These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

143 related articles for article (PubMed ID: 22772186)

  • 1. Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport.
    Cho S; Park BG; Yang C; Cheung S; Yoon E; Kamins TI; Yoo SJ; Harris JS
    Opt Express; 2012 Jul; 20(14):14921-7. PubMed ID: 22772186
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities.
    Xu X; Tsuboi T; Chiba T; Usami N; Maruizumi T; Shiraki Y
    Opt Express; 2012 Jun; 20(13):14714-21. PubMed ID: 22714532
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Room-temperature electroluminescence from Si microdisks with Ge quantum dots.
    Xia J; Takeda Y; Usami N; Maruizumi T; Shiraki Y
    Opt Express; 2010 Jun; 18(13):13945-50. PubMed ID: 20588527
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.
    Liu Z; Hu W; Su S; Li C; Li C; Xue C; Li Y; Zuo Y; Cheng B; Wang Q
    Opt Express; 2012 Sep; 20(20):22327-33. PubMed ID: 23037381
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Enhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor.
    Tani K; Oda K; Deura M; Ido T
    Opt Express; 2021 Feb; 29(3):3584-3595. PubMed ID: 33770955
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.
    Cheng SL; Lu J; Shambat G; Yu HY; Saraswat K; Vuckovic J; Nishi Y
    Opt Express; 2009 Jun; 17(12):10019-24. PubMed ID: 19506652
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction.
    Yang HY; Yu SF; Liang HK; Chen TP; Gao J; Wu T
    Opt Express; 2010 Jul; 18(15):15585-90. PubMed ID: 20720938
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Design and numerical analysis of surface plasmon-enhanced fin Ge-Si light-emitting diode.
    Jeong I; Kwon J; Kim C; Park YJ
    Opt Express; 2014 Mar; 22(5):5927-36. PubMed ID: 24663930
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.
    Sun X; Liu J; Kimerling LC; Michel J
    Opt Lett; 2009 Apr; 34(8):1198-200. PubMed ID: 19370116
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An efficient room-temperature silicon-based light-emitting diode.
    Ng WL; Lourenço MA; Gwilliam RM; Ledain S; Shao G; Homewood KP
    Nature; 2001 Mar; 410(6825):192-4. PubMed ID: 11242075
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Optical gain in single tensile-strained germanium photonic wire.
    de Kersauson M; El Kurdi M; David S; Checoury X; Fishman G; Sauvage S; Jakomin R; Beaudoin G; Sagnes I; Boucaud P
    Opt Express; 2011 Sep; 19(19):17925-34. PubMed ID: 21935156
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Ultraviolet electroluminescence from randomly assembled n-SnO(2) nanowiresp-GaN:Mg heterojunction.
    Yang HY; Yu SF; Liang HK; Lau SP; Pramana SS; Ferraris C; Cheng CW; Fan HJ
    ACS Appl Mater Interfaces; 2010 Apr; 2(4):1191-4. PubMed ID: 20423138
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals.
    Nataraj L; Xu F; Cloutier SG
    Opt Express; 2010 Mar; 18(7):7085-91. PubMed ID: 20389729
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Enhanced light emission of germanium light-emitting-diode on 150 mm germanium-on-insulator (GOI).
    Wu S; Wang Z; Zhang L; Chen Q; Wen S; Lee KH; Bao S; Fan W; Seng TC; Luo JW
    Opt Express; 2023 May; 31(11):17921-17929. PubMed ID: 37381513
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods.
    Rout CS; Rao CN
    Nanotechnology; 2008 Jul; 19(28):285203. PubMed ID: 21828727
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.
    Clavel M; Saladukha D; Goley PS; Ochalski TJ; Murphy-Armando F; Bodnar RJ; Hudait MK
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26470-81. PubMed ID: 26561963
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes.
    Ham MH; Yoon S; Park Y; Bian L; Ramsteiner M; Myoung JM
    J Phys Condens Matter; 2006 Aug; 18(32):7703-8. PubMed ID: 21690881
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells.
    Claussen SA; Tasyurek E; Roth JE; Miller DA
    Opt Express; 2010 Dec; 18(25):25596-607. PubMed ID: 21164905
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy.
    Kwak DW; Park CJ; Lee YH; Kim WS; Cho HY
    Nanotechnology; 2009 Feb; 20(5):055201. PubMed ID: 19417338
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ge-on-Si laser operating at room temperature.
    Liu J; Sun X; Camacho-Aguilera R; Kimerling LC; Michel J
    Opt Lett; 2010 Mar; 35(5):679-81. PubMed ID: 20195317
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.