1127 related articles for article (PubMed ID: 22481430)
1. Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.
Farrell RA; Kinahan NT; Hansel S; Stuen KO; Petkov N; Shaw MT; West LE; Djara V; Dunne RJ; Varona OG; Gleeson PG; Jung SJ; Kim HY; Koleśnik MM; Lutz T; Murray CP; Holmes JD; Nealey PF; Duesberg GS; Krstić V; Morris MA
Nanoscale; 2012 May; 4(10):3228-36. PubMed ID: 22481430
[TBL] [Abstract][Full Text] [Related]
2. Controllable doping and wrap-around contacts to electrolessly etched silicon nanowire arrays.
Sadhu JS; Tian H; Spila T; Kim J; Azeredo B; Ferreira P; Sinha S
Nanotechnology; 2014 Sep; 25(37):375701. PubMed ID: 25148135
[TBL] [Abstract][Full Text] [Related]
3. Silicon oxide nanowires: facile and controlled large area fabrication of vertically oriented silicon oxide nanowires for photoluminescence and sensor applications.
Alabi TR; Yuan D; Bucknall D; Das S
ACS Appl Mater Interfaces; 2013 Sep; 5(18):8932-8. PubMed ID: 23915216
[TBL] [Abstract][Full Text] [Related]
4. Patterning of various silicon structures via polymer lithography and catalytic chemical etching.
Lee JP; Bang BM; Choi S; Kim T; Park S
Nanotechnology; 2011 Jul; 22(27):275305. PubMed ID: 21597138
[TBL] [Abstract][Full Text] [Related]
5. Large-scale controllable patterning growth of aligned organic nanowires through evaporation-induced self-assembly.
Bao R; Zhang C; Wang Z; Zhang X; Ou X; Lee CS; Jie J; Zhang X
Chemistry; 2012 Jan; 18(3):975-80. PubMed ID: 22170498
[TBL] [Abstract][Full Text] [Related]
6. Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications.
Cushen JD; Otsuka I; Bates CM; Halila S; Fort S; Rochas C; Easley JA; Rausch EL; Thio A; Borsali R; Willson CG; Ellison CJ
ACS Nano; 2012 Apr; 6(4):3424-33. PubMed ID: 22456229
[TBL] [Abstract][Full Text] [Related]
7. Solution patterning of ultrafine ITO and ZnRh₂O₄ nanowire array below 20 nm without etching process.
Xia G; Wang S
Nanoscale; 2011 Sep; 3(9):3598-600. PubMed ID: 21814701
[TBL] [Abstract][Full Text] [Related]
8. Top-down fabrication of sub-30 nm monocrystalline silicon nanowires using conventional microfabrication.
Chen S; Bomer JG; van der Wiel WG; Carlen ET; van den Berg A
ACS Nano; 2009 Nov; 3(11):3485-92. PubMed ID: 19856905
[TBL] [Abstract][Full Text] [Related]
9. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.
Habicht S; Zhao QT; Feste SF; Knoll L; Trellenkamp S; Ghyselen B; Mantl S
Nanotechnology; 2010 Mar; 21(10):105701. PubMed ID: 20154367
[TBL] [Abstract][Full Text] [Related]
10. Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment.
Lee CH; Ritz CS; Huang M; Ziwisky MW; Blise RJ; Lagally MG
Nanotechnology; 2011 Feb; 22(5):055704. PubMed ID: 21178224
[TBL] [Abstract][Full Text] [Related]
11. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures.
Wu Y; Xiang J; Yang C; Lu W; Lieber CM
Nature; 2004 Jul; 430(6995):61-5. PubMed ID: 15229596
[TBL] [Abstract][Full Text] [Related]
12. Sub-10 nm nanofabrication via nanoimprint directed self-assembly of block copolymers.
Park SM; Liang X; Harteneck BD; Pick TE; Hiroshiba N; Wu Y; Helms BA; Olynick DL
ACS Nano; 2011 Nov; 5(11):8523-31. PubMed ID: 21995511
[TBL] [Abstract][Full Text] [Related]
13. Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors.
Moselund KE; Ghoneim H; Schmid H; Björk MT; Lörtscher E; Karg S; Signorello G; Webb D; Tschudy M; Beyeler R; Riel H
Nanotechnology; 2010 Oct; 21(43):435202. PubMed ID: 20890021
[TBL] [Abstract][Full Text] [Related]
14. Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer.
Cummins C; Gangnaik A; Kelly RA; Borah D; O'Connell J; Petkov N; Georgiev YM; Holmes JD; Morris MA
Nanoscale; 2015 Apr; 7(15):6712-21. PubMed ID: 25798892
[TBL] [Abstract][Full Text] [Related]
15. Effect of nanowire number, diameter, and doping density on nano-FET biosensor sensitivity.
Li J; Zhang Y; To S; You L; Sun Y
ACS Nano; 2011 Aug; 5(8):6661-8. PubMed ID: 21815637
[TBL] [Abstract][Full Text] [Related]
16. Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties.
Ghoshal T; Ntaras C; O'Connell J; Shaw MT; Holmes JD; Avgeropoulos A; Morris MA
Nanoscale; 2016 Jan; 8(4):2177-87. PubMed ID: 26731306
[TBL] [Abstract][Full Text] [Related]
17. Deconvoluting the mechanism of microwave annealing of block copolymer thin films.
Jin C; Murphy JN; Harris KD; Buriak JM
ACS Nano; 2014 Apr; 8(4):3979-91. PubMed ID: 24655292
[TBL] [Abstract][Full Text] [Related]
18. Electrochemical synthesis of highly ordered nanowires with a rectangular cross section using an in-plane nanochannel array.
Sergelius P; Moreno JM; Rahimi W; Waleczek M; Zierold R; Görlitz D; Nielsch K
Nanotechnology; 2014 Dec; 25(50):504002. PubMed ID: 25426643
[TBL] [Abstract][Full Text] [Related]
19. Interface interaction induced ultra-dense nanoparticles assemblies.
Song Y; Wang Y; Li BB; Fernandes C; Ruda HE
Nanoscale; 2013 Aug; 5(15):6779-89. PubMed ID: 23793729
[TBL] [Abstract][Full Text] [Related]
20. Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning.
Giammaria TJ; Gharbi A; Paquet A; Nealey P; Tiron R
Nanomaterials (Basel); 2020 Dec; 10(12):. PubMed ID: 33297348
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]