564 related articles for article (PubMed ID: 22790779)
1. Emerging memories: resistive switching mechanisms and current status.
Jeong DS; Thomas R; Katiyar RS; Scott JF; Kohlstedt H; Petraru A; Hwang CS
Rep Prog Phys; 2012 Jul; 75(7):076502. PubMed ID: 22790779
[TBL] [Abstract][Full Text] [Related]
2. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.
Magyari-Köpe B; Tendulkar M; Park SG; Lee HD; Nishi Y
Nanotechnology; 2011 Jun; 22(25):254029. PubMed ID: 21572196
[TBL] [Abstract][Full Text] [Related]
3. Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.
Tang G; Zeng F; Chen C; Liu H; Gao S; Song C; Lin Y; Chen G; Pan F
Nanoscale; 2013 Jan; 5(1):422-8. PubMed ID: 23187889
[TBL] [Abstract][Full Text] [Related]
4. Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.
Carlos E; Branquinho R; Martins R; Kiazadeh A; Fortunato E
Adv Mater; 2021 Feb; 33(7):e2004328. PubMed ID: 33314334
[TBL] [Abstract][Full Text] [Related]
5. Photo-stimulated resistive switching of ZnO nanorods.
Park J; Lee S; Yong K
Nanotechnology; 2012 Sep; 23(38):385707. PubMed ID: 22948083
[TBL] [Abstract][Full Text] [Related]
6. Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.
Lee C; Kim I; Choi W; Shin H; Cho J
Langmuir; 2009 Apr; 25(8):4274-8. PubMed ID: 19317425
[TBL] [Abstract][Full Text] [Related]
7. Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films.
Pantel D; Goetze S; Hesse D; Alexe M
ACS Nano; 2011 Jul; 5(7):6032-8. PubMed ID: 21682334
[TBL] [Abstract][Full Text] [Related]
8. Graphene oxide thin films for flexible nonvolatile memory applications.
Jeong HY; Kim JY; Kim JW; Hwang JO; Kim JE; Lee JY; Yoon TH; Cho BJ; Kim SO; Ruoff RS; Choi SY
Nano Lett; 2010 Nov; 10(11):4381-6. PubMed ID: 20919689
[TBL] [Abstract][Full Text] [Related]
9. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications.
Hoffman J; Hong X; Ahn CH
Nanotechnology; 2011 Jun; 22(25):254014. PubMed ID: 21572192
[TBL] [Abstract][Full Text] [Related]
10. Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.
Gao S; Zeng F; Wang M; Wang G; Song C; Pan F
Phys Chem Chem Phys; 2015 May; 17(19):12849-56. PubMed ID: 25907552
[TBL] [Abstract][Full Text] [Related]
11. Decade of 2D-materials-based RRAM devices: a review.
Rehman MM; Rehman HMMU; Gul JZ; Kim WY; Karimov KS; Ahmed N
Sci Technol Adv Mater; 2020; 21(1):147-186. PubMed ID: 32284767
[TBL] [Abstract][Full Text] [Related]
12. Random telegraph noise and resistance switching analysis of oxide based resistive memory.
Choi S; Yang Y; Lu W
Nanoscale; 2014 Jan; 6(1):400-4. PubMed ID: 24202235
[TBL] [Abstract][Full Text] [Related]
13. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
Venugopal G; Kim SJ
J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
[TBL] [Abstract][Full Text] [Related]
14. Resistive switching effect in titanium oxides.
Tang Z; Chi Y; Fang L; Liu R; Yi X
J Nanosci Nanotechnol; 2014 Feb; 14(2):1494-507. PubMed ID: 24749437
[TBL] [Abstract][Full Text] [Related]
15. Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.
Melo AH; Macêdo MA
PLoS One; 2016; 11(12):e0168515. PubMed ID: 27992513
[TBL] [Abstract][Full Text] [Related]
16. Resistive switching in nanogap systems on SiO2 substrates.
Yao J; Zhong L; Zhang Z; He T; Jin Z; Wheeler PJ; Natelson D; Tour JM
Small; 2009 Dec; 5(24):2910-5. PubMed ID: 19787676
[TBL] [Abstract][Full Text] [Related]
17. Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
Tappertzhofen S; Valov I; Tsuruoka T; Hasegawa T; Waser R; Aono M
ACS Nano; 2013 Jul; 7(7):6396-402. PubMed ID: 23786236
[TBL] [Abstract][Full Text] [Related]
18. The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices.
Lee MC; Wong HY
J Nanosci Nanotechnol; 2014 Feb; 14(2):1508-20. PubMed ID: 24749438
[TBL] [Abstract][Full Text] [Related]
19. The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.
Rahaman SZ; Lin YD; Lee HY; Chen YS; Chen PS; Chen WS; Hsu CH; Tsai KH; Tsai MJ; Wang PH
Langmuir; 2017 May; 33(19):4654-4665. PubMed ID: 28420238
[TBL] [Abstract][Full Text] [Related]
20. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
Niu G; Kim HD; Roelofs R; Perez E; Schubert MA; Zaumseil P; Costina I; Wenger C
Sci Rep; 2016 Jun; 6():28155. PubMed ID: 27312225
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]