190 related articles for article (PubMed ID: 22849118)
1. Optical performance of extreme ultraviolet lithography mask with an indium tin oxide absorber.
Kang HY; Park S; Hwangbo CK; Seo HS; Kim SS; Cho HK
J Nanosci Nanotechnol; 2012 Apr; 12(4):3330-3. PubMed ID: 22849118
[TBL] [Abstract][Full Text] [Related]
2. Binary mask designs with single- and double-layer absorber stacks for extreme ultraviolet lithography and actinic inspection.
Park S; Lim JD; Peranantham P; Kang HY; Hwangbo CK; Lee S; Kim SS
Appl Opt; 2014 Feb; 53(4):A42-7. PubMed ID: 24514247
[TBL] [Abstract][Full Text] [Related]
3. Refined extreme ultraviolet mask stack model.
Makhotkin IA; Wu M; Soltwisch V; Scholze F; Philipsen V
J Opt Soc Am A Opt Image Sci Vis; 2021 Apr; 38(4):498-503. PubMed ID: 33798178
[TBL] [Abstract][Full Text] [Related]
4. Highly selective etching of SnO2 absorber in binary mask structure for extreme ultra-violet lithography.
Lee SJ; Jung CY; Park SJ; Hwangbo CK; Seo HS; Kim SS; Lee NE
J Nanosci Nanotechnol; 2012 Apr; 12(4):3334-40. PubMed ID: 22849119
[TBL] [Abstract][Full Text] [Related]
5. Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography.
Hong S; Kim JS; Lee JU; Lee SM; Kim JH; Ahn J
J Nanosci Nanotechnol; 2015 Nov; 15(11):8652-5. PubMed ID: 26726569
[TBL] [Abstract][Full Text] [Related]
6. Fast mask model for extreme ultraviolet lithography with a slanted absorber sidewall.
Zhang Z; Li S; Wang X; Cheng W
Appl Opt; 2021 Jul; 60(20):5776-5782. PubMed ID: 34263796
[TBL] [Abstract][Full Text] [Related]
7. Thin absorber extreme ultraviolet photomask based on Ni-TaN nanocomposite material.
Hay D; Bagge P; Khaw I; Sun L; Wood O; Chen Y; Kim RH; Qi ZJ; Shi Z
Opt Lett; 2016 Aug; 41(16):3791-4. PubMed ID: 27519090
[TBL] [Abstract][Full Text] [Related]
8. Solution-Gated Ultrathin Channel Indium Tin Oxide-Based Field-Effect Transistor Fabricated by a One-Step Procedure that Enables High-Performance Ion Sensing and Biosensing.
Sakata T; Nishitani S; Saito A; Fukasawa Y
ACS Appl Mater Interfaces; 2021 Aug; 13(32):38569-38578. PubMed ID: 34351737
[TBL] [Abstract][Full Text] [Related]
9. Fast rigorous mask model for extreme ultraviolet lithography.
Zhang Z; Li S; Wang X; Cheng W
Appl Opt; 2020 Aug; 59(24):7376-7389. PubMed ID: 32902506
[TBL] [Abstract][Full Text] [Related]
10. Broadband infrared metamaterial absorber with visible transparency using ITO as ground plane.
Dayal G; Ramakrishna SA
Opt Express; 2014 Jun; 22(12):15104-10. PubMed ID: 24977603
[TBL] [Abstract][Full Text] [Related]
11. Full field analysis of critical dimension uniformity due to focal variation for contact features in extreme ultraviolet lithography.
Kuo HF; Frederick
J Nanosci Nanotechnol; 2014 Mar; 14(3):2630-4. PubMed ID: 24745274
[TBL] [Abstract][Full Text] [Related]
12. Indium tin oxide subwavelength nanostructures with surface antireflection and superhydrophilicity for high-efficiency Si-based thin film solar cells.
Leem JW; Yu JS
Opt Express; 2012 May; 20(10):A431-40. PubMed ID: 22712092
[TBL] [Abstract][Full Text] [Related]
13. Mask structure optimization for beyond EUV lithography.
Li Z; Dong L; Xu M; Wei Y
Opt Lett; 2024 Jul; 49(13):3604-3607. PubMed ID: 38950220
[TBL] [Abstract][Full Text] [Related]
14. Effect of Thickness on the Optical and Electrical Properties of ITO/Au/ITO Sandwich Structures.
Lam KK; Ng SM; Wong HF; Fei L; Liu Y; Chan KH; Ye H; Leung CW; Mak CL
ACS Appl Mater Interfaces; 2020 Mar; 12(11):13437-13446. PubMed ID: 32088951
[TBL] [Abstract][Full Text] [Related]
15. Optical constants and absorption properties of Te and TeO thin films in the 13-14 nm spectral range.
Rodríguez-de Marcos LV; Kalaiselvi SMP; Leong OB; Das PK; Breese MBH; Rusydi A
Opt Express; 2020 Apr; 28(9):12922-12935. PubMed ID: 32403778
[TBL] [Abstract][Full Text] [Related]
16. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.
Kim Y; Hibino K; Sugita N; Mitsuishi M
Appl Opt; 2015 Aug; 54(23):7135-41. PubMed ID: 26368388
[TBL] [Abstract][Full Text] [Related]
17. Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic-photonic circuits.
Olivier A; Avilés-Félix L; Chavent A; Álvaro-Goémez L; Rubio-Roy M; Auffret S; Vila L; Dieny B; Sousa RC; Prejbeanu IL
Nanotechnology; 2020 Jun; 31(42):425302. PubMed ID: 32531768
[TBL] [Abstract][Full Text] [Related]
18. Coherent scattering microscopy as an effective inspection tool for analyzing performance of phase shift mask.
Woo DG; Lee JU; Hong SC; Kim JS; Ahn J
Opt Express; 2016 May; 24(11):12055-62. PubMed ID: 27410126
[TBL] [Abstract][Full Text] [Related]
19. Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography.
Mirkarimi PB; Bajt S; Wall MA
Appl Opt; 2000 Apr; 39(10):1617-25. PubMed ID: 18345060
[TBL] [Abstract][Full Text] [Related]
20. Fabrication of a 100 × 100 mm
Nam KB; Hu Q; Yeo JH; Kim MJ; Yoo JB
Nanoscale Adv; 2022 Sep; 4(18):3824-3831. PubMed ID: 36133349
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
