These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

128 related articles for article (PubMed ID: 22467223)

  • 1. High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates.
    Kim TI; Jung YH; Song J; Kim D; Li Y; Kim HS; Song IS; Wierer JJ; Pao HA; Huang Y; Rogers JA
    Small; 2012 Jun; 8(11):1643-9. PubMed ID: 22467223
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.
    Yin Z; Liu X; Wu Y; Hao X; Xu X
    Opt Express; 2012 Jan; 20(2):1013-21. PubMed ID: 22274448
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.
    Jang HW; Ryu SW; Yu HK; Lee S; Lee JL
    Nanotechnology; 2010 Jan; 21(2):025203. PubMed ID: 19955615
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
    Park YJ; Kim HY; Ryu JH; Kim HK; Kang JH; Han N; Han M; Jeong H; Jeong MS; Hong CH
    Opt Express; 2011 Jan; 19(3):2029-36. PubMed ID: 21369019
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T; Kong Q; Wang J; Li J; Zeng Y; Wang G; Li J; Liao Y; Yi F
    Opt Express; 2011 Jan; 19(2):1065-71. PubMed ID: 21263645
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.
    Chen JT; Lai WC; Kao YJ; Yang YY; Sheu JK
    Opt Express; 2012 Feb; 20(5):5689-95. PubMed ID: 22418376
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Zhang ZH; Tan ST; Liu W; Ju Z; Zheng K; Kyaw Z; Ji Y; Hasanov N; Sun XW; Demir HV
    Opt Express; 2013 Feb; 21(4):4958-69. PubMed ID: 23482028
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks.
    Kim SJ; Kim KH; Kim TG
    Opt Express; 2013 Apr; 21(7):8062-8. PubMed ID: 23571896
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
    Zhao Y; Yan Q; Feezell D; Fujito K; Van de Walle CG; Speck JS; DenBaars SP; Nakamura S
    Opt Express; 2013 Jan; 21 Suppl 1():A53-9. PubMed ID: 23389275
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.
    Kim SH; Park HH; Song YH; Park HJ; Kim JB; Jeon SR; Jeong H; Jeong MS; Yang GM
    Opt Express; 2013 Mar; 21(6):7125-30. PubMed ID: 23546094
    [TBL] [Abstract][Full Text] [Related]  

  • 11. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
    Kyaw Z; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Hasanov N; Zhu B; Lu S; Zhang Y; Sun XW; Demir HV
    Opt Express; 2014 Jan; 22(1):809-16. PubMed ID: 24515040
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
    Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Gallium nitride nanowire based nanogenerators and light-emitting diodes.
    Chen CY; Zhu G; Hu Y; Yu JW; Song J; Cheng KY; Peng LH; Chou LJ; Wang ZL
    ACS Nano; 2012 Jun; 6(6):5687-92. PubMed ID: 22607154
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Light-output enhancement of GaN-based light-emitting diodes with three-dimensional backside reflectors patterned by microscale cone array.
    Huang H; Hu J; Wang H
    ScientificWorldJournal; 2014; 2014():837586. PubMed ID: 25133262
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
    Ryu JH; Kim HY; Kim HK; Katharria YS; Han N; Kang JH; Park YJ; Han M; Ryu BD; Ko KB; Suh EK; Hong CH
    Opt Express; 2012 Apr; 20(9):9999-10003. PubMed ID: 22535092
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Prospects of III-nitride optoelectronics grown on Si.
    Zhu D; Wallis DJ; Humphreys CJ
    Rep Prog Phys; 2013 Oct; 76(10):106501. PubMed ID: 24088511
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
    Wang XH; Fu WY; Lai PT; Choi HW
    Opt Express; 2009 Dec; 17(25):22311-9. PubMed ID: 20052154
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region.
    Kim G; Kim JH; Park EH; Kang D; Park BG
    Opt Express; 2014 Jan; 22(2):1235-42. PubMed ID: 24515129
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
    Seo YG; Baik KH; Song H; Son JS; Oh K; Hwang SM
    Opt Express; 2011 Jul; 19(14):12919-24. PubMed ID: 21747444
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.
    Kim SK; Lee JW; Ee HS; Moon YT; Kwon SH; Kwon H; Park HG
    Opt Express; 2010 May; 18(11):11025-32. PubMed ID: 20588958
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.