These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

177 related articles for article (PubMed ID: 22594554)

  • 1. VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.
    Tateno K; Zhang G; Gotoh H; Sogawa T
    Nano Lett; 2012 Jun; 12(6):2888-93. PubMed ID: 22594554
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Growth and characterization of InP nanowires with InAsP insertions.
    Tchernycheva M; Cirlin GE; Patriarche G; Travers L; Zwiller V; Perinetti U; Harmand JC
    Nano Lett; 2007 Jun; 7(6):1500-4. PubMed ID: 17480113
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
    Eymery J; Rieutord F; Favre-Nicolin V; Robach O; Niquet YM; Fröberg L; Mårtensson T; Samuelson L
    Nano Lett; 2007 Sep; 7(9):2596-601. PubMed ID: 17722944
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Interplay between crystal phase purity and radial growth in InP nanowires.
    Poole PJ; Dalacu D; Wu X; Lapointe J; Mnaymneh K
    Nanotechnology; 2012 Sep; 23(38):385205. PubMed ID: 22948129
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.
    Sormunen J; Riikonen J; Mattila M; Tiilikainen J; Sopanen M; Lipsanen H
    Nano Lett; 2005 Aug; 5(8):1541-3. PubMed ID: 16089485
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrostatic spin control in InAs/InP nanowire quantum dots.
    Romeo L; Roddaro S; Pitanti A; Ercolani D; Sorba L; Beltram F
    Nano Lett; 2012 Sep; 12(9):4490-4. PubMed ID: 22849393
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A; Haddara YM; Lapierre RR
    Nanotechnology; 2010 Apr; 21(16):165601. PubMed ID: 20348594
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots.
    Roddaro S; Pescaglini A; Ercolani D; Sorba L; Beltram F
    Nano Lett; 2011 Apr; 11(4):1695-9. PubMed ID: 21446718
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Scanned probe imaging of quantum dots inside InAs nanowires.
    Bleszynski AC; Zwanenburg FA; Westervelt RM; Roest AL; Bakkers EP; Kouwenhoven LP
    Nano Lett; 2007 Sep; 7(9):2559-62. PubMed ID: 17691848
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Bidirectional growth of indium phosphide nanowires.
    Ikejiri K; Ishizaka F; Tomioka K; Fukui T
    Nano Lett; 2012 Sep; 12(9):4770-4. PubMed ID: 22888965
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y; Joyce HJ; Gao Q; Tan HH; Jagadish C; Paladugu M; Zou J; Suvorova AA
    Nano Lett; 2006 Apr; 6(4):599-604. PubMed ID: 16608251
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.
    Wang X; Wang ZM; Liang B; Salamo GJ; Shih CK
    Nano Lett; 2006 Sep; 6(9):1847-51. PubMed ID: 16967989
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M; Zou J; Guo YN; Auchterlonie GJ; Joyce HJ; Gao Q; Tan HH; Jagadish C; Kim Y
    Small; 2007 Nov; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract]   [Full Text] [Related]  

  • 14. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X; Xiong Q; Nam S; Qian F; Li Y; Lieber CM
    Nano Lett; 2007 Oct; 7(10):3214-8. PubMed ID: 17867718
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Size control of InP nanowires by
    Sasaki M; Akamatsu T; Tomioka K; Motohisa J
    Nanotechnology; 2024 Feb; 35(19):. PubMed ID: 38306695
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
    Göransson DJO; Borgström MT; Huang YQ; Messing ME; Hessman D; Buyanova IA; Chen WM; Xu HQ
    Nano Lett; 2019 Apr; 19(4):2674-2681. PubMed ID: 30908918
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H; Popovitz-Biro R; Kretinin A; Heiblum M
    Nano Lett; 2009 Jan; 9(1):215-9. PubMed ID: 19093840
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Extreme nonlinearities in InAs/InP nanowire gain media: the two-photon induced laser.
    Capua A; Karni O; Eisenstein G; Reithmaier JP; Yvind K
    Opt Express; 2012 Mar; 20(6):5987-92. PubMed ID: 22418475
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
    Fasth C; Fuhrer A; Björk MT; Samuelson L
    Nano Lett; 2005 Jul; 5(7):1487-90. PubMed ID: 16178262
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electron trapping in InP nanowire FETs with stacking faults.
    Wallentin J; Ek M; Wallenberg LR; Samuelson L; Borgström MT
    Nano Lett; 2012 Jan; 12(1):151-5. PubMed ID: 22149329
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.