
Chem Soc Rev; 2012 Jun; 41(12):4560-80. PubMed ID: 22573265
[TBL] [Abstract][Full Text] [Related]
5. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
Heiss M; Ketterer B; Uccelli E; Morante JR; Arbiol J; Fontcuberta i Morral A
Nanotechnology; 2011 May; 22(19):195601. PubMed ID: 21430322
[TBL] [Abstract][Full Text] [Related]
6. High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes.
Liu N; Zhou Y; Ai N; Luo C; Peng J; Wang J; Pei J; Cao Y
Langmuir; 2011 Dec; 27(24):14710-5. PubMed ID: 22043855
[TBL] [Abstract][Full Text] [Related]
7. Synthesis of long indium nitride nanowires with uniform diameters in large quantities.
Luo S; Zhou W; Zhang Z; Liu L; Dou X; Wang J; Zhao X; Liu D; Gao Y; Song L; Xiang Y; Zhou J; Xie S
Small; 2005 Oct; 1(10):1004-9. PubMed ID: 17193386
[TBL] [Abstract][Full Text] [Related]
8. Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications.
Yang ZX; Wang F; Han N; Lin H; Cheung HY; Fang M; Yip S; Hung T; Wong CY; Ho JC
ACS Appl Mater Interfaces; 2013 Nov; 5(21):10946-52. PubMed ID: 24107082
[TBL] [Abstract][Full Text] [Related]
9. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
Joyce HJ; Docherty CJ; Gao Q; Tan HH; Jagadish C; Lloyd-Hughes J; Herz LM; Johnston MB
Nanotechnology; 2013 May; 24(21):214006. PubMed ID: 23619012
[TBL] [Abstract][Full Text] [Related]
10. Doped ZnO nanowires obtained by thermal annealing.
Shan CX; Liu Z; Wong CC; Hark SK
J Nanosci Nanotechnol; 2007 Feb; 7(2):700-3. PubMed ID: 17450817
[TBL] [Abstract][Full Text] [Related]
11. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
Chang YK; Hong FC
Nanotechnology; 2009 May; 20(19):195302. PubMed ID: 19420638
[TBL] [Abstract][Full Text] [Related]
12. Transparent metal oxide nanowire transistors.
Chen D; Liu Z; Liang B; Wang X; Shen G
Nanoscale; 2012 May; 4(10):3001-12. PubMed ID: 22495655
[TBL] [Abstract][Full Text] [Related]
13. Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices.
Kee YY; Tan SS; Yong TK; Nee CH; Yap SS; Tou TY; Sáfrán G; Horváth ZE; Moscatello JP; Yap YK
Nanotechnology; 2012 Jan; 23(2):025706. PubMed ID: 22166812
[TBL] [Abstract][Full Text] [Related]
14. Growth of vertical InAs nanowires on heterostructured substrates.
Roddaro S; Caroff P; Biasiol G; Rossi F; Bocchi C; Nilsson K; Fröberg L; Wagner JB; Samuelson L; Wernersson LE; Sorba L
Nanotechnology; 2009 Jul; 20(28):285303. PubMed ID: 19546499
[TBL] [Abstract][Full Text] [Related]
15. High-quality ultralong Bi2S3 nanowires: structure, growth, and properties.
Yu Y; Jin CH; Wang RH; Chen Q; Peng LM
J Phys Chem B; 2005 Oct; 109(40):18772-6. PubMed ID: 16853415
[TBL] [Abstract][Full Text] [Related]
16. High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
Caroff P; Wagner JB; Dick KA; Nilsson HA; Jeppsson M; Deppert K; Samuelson L; Wallenberg LR; Wernersson LE
Small; 2008 Jul; 4(7):878-82. PubMed ID: 18576282
[No Abstract] [Full Text] [Related]
17. Stoichiometry dependent electron transport and gas sensing properties of indium oxide nanowires.
Gali P; Sapkota G; Syllaios AJ; Littler C; Philipose U
Nanotechnology; 2013 Jun; 24(22):225704. PubMed ID: 23644899
[TBL] [Abstract][Full Text] [Related]
18. Surface roughness induced electron mobility degradation in InAs nanowires.
Wang F; Yip S; Han N; Fok K; Lin H; Hou JJ; Dong G; Hung T; Chan KS; Ho JC
Nanotechnology; 2013 Sep; 24(37):375202. PubMed ID: 23965340
[TBL] [Abstract][Full Text] [Related]
19. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.
Zou X; Liu X; Wang C; Jiang Y; Wang Y; Xiao X; Ho JC; Li J; Jiang C; Xiong Q; Liao L
ACS Nano; 2013 Jan; 7(1):804-10. PubMed ID: 23228028
[TBL] [Abstract][Full Text] [Related]
20. Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates.
Han N; Wang F; Hui AT; Hou JJ; Shan G; Xiu F; Hung T; Ho JC
Nanotechnology; 2011 Jul; 22(28):285607. PubMed ID: 21654028
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
