These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

204 related articles for article (PubMed ID: 22940530)

  • 1. Effects of growth pressure on the structural and optical properties of multi quantum wells (MQWs) in blue LED.
    Jang DH; Gu GH; Lee BH; Park CG
    Ultramicroscopy; 2013 Apr; 127():114-8. PubMed ID: 22940530
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.
    Song H; Kim JS; Kim EK; Seo YG; Hwang SM
    Nanotechnology; 2010 Apr; 21(13):134026. PubMed ID: 20208099
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.
    Gu GH; Jang DH; Nam KB; Park CG
    Microsc Microanal; 2013 Aug; 19 Suppl 5():99-104. PubMed ID: 23920184
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes.
    Peng D; Tan C; Chen Z; Feng Z
    J Nanosci Nanotechnol; 2015 Jun; 15(6):4604-7. PubMed ID: 26369087
    [TBL] [Abstract][Full Text] [Related]  

  • 5. [Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes].
    Chen WH; Liao H; Hu XD; Li R; Jia QJ; Jin YH; Du WM; Yang ZJ; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2009 Jun; 29(6):1441-4. PubMed ID: 19810504
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.
    Jung BO; Bae SY; Lee S; Kim SY; Lee JY; Honda Y; Amano H
    Nanoscale Res Lett; 2016 Dec; 11(1):215. PubMed ID: 27102904
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
    Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
    Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.
    Kret S; Dłużewski P; Szczepańska A; Zak M; Czernecki R; Kryśko M; Leszczyński M; Maciejewski G
    Nanotechnology; 2007 Nov; 18(46):465707. PubMed ID: 21730494
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
    Tsai CL; Wu WC
    Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells.
    Zoellner MH; Chahine GA; Lahourcade L; Mounir C; Manganelli CL; Schülli TU; Schwarz UT; Zeisel R; Schroeder T
    ACS Appl Mater Interfaces; 2019 Jun; 11(25):22834-22839. PubMed ID: 31142109
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.
    Zhang F; Ikeda M; Zhang SM; Liu JP; Tian AQ; Wen PY; Cheng Y; Yang H
    Nanoscale Res Lett; 2016 Dec; 11(1):519. PubMed ID: 27885621
    [TBL] [Abstract][Full Text] [Related]  

  • 14. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
    Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields.
    Park H; Kim BJ; Kim J
    Opt Express; 2012 Nov; 20(23):25249-54. PubMed ID: 23187341
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition.
    Song J; Chang SP; Zhang C; Hsu TC; Han J
    ACS Appl Mater Interfaces; 2015 Jan; 7(1):273-8. PubMed ID: 25494953
    [TBL] [Abstract][Full Text] [Related]  

  • 17. White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands.
    Fang Z
    Nanotechnology; 2011 Aug; 22(31):315706. PubMed ID: 21730755
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells.
    Li X; Liu J; Su X; Huang S; Tian A; Zhou W; Jiang L; Ikeda M; Yang H
    Materials (Basel); 2021 Apr; 14(8):. PubMed ID: 33918874
    [TBL] [Abstract][Full Text] [Related]  

  • 19. White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.
    Song KM; Kim DH; Kim JM; Cho CY; Choi J; Kim K; Park J; Kim H
    Nanotechnology; 2017 Jun; 28(22):225703. PubMed ID: 28448276
    [TBL] [Abstract][Full Text] [Related]  

  • 20. One-step graphene coating of heteroepitaxial GaN films.
    Choi JK; Huh JH; Kim SD; Moon D; Yoon D; Joo K; Kwak J; Chu JH; Kim SY; Park K; Kim YW; Yoon E; Cheong H; Kwon SY
    Nanotechnology; 2012 Nov; 23(43):435603. PubMed ID: 23059535
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.