229 related articles for article (PubMed ID: 22753503)
1. High-frequency self-aligned graphene transistors with transferred gate stacks.
Cheng R; Bai J; Liao L; Zhou H; Chen Y; Liu L; Lin YC; Jiang S; Huang Y; Duan X
Proc Natl Acad Sci U S A; 2012 Jul; 109(29):11588-92. PubMed ID: 22753503
[TBL] [Abstract][Full Text] [Related]
2. Scalable fabrication of self-aligned graphene transistors and circuits on glass.
Liao L; Bai J; Cheng R; Zhou H; Liu L; Liu Y; Huang Y; Duan X
Nano Lett; 2012 Jun; 12(6):2653-7. PubMed ID: 21648419
[TBL] [Abstract][Full Text] [Related]
3. High-speed graphene transistors with a self-aligned nanowire gate.
Liao L; Lin YC; Bao M; Cheng R; Bai J; Liu Y; Qu Y; Wang KL; Huang Y; Duan X
Nature; 2010 Sep; 467(7313):305-8. PubMed ID: 20811365
[TBL] [Abstract][Full Text] [Related]
4. Self-aligned fabrication of graphene RF transistors with T-shaped gate.
Badmaev A; Che Y; Li Z; Wang C; Zhou C
ACS Nano; 2012 Apr; 6(4):3371-6. PubMed ID: 22404336
[TBL] [Abstract][Full Text] [Related]
5. 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.
Wu Y; Zou X; Sun M; Cao Z; Wang X; Huo S; Zhou J; Yang Y; Yu X; Kong Y; Yu G; Liao L; Chen T
ACS Appl Mater Interfaces; 2016 Oct; 8(39):25645-25649. PubMed ID: 27640732
[TBL] [Abstract][Full Text] [Related]
6. Top-gated chemical vapor deposition grown graphene transistors with current saturation.
Bai J; Liao L; Zhou H; Cheng R; Liu L; Huang Y; Duan X
Nano Lett; 2011 Jun; 11(6):2555-9. PubMed ID: 21548551
[TBL] [Abstract][Full Text] [Related]
7. Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene.
Yeh CH; Teng PY; Chiu YC; Hsiao WT; Hsu SSH; Chiu PW
ACS Appl Mater Interfaces; 2019 Feb; 11(6):6336-6343. PubMed ID: 30652465
[TBL] [Abstract][Full Text] [Related]
8. High-frequency, scaled graphene transistors on diamond-like carbon.
Wu Y; Lin YM; Bol AA; Jenkins KA; Xia F; Farmer DB; Zhu Y; Avouris P
Nature; 2011 Apr; 472(7341):74-8. PubMed ID: 21475197
[TBL] [Abstract][Full Text] [Related]
9. Sub-100 nm channel length graphene transistors.
Liao L; Bai J; Cheng R; Lin YC; Jiang S; Qu Y; Huang Y; Duan X
Nano Lett; 2010 Oct; 10(10):3952-6. PubMed ID: 20815334
[TBL] [Abstract][Full Text] [Related]
10. Operation of graphene transistors at gigahertz frequencies.
Lin YM; Jenkins KA; Valdes-Garcia A; Small JP; Farmer DB; Avouris P
Nano Lett; 2009 Jan; 9(1):422-6. PubMed ID: 19099364
[TBL] [Abstract][Full Text] [Related]
11. A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors.
Kang SH; Hwang WS; Lin Z; Kwon SH; Hong SW
Nano Lett; 2015 Dec; 15(12):7913-20. PubMed ID: 26569342
[TBL] [Abstract][Full Text] [Related]
12. High-performance and high-sensitivity applications of graphene transistors with self-assembled monolayers.
Yeh CH; Kumar V; Moyano DR; Wen SH; Parashar V; Hsiao SH; Srivastava A; Saxena PS; Huang KP; Chang CC; Chiu PW
Biosens Bioelectron; 2016 Mar; 77():1008-15. PubMed ID: 26547427
[TBL] [Abstract][Full Text] [Related]
13. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
Smith C; Qaisi R; Liu Z; Yu Q; Hussain MM
ACS Nano; 2013 Jul; 7(7):5818-23. PubMed ID: 23777434
[TBL] [Abstract][Full Text] [Related]
14. Flexible gigahertz transistors derived from solution-based single-layer graphene.
Sire C; Ardiaca F; Lepilliet S; Seo JW; Hersam MC; Dambrine G; Happy H; Derycke V
Nano Lett; 2012 Mar; 12(3):1184-8. PubMed ID: 22283460
[TBL] [Abstract][Full Text] [Related]
15. Graphene: an emerging electronic material.
Weiss NO; Zhou H; Liao L; Liu Y; Jiang S; Huang Y; Duan X
Adv Mater; 2012 Nov; 24(43):5782-825. PubMed ID: 22930422
[TBL] [Abstract][Full Text] [Related]
16. Synthesis of monolithic graphene-graphite integrated electronics.
Park JU; Nam S; Lee MS; Lieber CM
Nat Mater; 2011 Nov; 11(2):120-5. PubMed ID: 22101813
[TBL] [Abstract][Full Text] [Related]
17. Transport characteristics of multichannel transistors made from densely aligned sub-10 nm half-pitch graphene nanoribbons.
Liang X; Wi S
ACS Nano; 2012 Nov; 6(11):9700-10. PubMed ID: 23078122
[TBL] [Abstract][Full Text] [Related]
18. Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors.
Gao X; Yu C; He Z; Song X; Liu Q; Zhou C; Guo J; Cai S; Feng Z
Nanoscale Adv; 2019 Mar; 1(3):1130-1135. PubMed ID: 36133206
[TBL] [Abstract][Full Text] [Related]
19. Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.
Zheng J; Wang L; Quhe R; Liu Q; Li H; Yu D; Mei WN; Shi J; Gao Z; Lu J
Sci Rep; 2013; 3():1314. PubMed ID: 23419782
[TBL] [Abstract][Full Text] [Related]
20. State-of-the-art graphene high-frequency electronics.
Wu Y; Jenkins KA; Valdes-Garcia A; Farmer DB; Zhu Y; Bol AA; Dimitrakopoulos C; Zhu W; Xia F; Avouris P; Lin YM
Nano Lett; 2012 Jun; 12(6):3062-7. PubMed ID: 22563820
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]