These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

208 related articles for article (PubMed ID: 22565776)

  • 21. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.
    Ma X; Li D; Zhao S; Li G; Yang K
    Nanoscale Res Lett; 2014; 9(1):580. PubMed ID: 25337061
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Laser-induced oxidation kinetics of bismuth surface microdroplets on GaAsBi studied in situ by Raman microprobe analysis.
    Steele JA; Lewis RA
    Opt Express; 2014 Dec; 22(26):32261-75. PubMed ID: 25607191
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing.
    Kang H; Kim JS; Hwang SI; Park YH; Ko DK; Lee J
    Opt Express; 2008 Sep; 16(20):15728-32. PubMed ID: 18825211
    [TBL] [Abstract][Full Text] [Related]  

  • 24. 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm.
    Korpijärvi VM; Leinonen T; Puustinen J; Härkönen A; Guina MD
    Opt Express; 2010 Dec; 18(25):25633-41. PubMed ID: 21164909
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Q-switched mode-locked erbium-doped fiber laser based on topological insulator Bi(2)Se(3) deposited fiber taper.
    Gao L; Huang W; Zhang JD; Zhu T; Zhang H; Zhao CJ; Zhang W; Zhang H
    Appl Opt; 2014 Aug; 53(23):5117-22. PubMed ID: 25320919
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A; Jiang Q; Tang M; Seeds A; Liu H
    Opt Express; 2012 Sep; 20(20):22181-7. PubMed ID: 23037366
    [TBL] [Abstract][Full Text] [Related]  

  • 27. High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks.
    Dutta N; Murakowski JA; Shi S; Prather DW
    Opt Express; 2010 May; 18(11):11242-9. PubMed ID: 20588984
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Optimization of the pulse-width of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber.
    Han C; Zhao S; Li D; Li G; Yang K; Zhang G; Cheng K
    Appl Opt; 2011 Nov; 50(31):5970-6. PubMed ID: 22086022
    [TBL] [Abstract][Full Text] [Related]  

  • 29. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.
    Cao Y; Ji H; Xu P; Gu Y; Ma W; Yang T
    Opt Lett; 2012 Oct; 37(19):4071-3. PubMed ID: 23027282
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.
    Li F; Mi Z; Vicknesh S
    Opt Lett; 2009 Oct; 34(19):2915-7. PubMed ID: 19794766
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Optoelectronics: a deep-level LED.
    Prasad S
    Nat Mater; 2003 Jun; 2(6):359-60. PubMed ID: 12776097
    [No Abstract]   [Full Text] [Related]  

  • 32. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K; Guimard D; Bordel D; Iwamoto S; Arakawa Y
    Opt Express; 2010 May; 18(10):10604-8. PubMed ID: 20588912
    [TBL] [Abstract][Full Text] [Related]  

  • 33. A high spectral sensitivity interferometer based on the dispersive property of the semiconductor GaAs.
    Cai Y; Zhang Y; Yang C; Dang B; Wang J; Yuan P
    Opt Express; 2009 Nov; 17(24):22254-9. PubMed ID: 19997473
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Optical filter based on two coupled PhC GaAs-membranes.
    Stomeo T; Grande M; Rainò G; Passaseo A; D'Orazio A; Cingolani R; Locatelli A; Modotto D; De Angelis C; De Vittorio M
    Opt Lett; 2010 Feb; 35(3):411-3. PubMed ID: 20125738
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.
    Lee J; Wu J; Ryu JH; Liu Z; Meitl M; Zhang YW; Huang Y; Rogers JA
    Small; 2012 Jun; 8(12):1851-6. PubMed ID: 22467638
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Broadband sensitive pump-probe setup for ultrafast optical switching of photonic nanostructures and semiconductors.
    Euser TG; Harding PJ; Vos WL
    Rev Sci Instrum; 2009 Jul; 80(7):073104. PubMed ID: 19655940
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Excitation wavelength dependence of phase matched terahertz emission from a GaAs slab.
    Peter F; Winnerl S; Schneider H; Helm M
    Opt Express; 2010 Sep; 18(19):19574-80. PubMed ID: 20940853
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires.
    Usman M
    Nanoscale; 2020 Oct; 12(40):20973-20983. PubMed ID: 33053001
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Effects of a low-level semiconductor gallium arsenide laser on local pathological alterations induced by Bothrops moojeni snake venom.
    Aranha de Sousa E; Bittencourt JA; Seabra de Oliveira NK; Correia Henriques SV; dos Santos Picanço LC; Lobato CP; Ribeiro JR; Pereira WL; Carvalho JC; da Silva JO
    Photochem Photobiol Sci; 2013 Oct; 12(10):1895-902. PubMed ID: 23995306
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Electrical and optical transport of GaAs/carbon nanotube heterojunctions.
    Liang CW; Roth S
    Nano Lett; 2008 Jul; 8(7):1809-12. PubMed ID: 18529033
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.