160 related articles for article (PubMed ID: 22512336)
1. Remote doping and Schottky barrier formation in strongly quantum confined single PbSe nanowire field-effect transistors.
Oh SJ; Kim DK; Kagan CR
ACS Nano; 2012 May; 6(5):4328-34. PubMed ID: 22512336
[TBL] [Abstract][Full Text] [Related]
2. Ambipolar and unipolar PbSe nanowire field-effect transistors.
Kim DK; Vemulkar TR; Oh SJ; Koh WK; Murray CB; Kagan CR
ACS Nano; 2011 Apr; 5(4):3230-6. PubMed ID: 21405024
[TBL] [Abstract][Full Text] [Related]
3. Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors.
Kim DK; Lai Y; Vemulkar TR; Kagan CR
ACS Nano; 2011 Dec; 5(12):10074-83. PubMed ID: 22084980
[TBL] [Abstract][Full Text] [Related]
4. Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating.
Lokteva I; Thiemann S; Gannott F; Zaumseil J
Nanoscale; 2013 May; 5(10):4230-5. PubMed ID: 23545580
[TBL] [Abstract][Full Text] [Related]
5. The Effect of Dielectric Environment on Doping Efficiency in Colloidal PbSe Nanostructures.
Zhao Q; Zhao T; Guo J; Chen W; Zhang M; Kagan CR
ACS Nano; 2018 Feb; 12(2):1313-1320. PubMed ID: 29346726
[TBL] [Abstract][Full Text] [Related]
6. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
Barreda JL; Keiper TD; Zhang M; Xiong P
ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114
[TBL] [Abstract][Full Text] [Related]
7. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.
Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL
ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197
[TBL] [Abstract][Full Text] [Related]
8. Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.
Liu C; Dai L; You LP; Xu WJ; Qin GG
Nanotechnology; 2008 Nov; 19(46):465203. PubMed ID: 21836237
[TBL] [Abstract][Full Text] [Related]
9. PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors.
Talapin DV; Murray CB
Science; 2005 Oct; 310(5745):86-9. PubMed ID: 16210533
[TBL] [Abstract][Full Text] [Related]
10. Schottky barrier and contact resistance of InSb nanowire field-effect transistors.
Fan D; Kang N; Ghalamestani SG; Dick KA; Xu HQ
Nanotechnology; 2016 Jul; 27(27):275204. PubMed ID: 27232588
[TBL] [Abstract][Full Text] [Related]
11. Thermally assisted tunnelling in ambipolar field-effect transistors based on fullerene peapod bundles.
Guo A; Fu Y; Guan L; Liu J; Shi Z; Gu Z; Huang R; Zhang X
Nanotechnology; 2006 May; 17(10):2655-60. PubMed ID: 21727520
[TBL] [Abstract][Full Text] [Related]
12. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.
Oh SJ; Berry NE; Choi JH; Gaulding EA; Paik T; Hong SH; Murray CB; Kagan CR
ACS Nano; 2013 Mar; 7(3):2413-21. PubMed ID: 23368728
[TBL] [Abstract][Full Text] [Related]
13. Electron and hole mobilities in single-layer WSe2.
Allain A; Kis A
ACS Nano; 2014 Jul; 8(7):7180-5. PubMed ID: 24949529
[TBL] [Abstract][Full Text] [Related]
14. An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires.
Wang F; Seo JH; Bayerl D; Shi J; Mi H; Ma Z; Zhao D; Shuai Y; Zhou W; Wang X
Nanotechnology; 2011 Jun; 22(22):225602. PubMed ID: 21454935
[TBL] [Abstract][Full Text] [Related]
15. Dependences of the electrical properties on the diameter and the doping concentration of the Si nanowire field effect transistors with a Schottky metal-semiconductor contact.
You JH; Lee SH; You CH; Yu YS; Kim TW
J Nanosci Nanotechnol; 2010 May; 10(5):3609-13. PubMed ID: 20359010
[TBL] [Abstract][Full Text] [Related]
16. Ambipolar MoS
Giannazzo F; Fisichella G; Greco G; Di Franco S; Deretzis I; La Magna A; Bongiorno C; Nicotra G; Spinella C; Scopelliti M; Pignataro B; Agnello S; Roccaforte F
ACS Appl Mater Interfaces; 2017 Jul; 9(27):23164-23174. PubMed ID: 28603968
[TBL] [Abstract][Full Text] [Related]
17. Solution-based stoichiometric control over charge transport in nanocrystalline CdSe devices.
Kim DK; Fafarman AT; Diroll BT; Chan SH; Gordon TR; Murray CB; Kagan CR
ACS Nano; 2013 Oct; 7(10):8760-70. PubMed ID: 24047327
[TBL] [Abstract][Full Text] [Related]
18. Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors.
Mohammad SN
Nanotechnology; 2013 Nov; 24(45):455201. PubMed ID: 24129340
[TBL] [Abstract][Full Text] [Related]
19. Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications.
Cai J; Jie J; Jiang P; Wu D; Xie C; Wu C; Wang Z; Yu Y; Wang L; Zhang X; Peng Q; Jiang Y
Phys Chem Chem Phys; 2011 Aug; 13(32):14663-7. PubMed ID: 21709907
[TBL] [Abstract][Full Text] [Related]
20. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.
Zhao Y; Candebat D; Delker C; Zi Y; Janes D; Appenzeller J; Yang C
Nano Lett; 2012 Oct; 12(10):5331-6. PubMed ID: 22950905
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]