These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
162 related articles for article (PubMed ID: 22702396)
41. How does graphene grow? Easy access to well-ordered graphene films. Müller F; Sachdev H; Hüfner S; Pollard AJ; Perkins EW; Russell JC; Beton PH; Gsell S; Fischer M; Schreck M; Stritzker B Small; 2009 Oct; 5(20):2291-6. PubMed ID: 19565616 [TBL] [Abstract][Full Text] [Related]
42. Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation. Wang L; Wang Q; Huang J; Li WQ; Chen GH; Yang Y Phys Chem Chem Phys; 2017 Oct; 19(39):26765-26775. PubMed ID: 28948251 [TBL] [Abstract][Full Text] [Related]
43. Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene. Bae SH; Zhou X; Kim S; Lee YS; Cruz SS; Kim Y; Hannon JB; Yang Y; Sadana DK; Ross FM; Park H; Kim J Proc Natl Acad Sci U S A; 2017 Apr; 114(16):4082-4086. PubMed ID: 28373575 [TBL] [Abstract][Full Text] [Related]
44. Graphene/3C-SiC Hybrid Nanolaminate. Zhuang H; Yang B; Heuser S; Huang N; Fu H; Jiang X ACS Appl Mater Interfaces; 2015 Dec; 7(51):28508-17. PubMed ID: 26650041 [TBL] [Abstract][Full Text] [Related]
45. Self-regulating homogenous growth of high-quality graphene on Co-Cu composite substrate for layer control. Lin T; Huang F; Wan D; Bi H; Xie X; Jiang M Nanoscale; 2013 Jul; 5(13):5847-53. PubMed ID: 23695591 [TBL] [Abstract][Full Text] [Related]
46. Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer. Kim M; Hwang J; Lepak LA; Lee JW; Spencer MG; Tiwari S Nanotechnology; 2012 Aug; 23(33):335202. PubMed ID: 22842470 [TBL] [Abstract][Full Text] [Related]
47. Layer-by-layer assembly and UV photoreduction of graphene-polyoxometalate composite films for electronics. Li H; Pang S; Wu S; Feng X; Müllen K; Bubeck C J Am Chem Soc; 2011 Jun; 133(24):9423-9. PubMed ID: 21574632 [TBL] [Abstract][Full Text] [Related]
48. Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene. Pierucci D; Sediri H; Hajlaoui M; Girard JC; Brumme T; Calandra M; Velez-Fort E; Patriarche G; Silly MG; Ferro G; Soulière V; Marangolo M; Sirotti F; Mauri F; Ouerghi A ACS Nano; 2015 May; 9(5):5432-9. PubMed ID: 25893537 [TBL] [Abstract][Full Text] [Related]
49. Epitaxial chemical vapor deposition growth of single-layer graphene over cobalt film crystallized on sapphire. Ago H; Ito Y; Mizuta N; Yoshida K; Hu B; Orofeo CM; Tsuji M; Ikeda K; Mizuno S ACS Nano; 2010 Dec; 4(12):7407-14. PubMed ID: 21105741 [TBL] [Abstract][Full Text] [Related]
50. Bottom-up growth of epitaxial graphene on 6H-SiC(0001). Huang H; Chen W; Chen S; Wee AT ACS Nano; 2008 Dec; 2(12):2513-8. PubMed ID: 19206286 [TBL] [Abstract][Full Text] [Related]
51. Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene. Clark KW; Zhang XG; Vlassiouk IV; He G; Feenstra RM; Li AP ACS Nano; 2013 Sep; 7(9):7956-66. PubMed ID: 23952068 [TBL] [Abstract][Full Text] [Related]
52. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode. Ramesh P; Itkis ME; Bekyarova E; Wang F; Niyogi S; Chi X; Berger C; de Heer W; Haddon RC J Am Chem Soc; 2010 Oct; 132(41):14429-36. PubMed ID: 20873843 [TBL] [Abstract][Full Text] [Related]
53. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide. de Heer WA; Berger C; Ruan M; Sprinkle M; Li X; Hu Y; Zhang B; Hankinson J; Conrad E Proc Natl Acad Sci U S A; 2011 Oct; 108(41):16900-5. PubMed ID: 21960446 [TBL] [Abstract][Full Text] [Related]
54. Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage. Amjadipour M; MacLeod J; Lipton-Duffin J; Iacopi F; Motta N Nanotechnology; 2017 Aug; 28(34):345602. PubMed ID: 28548043 [TBL] [Abstract][Full Text] [Related]
55. Control of rotation angles of multilayer graphene on SiC (0001‾) by substrate off-direction and angle. Sakakibara R; Bao J; Hayashi N; Ito T; Hibino H; Norimatsu W J Phys Condens Matter; 2023 Jun; 35(38):. PubMed ID: 37321249 [TBL] [Abstract][Full Text] [Related]
56. Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure. Landois P; Wang T; Nachawaty A; Bayle M; Decams JM; Desrat W; Zahab AA; Jouault B; Paillet M; Contreras S Phys Chem Chem Phys; 2017 Jun; 19(24):15833-15841. PubMed ID: 28585655 [TBL] [Abstract][Full Text] [Related]
57. Surface-energy engineering of graphene. Shin YJ; Wang Y; Huang H; Kalon G; Wee AT; Shen Z; Bhatia CS; Yang H Langmuir; 2010 Mar; 26(6):3798-802. PubMed ID: 20158275 [TBL] [Abstract][Full Text] [Related]
58. Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates. Chatterjee A; Kruskopf M; Wundrack S; Hinze P; Pierz K; Stosch R; Scherer H ACS Appl Electron Mater; 2022 Nov; 4(11):5317-5325. PubMed ID: 36439398 [TBL] [Abstract][Full Text] [Related]
59. Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma. Jin S; Zong J; Chen W; Tian Q; Qiu X; Liu G; Zheng H; Xi X; Gao L; Wang C; Zhang Y Nanomaterials (Basel); 2021 Nov; 11(12):. PubMed ID: 34947567 [TBL] [Abstract][Full Text] [Related]
60. Real-time microscopy of graphene growth on epitaxial metal films: role of template thickness and strain. Sutter P; Ciobanu CV; Sutter E Small; 2012 Jul; 8(14):2250-7. PubMed ID: 22517630 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]