102 related articles for article (PubMed ID: 22966569)
1. Novel palladium germanide schottky contact for high performance schottky barrier ge MOSFETs and characterization of its leakage current mechanism.
Oh SK; Shin HS; Kang MH; Lee GW; Lee HD
J Nanosci Nanotechnol; 2012 Jul; 12(7):5347-50. PubMed ID: 22966569
[TBL] [Abstract][Full Text] [Related]
2. Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga
Hu Z; Feng Q; Feng Z; Cai Y; Shen Y; Yan G; Lu X; Zhang C; Zhou H; Zhang J; Hao Y
Nanoscale Res Lett; 2019 Jan; 14(1):2. PubMed ID: 30607511
[TBL] [Abstract][Full Text] [Related]
3. Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN.
Lee M; Ahn CW; Vu TKO; Lee HU; Jeong Y; Hahm MG; Kim EK; Park S
Nanomaterials (Basel); 2020 Feb; 10(2):. PubMed ID: 32050595
[TBL] [Abstract][Full Text] [Related]
4. Ferromagnetic germanide in Ge nanowire transistors for spintronics application.
Tang J; Wang CY; Hung MH; Jiang X; Chang LT; He L; Liu PH; Yang HJ; Tuan HY; Chen LJ; Wang KL
ACS Nano; 2012 Jun; 6(6):5710-7. PubMed ID: 22658951
[TBL] [Abstract][Full Text] [Related]
5. Scalability of Schottky barrier metal-oxide-semiconductor transistors.
Jang M
Nano Converg; 2016; 3(1):11. PubMed ID: 28191421
[TBL] [Abstract][Full Text] [Related]
6. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.
Kumar A; Kashid R; Ghosh A; Kumar V; Singh R
ACS Appl Mater Interfaces; 2016 Mar; 8(12):8213-23. PubMed ID: 26963627
[TBL] [Abstract][Full Text] [Related]
7. Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors.
Burchhart T; Lugstein A; Hyun YJ; Hochleitner G; Bertagnolli E
Nano Lett; 2009 Nov; 9(11):3739-42. PubMed ID: 19691284
[TBL] [Abstract][Full Text] [Related]
8. Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.
Jyothi I; Janardhanam V; Kang MS; Yun HJ; Lee J; Choi CJ
J Nanosci Nanotechnol; 2014 Nov; 14(11):8176-81. PubMed ID: 25958495
[TBL] [Abstract][Full Text] [Related]
9. Palladium/single-walled carbon nanotube back-to-back Schottky contact-based hydrogen sensors and their sensing mechanism.
Zhang M; Brooks LL; Chartuprayoon N; Bosze W; Choa YH; Myung NV
ACS Appl Mater Interfaces; 2014 Jan; 6(1):319-26. PubMed ID: 24328333
[TBL] [Abstract][Full Text] [Related]
10. Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.
Li H; Guo Y; Robertson J
Sci Rep; 2017 Nov; 7(1):16669. PubMed ID: 29192169
[TBL] [Abstract][Full Text] [Related]
11. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.
Fu C; Zhou X; Wang Y; Xu P; Xu M; Wu D; Luo J; Zhao C; Zhang SL
Materials (Basel); 2016 Apr; 9(5):. PubMed ID: 28773440
[TBL] [Abstract][Full Text] [Related]
12. Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of
Al-Ahmadi NA
Heliyon; 2020 Sep; 6(9):e04852. PubMed ID: 32995595
[TBL] [Abstract][Full Text] [Related]
13. In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode.
Son Y; Li J; Peterson RL
ACS Appl Mater Interfaces; 2016 Sep; 8(36):23801-9. PubMed ID: 27559750
[TBL] [Abstract][Full Text] [Related]
14. Electrical characterization of two analogous Schottky contacts produced from N-substituted 1,8-naphthalimide.
Karagöz E; Fiat Varol S; Sayın S; Merdan Z
Phys Chem Chem Phys; 2018 Dec; 20(48):30502-30513. PubMed ID: 30511079
[TBL] [Abstract][Full Text] [Related]
15. Characterization of Mn
Hutchins-Delgado TA; Addamane SJ; Lu P; Lu TM
Nanomaterials (Basel); 2024 Mar; 14(6):. PubMed ID: 38535687
[TBL] [Abstract][Full Text] [Related]
16. Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.
Yang WF; Lee SJ; Liang GC; Whang SJ; Kwong DL
Nanotechnology; 2008 Jun; 19(22):225203. PubMed ID: 21825755
[TBL] [Abstract][Full Text] [Related]
17. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.
Minh Triet N; Thai Duy L; Hwang BU; Hanif A; Siddiqui S; Park KH; Cho CY; Lee NE
ACS Appl Mater Interfaces; 2017 Sep; 9(36):30722-30732. PubMed ID: 28825301
[TBL] [Abstract][Full Text] [Related]
18. Effects of La Incorporation in Hf Based Dielectric on Leakage Conduction and Carrier Scattering Mechanisms.
You SW; Lee DH; Nguyen MC; Jeon YS; Tong DT; Bang HJ; Jeong JK; Choi R
J Nanosci Nanotechnol; 2015 Oct; 15(10):7590-2. PubMed ID: 26726378
[TBL] [Abstract][Full Text] [Related]
19. Determination of the Optimal Sensing Temperature in Pt/Ta₂O₅/MoO₃ Schottky Contacted Nanobelt Straddling Heterojunction.
Cheung KW; Yu J; Ho D
Sensors (Basel); 2018 Nov; 18(11):. PubMed ID: 30400558
[TBL] [Abstract][Full Text] [Related]
20. Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes.
Nicholls J; Dimitrijev S; Tanner P; Han J
Sci Rep; 2019 Mar; 9(1):3754. PubMed ID: 30842531
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
