These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

80 related articles for article (PubMed ID: 22460768)

  • 1. Electrochemical properties of GaN nanowire electrodes--influence of doping and control by external bias.
    Wallys J; Hoffmann S; Furtmayr F; Teubert J; Eickhoff M
    Nanotechnology; 2012 Apr; 23(16):165701. PubMed ID: 22460768
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.
    Calarco R; Meijers RJ; Debnath RK; Stoica T; Sutter E; Lüth H
    Nano Lett; 2007 Aug; 7(8):2248-51. PubMed ID: 17602537
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Nanowire-decorated microscale metallic electrodes.
    Vlad A; Mátéfi-Tempfli M; Antohe VA; Faniel S; Reckinger N; Olbrechts B; Crahay A; Bayot V; Piraux L; Melinte S; Mátéfi-Tempfli S
    Small; 2008 May; 4(5):557-60. PubMed ID: 18393260
    [No Abstract]   [Full Text] [Related]  

  • 4. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
    Parkinson P; Dodson C; Joyce HJ; Bertness KA; Sanford NA; Herz LM; Johnston MB
    Nano Lett; 2012 Sep; 12(9):4600-4. PubMed ID: 22924866
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A; Haddara YM; Lapierre RR
    Nanotechnology; 2010 Apr; 21(16):165601. PubMed ID: 20348594
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.
    Manna S; Ashok VD; De SK
    ACS Appl Mater Interfaces; 2010 Dec; 2(12):3539-43. PubMed ID: 21121615
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
    Cardin V; Dion-Bertrand LI; Grégoire P; Nguyen HP; Sakowicz M; Mi Z; Silva C; Leonelli R
    Nanotechnology; 2013 Feb; 24(4):045702. PubMed ID: 23299780
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Metal/Conducting-polymer composite nanowires.
    Meenach SA; Burdick J; Kunwar A; Wang J
    Small; 2007 Feb; 3(2):239-43. PubMed ID: 17199245
    [No Abstract]   [Full Text] [Related]  

  • 9. Si/a-Si core/shell nanowires as nonvolatile crossbar switches.
    Dong Y; Yu G; McAlpine MC; Lu W; Lieber CM
    Nano Lett; 2008 Feb; 8(2):386-91. PubMed ID: 18220442
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Breakdown enhancement in silicon nanowire p-n junctions.
    Agarwal P; Vijayaraghavan MN; Neuilly F; Hijzen E; Hurkx GA
    Nano Lett; 2007 Apr; 7(4):896-9. PubMed ID: 17348715
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Fully depleted nanowire field-effect transistor in inversion mode.
    Hayden O; Björk MT; Schmid H; Riel H; Drechsler U; Karg SF; Lörtscher E; Riess W
    Small; 2007 Feb; 3(2):230-4. PubMed ID: 17199244
    [No Abstract]   [Full Text] [Related]  

  • 12. Crystallographic alignment of high-density gallium nitride nanowire arrays.
    Kuykendall T; Pauzauskie PJ; Zhang Y; Goldberger J; Sirbuly D; Denlinger J; Yang P
    Nat Mater; 2004 Aug; 3(8):524-8. PubMed ID: 15273744
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.
    Schumann T; Gotschke T; Limbach F; Stoica T; Calarco R
    Nanotechnology; 2011 Mar; 22(9):095603. PubMed ID: 21270490
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Manganese-induced growth of GaAs nanowires.
    Martelli F; Rubini S; Piccin M; Bais G; Jabeen F; De Franceschi S; Grillo V; Carlino E; D'Acapito F; Boscherini F; Cabrini S; Lazzarino M; Businaro L; Romanato F; Franciosi A
    Nano Lett; 2006 Sep; 6(9):2130-4. PubMed ID: 16968038
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-aspect-ratio nanogap electrodes for averaging molecular conductance measurements.
    Luber SM; Zhang F; Lingitz S; Hansen AG; Scheliga F; Thorn-Csányi E; Bichler M; Tornow M
    Small; 2007 Feb; 3(2):285-9. PubMed ID: 17262757
    [No Abstract]   [Full Text] [Related]  

  • 16. Structure and elemental distribution of (Ga,Mn)N nanowires.
    Urban A; Malindretos J; Seibt M; Rizzi A
    Nano Lett; 2011 Feb; 11(2):398-401. PubMed ID: 21171626
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Hydrothermally processed TiO2 nanowire electrodes with antireflective and electrochromic properties.
    Chen JZ; Ko WY; Yen YC; Chen PH; Lin KJ
    ACS Nano; 2012 Aug; 6(8):6633-9. PubMed ID: 22757633
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Superior electrochemical performance of carbon nanotubes directly grown on sharp microelectrodes.
    Ansaldo A; Castagnola E; Maggiolini E; Fadiga L; Ricci D
    ACS Nano; 2011 Mar; 5(3):2206-14. PubMed ID: 21341752
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Realization of a linear germanium nanowire p-n junction.
    Tutuc E; Appenzeller J; Reuter MC; Guha S
    Nano Lett; 2006 Sep; 6(9):2070-4. PubMed ID: 16968027
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ge/Si nanowire mesoscopic Josephson junctions.
    Xiang J; Vidan A; Tinkham M; Westervelt RM; Lieber CM
    Nat Nanotechnol; 2006 Dec; 1(3):208-13. PubMed ID: 18654188
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 4.