These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

377 related articles for article (PubMed ID: 22481185)

  • 1. Carrier dynamics in type-II GaAsSb/GaAs quantum wells.
    Baranowski M; Syperek M; Kudrawiec R; Misiewicz J; Gupta JA; Wu X; Wang R
    J Phys Condens Matter; 2012 May; 24(18):185801. PubMed ID: 22481185
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.
    Tatebayashi J; Liang BL; Laghumavarapu RB; Bussian DA; Htoon H; Klimov V; Balakrishnan G; Dawson LR; Huffaker DL
    Nanotechnology; 2008 Jul; 19(29):295704. PubMed ID: 21730609
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Recombination dynamics in CdTe/CdSe type-II quantum dots.
    Wang CH; Chen TT; Chen YF; Ho ML; Lai CW; Chou PT
    Nanotechnology; 2008 Mar; 19(11):115702. PubMed ID: 21730562
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.
    Wang H; Ji Z; Qu S; Wang G; Jiang Y; Liu B; Xu X; Mino H
    Opt Express; 2012 Feb; 20(4):3932-40. PubMed ID: 22418149
    [TBL] [Abstract][Full Text] [Related]  

  • 5. InAs/GaAsSb quantum dot solar cells.
    Hatch S; Wu J; Sablon K; Lam P; Tang M; Jiang Q; Liu H
    Opt Express; 2014 May; 22 Suppl 3():A679-85. PubMed ID: 24922376
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells.
    Lourenço SA; da Silva MA; Dias IF; Duarte JL; Harmand JC
    J Phys Condens Matter; 2011 Aug; 23(32):325801. PubMed ID: 21785181
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Temperature effect of activation energy for GaSb quantum dots using variable temperature photoluminescence.
    Yin H; Li G; Jiang C
    J Nanosci Nanotechnol; 2013 Feb; 13(2):1022-5. PubMed ID: 23646563
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process.
    Liu WS; Chu TF; Huang TH
    Opt Express; 2014 Dec; 22(25):30963-74. PubMed ID: 25607045
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content.
    Gholami M; Haratizadeh H; Esmaeili M; Amiri R; Holtz PO; Hammar M
    Nanotechnology; 2008 Aug; 19(31):315705. PubMed ID: 21828797
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components.
    Li H; Tang J; Pang G; Wang D; Fang X; Chen R; Wei Z
    RSC Adv; 2019 Nov; 9(65):38114-38118. PubMed ID: 35541770
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.
    Baranowski M; Kudrawiec R; Latkowska M; Syperek M; Misiewicz J; Sarmiento T; Harris JS
    J Phys Condens Matter; 2013 Feb; 25(6):065801. PubMed ID: 23306016
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.
    Liang BL; Wong PS; Pavarelli N; Tatebayashi J; Ochalski TJ; Huyet G; Huffaker DL
    Nanotechnology; 2011 Feb; 22(5):055706. PubMed ID: 21178233
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well.
    Yang L; Motohisa J; Tomioka K; Takeda J; Fukui T; Geng MM; Jia LX; Zhang L; Liu YL
    Nanotechnology; 2008 Jul; 19(27):275304. PubMed ID: 21828700
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Investigation of temperature-dependent photoluminescence in multi-quantum wells.
    Fang Y; Wang L; Sun Q; Lu T; Deng Z; Ma Z; Jiang Y; Jia H; Wang W; Zhou J; Chen H
    Sci Rep; 2015 Jul; 5():12718. PubMed ID: 26228734
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Kinetic hole burning, hole filling, and conformational relaxation in heme proteins: direct evidence for the functional significance of a hierarchy of dynamical processes.
    Huang J; Ridsdale A; Wang J; Friedman JM
    Biochemistry; 1997 Nov; 36(47):14353-65. PubMed ID: 9398153
    [TBL] [Abstract][Full Text] [Related]  

  • 16. T-shaped GaAs quantum-wire lasers and the exciton Mott transition.
    Yoshita M; Liu SM; Okano M; Hayamizu Y; Akiyama H; Pfeiffer LN; West KW
    J Phys Condens Matter; 2007 Jul; 19(29):295217. PubMed ID: 21483069
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Chromophore/DNA interactions: femto- to nanosecond spectroscopy, NMR structure, and electron transfer theory.
    von Feilitzsch T; Tuma J; Neubauer H; Verdier L; Haselsberger R; Feick R; Gurzadyan G; Voityuk AA; Griesinger C; Michel-Beyerle ME
    J Phys Chem B; 2008 Jan; 112(3):973-89. PubMed ID: 18163608
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Time-resolved photoluminescence spectra of Si species encapsulated in zeolite supercages.
    Tanaka K; Komatsu Y; Choo CK
    J Phys Chem B; 2005 Jan; 109(2):736-42. PubMed ID: 16866435
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.
    Mazur YI; Dorogan VG; Schmidbauer M; Tarasov GG; Johnson SR; Lu X; Yu SQ; Wang ZhM; Tiedje T; Salamo GJ
    Nanotechnology; 2011 Sep; 22(37):375703. PubMed ID: 21852736
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Hole transfer from single quantum dots.
    Song N; Zhu H; Jin S; Lian T
    ACS Nano; 2011 Nov; 5(11):8750-9. PubMed ID: 21962001
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 19.