These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
212 related articles for article (PubMed ID: 22714204)
21. Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings. Bell DJ; Dong L; Nelson BJ; Golling M; Zhang L; Grützmacher D Nano Lett; 2006 Apr; 6(4):725-9. PubMed ID: 16608272 [TBL] [Abstract][Full Text] [Related]
22. Large area photoconductive terahertz emitter for 1.55 μm excitation based on an InGaAs heterostructure. Mittendorff M; Xu M; Dietz RJ; Künzel H; Sartorius B; Schneider H; Helm M; Winnerl S Nanotechnology; 2013 May; 24(21):214007. PubMed ID: 23619031 [TBL] [Abstract][Full Text] [Related]
23. Simultaneous integration of different nanowires on single textured Si (100) substrates. Rieger T; Rosenbach D; Mussler G; Schäpers T; Grützmacher D; Lepsa MI Nano Lett; 2015 Mar; 15(3):1979-86. PubMed ID: 25650521 [TBL] [Abstract][Full Text] [Related]
25. Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement. Hormozi Nezhad MR; Aizawa M; Porter LA; Ribbe AE; Buriak JM Small; 2005 Nov; 1(11):1076-81. PubMed ID: 17193399 [No Abstract] [Full Text] [Related]
26. Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression. Chen S; Yoshita M; Ito T; Mochizuki T; Akiyama H; Yokoyama H Opt Express; 2013 Mar; 21(6):7570-6. PubMed ID: 23546139 [TBL] [Abstract][Full Text] [Related]
27. Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes. Lu Z; Sun W; Zhou Q; Campbell J; Jiang X; Itzler MA Opt Express; 2013 Jul; 21(14):16716-21. PubMed ID: 23938523 [TBL] [Abstract][Full Text] [Related]
28. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Kumar A; Lee SY; Yadav S; Tan KH; Loke WK; Dong Y; Lee KH; Wicaksono S; Liang G; Yoon SF; Antoniadis D; Yeo YC; Gong X Opt Express; 2017 Dec; 25(25):31853-31862. PubMed ID: 29245855 [TBL] [Abstract][Full Text] [Related]
29. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology. Sun MC; Kim G; Kim SW; Kim HW; Kim H; Lee JH; Shin H; Park BG J Nanosci Nanotechnol; 2012 Jul; 12(7):5313-7. PubMed ID: 22966563 [TBL] [Abstract][Full Text] [Related]
31. Fabrication of poly-silicon nano-wire transistors on plastic substrates. Park C; Lee S; Choi M; Kang M; Jung Y; Hwang S; Ahn D; Lee J; Song C J Nanosci Nanotechnol; 2007 Nov; 7(11):4150-3. PubMed ID: 18047139 [TBL] [Abstract][Full Text] [Related]
32. Multi-project wafers for flexible thin-film electronics by independent foundries. Çeliker H; Dehaene W; Myny K Nature; 2024 May; 629(8011):335-340. PubMed ID: 38658759 [TBL] [Abstract][Full Text] [Related]
33. Few electron limit of n-type metal oxide semiconductor single electron transistors. Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn J; Tettamanzi GC; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M Nanotechnology; 2012 Jun; 23(21):215204. PubMed ID: 22552118 [TBL] [Abstract][Full Text] [Related]
34. Optically modulated internal strain in InGaN quantum dots grown on SiN(x) nano masks. Chang HJ; Chen TT; Huang LL; Chen YF; Tsai JY; Wang TC; Kuo HC Opt Express; 2008 Jan; 16(2):920-6. PubMed ID: 18542166 [TBL] [Abstract][Full Text] [Related]
35. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate. Jiang Q; Tang M; Chen S; Wu J; Seeds A; Liu H Opt Express; 2014 Sep; 22(19):23242-8. PubMed ID: 25321793 [TBL] [Abstract][Full Text] [Related]
36. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch. Cong GW; Matsukawa T; Chiba T; Tadokoro H; Yanagihara M; Ohno M; Kawashima H; Kuwatsuka H; Igarashi Y; Masahara M; Ishikawa H Opt Express; 2013 Mar; 21(6):6889-94. PubMed ID: 23546071 [TBL] [Abstract][Full Text] [Related]
37. Room-temperature electron spin amplifier based on Ga(In)NAs alloys. Puttisong Y; Buyanova IA; Ptak AJ; Tu CW; Geelhaar L; Riechert H; Chen WM Adv Mater; 2013 Feb; 25(5):738-42. PubMed ID: 23108727 [TBL] [Abstract][Full Text] [Related]
38. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Natrella M; Rouvalis E; Liu CP; Liu H; Renaud CC; Seeds AJ Opt Express; 2012 Aug; 20(17):19279-88. PubMed ID: 23038569 [TBL] [Abstract][Full Text] [Related]
39. GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser. Kulkarni OP; Islam MN; Terry FL Opt Express; 2011 Feb; 19(5):4076-84. PubMed ID: 21369236 [TBL] [Abstract][Full Text] [Related]
40. Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI. Mechet P; Raineri F; Bazin A; Halioua Y; Spuesens T; Karle TJ; Regreny P; Monnier P; Van Thourhout D; Sagnes I; Raj R; Roelkens G; Morthier G Opt Express; 2013 May; 21(9):10622-31. PubMed ID: 23669918 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]