These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
170 related articles for article (PubMed ID: 22962735)
1. Improved performance of ZnO-based resistive memory by internal diffusion of Ag atoms. Peng CN; Wang CW; Huang JS; Chang WY; Wu WW; Chueh YL J Nanosci Nanotechnol; 2012 Aug; 12(8):6271-5. PubMed ID: 22962735 [TBL] [Abstract][Full Text] [Related]
2. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering. Zhao X; Li Y; Ai C; Wen D Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535 [TBL] [Abstract][Full Text] [Related]
3. TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices. Bejtka K; Milano G; Ricciardi C; Pirri CF; Porro S ACS Appl Mater Interfaces; 2020 Jul; 12(26):29451-29460. PubMed ID: 32508083 [TBL] [Abstract][Full Text] [Related]
4. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory. Zhao X; Song P; Gai H; Li Y; Ai C; Wen D Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957 [TBL] [Abstract][Full Text] [Related]
5. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode. Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090 [TBL] [Abstract][Full Text] [Related]
7. Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory. Wang J; Song Z; Xu K; Liu M J Nanosci Nanotechnol; 2010 Nov; 10(11):7088-91. PubMed ID: 21137871 [TBL] [Abstract][Full Text] [Related]
8. Resistive switching characteristics of ZnO nanowires. Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083 [TBL] [Abstract][Full Text] [Related]
9. Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High-Density VRRAM Arrays. Wu MC; Ting YH; Chen JY; Wu WW Adv Sci (Weinh); 2019 Dec; 6(24):1902363. PubMed ID: 31890465 [TBL] [Abstract][Full Text] [Related]
10. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate. Sun B; Zhang X; Zhou G; Yu T; Mao S; Zhu S; Zhao Y; Xia Y J Colloid Interface Sci; 2018 Jun; 520():19-24. PubMed ID: 29525500 [TBL] [Abstract][Full Text] [Related]
11. Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory. Lin CC; Chang YP J Nanosci Nanotechnol; 2012 Mar; 12(3):2437-41. PubMed ID: 22755070 [TBL] [Abstract][Full Text] [Related]
12. Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate. Huang CH; Huang JS; Lai CC; Huang HW; Lin SJ; Chueh YL ACS Appl Mater Interfaces; 2013 Jul; 5(13):6017-23. PubMed ID: 23705848 [TBL] [Abstract][Full Text] [Related]
13. Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application. Yang YC; Fan B; Zeng F; Pan F J Nanosci Nanotechnol; 2010 Nov; 10(11):7370-3. PubMed ID: 21137937 [TBL] [Abstract][Full Text] [Related]
14. Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching. Fra V; Beccaria M; Milano G; Guastella S; Bianco S; Porro S; Laurenti M; Stassi S; Ricciardi C Nanotechnology; 2020 Sep; 31(37):374001. PubMed ID: 32492668 [TBL] [Abstract][Full Text] [Related]
15. Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation. Peng CN; Wang CW; Chan TC; Chang WY; Wang YC; Tsai HW; Wu WW; Chen LJ; Chueh YL Nanoscale Res Lett; 2012 Oct; 7(1):559. PubMed ID: 23043767 [TBL] [Abstract][Full Text] [Related]
16. Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film. Yoo EJ; Kang SY; Shim EL; Yoon TS; Kang CJ; Choi YJ J Nanosci Nanotechnol; 2015 Nov; 15(11):8622-6. PubMed ID: 26726563 [TBL] [Abstract][Full Text] [Related]
17. Switching-behavior improvement in HfO Zhang W; Lei J; Dai Y; Zhang X; Kang L; Peng B; Hu F Nanotechnology; 2022 Apr; 33(25):. PubMed ID: 35294938 [TBL] [Abstract][Full Text] [Related]
18. Compliance current controlled volatile and nonvolatile memory in Ag/CoFe Munjal S; Khare N Nanotechnology; 2021 Apr; 32(18):185204. PubMed ID: 33470980 [TBL] [Abstract][Full Text] [Related]