These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

234 related articles for article (PubMed ID: 22498627)

  • 1. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices.
    Kobayashi Y; Kumakura K; Akasaka T; Makimoto T
    Nature; 2012 Apr; 484(7393):223-7. PubMed ID: 22498627
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes.
    Park AH; Seo TH
    Materials (Basel); 2023 Nov; 16(22):. PubMed ID: 38005145
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
    Vuong P; Sundaram S; Mballo A; Patriarche G; Leone S; Benkhelifa F; Karrakchou S; Moudakir T; Gautier S; Voss PL; Salvestrini JP; Ougazzaden A
    ACS Appl Mater Interfaces; 2020 Dec; 12(49):55460-55466. PubMed ID: 33237738
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer.
    Motala MJ; Blanton EW; Hilton A; Heller E; Muratore C; Burzynski K; Brown JL; Chabak K; Durstock M; Snure M; Glavin NR
    ACS Appl Mater Interfaces; 2020 May; 12(19):21837-21844. PubMed ID: 32295338
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode.
    Wang L; Yang S; Zhou F; Gao Y; Duo Y; Chen R; Yang J; Yan J; Wang J; Li J; Zhang Y; Wei T
    Small; 2024 Feb; 20(7):e2306132. PubMed ID: 37800612
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.
    Glavin NR; Chabak KD; Heller ER; Moore EA; Prusnick TA; Maruyama B; Walker DE; Dorsey DL; Paduano Q; Snure M
    Adv Mater; 2017 Dec; 29(47):. PubMed ID: 29094392
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications.
    Yu J; Wang L; Hao Z; Luo Y; Sun C; Wang J; Han Y; Xiong B; Li H
    Adv Mater; 2020 Apr; 32(15):e1903407. PubMed ID: 31486182
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications.
    Moon S; Chang SJ; Kim Y; Okello OFN; Kim J; Kim J; Jung HW; Ahn HK; Kim DS; Choi SY; Lee J; Lim JW; Kim JK
    ACS Appl Mater Interfaces; 2021 Dec; 13(49):59440-59449. PubMed ID: 34792331
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration.
    Zang K; Cheong D; Liu H; Liu H; Teng J; Chua S
    Nanoscale Res Lett; 2010 Apr; 5(6):1051-6. PubMed ID: 20672057
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.
    Liu F; Yu Y; Zhang Y; Rong X; Wang T; Zheng X; Sheng B; Yang L; Wei J; Wang X; Li X; Yang X; Xu F; Qin Z; Zhang Z; Shen B; Wang X
    Adv Sci (Weinh); 2020 Nov; 7(21):2000917. PubMed ID: 33173724
    [TBL] [Abstract][Full Text] [Related]  

  • 11. New 2D Structural Materials: Carbon-Gallium Nitride (CC-GaN) and Boron-Gallium Nitride (BN-GaN) Heterostructures-Materials Design Through Density Functional Theory.
    Elloh VW; Yaya A; Gebreyesus G; Dua P; Mishra AK
    ACS Omega; 2019 Jan; 4(1):1722-1728. PubMed ID: 31459429
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED.
    Choi I; Lee K; Lee CR; Lee JS; Kim SM; Jeong KU; Kim JS
    ACS Appl Mater Interfaces; 2019 May; 11(20):18876-18884. PubMed ID: 31037936
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.
    Sun Y; Zhou K; Feng M; Li Z; Zhou Y; Sun Q; Liu J; Zhang L; Li D; Sun X; Li D; Zhang S; Ikeda M; Yang H
    Light Sci Appl; 2018; 7():13. PubMed ID: 30839586
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique.
    Yulianto N; Refino AD; Syring A; Majid N; Mariana S; Schnell P; Wahyuono RA; Triyana K; Meierhofer F; Daum W; Abdi FF; Voss T; Wasisto HS; Waag A
    Microsyst Nanoeng; 2021; 7():32. PubMed ID: 34567746
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates.
    Chen J; Wang G; Meng J; Cheng Y; Yin Z; Tian Y; Huang J; Zhang S; Wu J; Zhang X
    ACS Appl Mater Interfaces; 2022 Feb; 14(5):7004-7011. PubMed ID: 35080841
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Blue inorganic light emitting diode on flexible polyimide substrate using laser lift-off process.
    Barange N; Kim YD; Ko H; Park JS; Park B; Ko DH; Han IK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8237-41. PubMed ID: 25958507
    [TBL] [Abstract][Full Text] [Related]  

  • 17. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Semiconductor-Insulator-Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure.
    Jeong H; Bang S; Oh HM; Jeong HJ; An SJ; Han GH; Kim H; Kim KK; Park JC; Lee YH; Lerondel G; Jeong MS
    ACS Nano; 2015 Oct; 9(10):10032-8. PubMed ID: 26434984
    [TBL] [Abstract][Full Text] [Related]  

  • 19. GaN/NbN epitaxial semiconductor/superconductor heterostructures.
    Yan R; Khalsa G; Vishwanath S; Han Y; Wright J; Rouvimov S; Katzer DS; Nepal N; Downey BP; Muller DA; Xing HG; Meyer DJ; Jena D
    Nature; 2018 Mar; 555(7695):183-189. PubMed ID: 29516996
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Enhanced Photoluminescence of Flexible InGaN/GaN Multiple Quantum Wells on Fabric by Piezo-Phototronic Effect.
    Sha W; Hua Q; Wang J; Cong Z; Cui X; Ji K; Dai X; Wang B; Guo W; Hu W
    ACS Appl Mater Interfaces; 2022 Jan; 14(2):3000-3007. PubMed ID: 34990111
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.