These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

108 related articles for article (PubMed ID: 22966715)

  • 1. The oxides growth during high-temperature oxidation of Si1-xGe(x) nanowires.
    Kim SW; Kim SY; Ko DH
    J Nanosci Nanotechnol; 2012 Jul; 12(7):6096-9. PubMed ID: 22966715
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Oxidation Mechanism of Si
    Bae JM; Jeong KS; Lee WJ; Baik M; Park J; Cho MH
    ACS Appl Mater Interfaces; 2017 Oct; 9(42):37411-37418. PubMed ID: 28984123
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si1-xGe(x) Channel.
    Lee CC; Liu CH; Chen ZH; Tzeng TL
    J Nanosci Nanotechnol; 2015 Mar; 15(3):2173-8. PubMed ID: 26413636
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Axial Si-Ge Heterostructure Nanowires as Lithium-Ion Battery Anodes.
    Stokes K; Flynn G; Geaney H; Bree G; Ryan KM
    Nano Lett; 2018 Sep; 18(9):5569-5575. PubMed ID: 30091609
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Thermal transport in epitaxial Si
    Sachat AE; Reparaz JS; Spiece J; Alonso MI; Goñi AR; Garriga M; Vaccaro PO; Wagner MR; Kolosov OV; Sotomayor Torres CM; Alzina F
    Nanotechnology; 2017 Dec; 28(50):505704. PubMed ID: 29160238
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Stranski-Krastanow growth of germanium on silicon nanowires.
    Pan L; Lew KK; Redwing JM; Dickey EC
    Nano Lett; 2005 Jun; 5(6):1081-5. PubMed ID: 15943447
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ge oxidation in the remaining cores of Si(1-x)Ge(x) nanowires after prolonged oxidation.
    Kim SY; Kim SW; Ko DH; Lee HJ
    J Nanosci Nanotechnol; 2012 Apr; 12(4):3650-4. PubMed ID: 22849188
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.
    Zhang X; Kulik J; Dickey EC
    J Nanosci Nanotechnol; 2007 Feb; 7(2):717-20. PubMed ID: 17450821
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.
    Periwal P; Sibirev NV; Patriarche G; Salem B; Bassani F; Dubrovskii VG; Baron T
    Nano Lett; 2014 Sep; 14(9):5140-7. PubMed ID: 25118977
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Band-gap modulation in single-crystalline Si1-xGex nanowires.
    Yang JE; Jin CB; Kim CJ; Jo MH
    Nano Lett; 2006 Dec; 6(12):2679-84. PubMed ID: 17163687
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation.
    Sun YT; Lee HY; Wang IT; Wen CY
    Nanotechnology; 2019 Jul; 30(28):284002. PubMed ID: 30913543
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Electrical and Structural Properties of Si
    Behrle R; Krause V; Seifner MS; Köstler B; Dick KA; Wagner M; Sistani M; Barth S
    Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36838995
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Room temperature oxidation of Cu(3)Ge films grown on Si and Si(1-x)Ge(x) substrates.
    Liang HH; Luo JS; Lin WT
    Micron; 2002; 33(6):561-4. PubMed ID: 12020702
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nano-cones formation on a surface of Ge, Si crystals and Si1-xGe(x) solid solution by laser radiation.
    Medvid A; Onufrijevs P; Lyutovich K; Oehme M; Kasper E
    J Nanosci Nanotechnol; 2011 Oct; 11(10):9088-94. PubMed ID: 22400307
    [TBL] [Abstract][Full Text] [Related]  

  • 15. The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.
    Wu J; Wieligor M; Zerda TW; Coffer JL
    Nanoscale; 2010 Dec; 2(12):2657-67. PubMed ID: 20931125
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si
    Jang K; Kim Y; Park J; Yi J
    Materials (Basel); 2019 May; 12(11):. PubMed ID: 31146346
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Self-assembly of nanohills in Si1-xGe(x)/Si hetero-epitaxial structure due to Ge redistribution induced by laser radiation.
    Medvid A; Onufrijevs P; Lyutovich K; Oehme M; Kasper E; Dmitruk N; Kondratenko O; Dmitruk I; Pundyk I
    J Nanosci Nanotechnol; 2010 Feb; 10(2):1094-8. PubMed ID: 20352761
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
    Hu J; Jiang Y; Meng X; Lee CS; Lee ST
    Small; 2005 Apr; 1(4):429-38. PubMed ID: 17193468
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires.
    Clark TE; Nimmatoori P; Lew KK; Pan L; Redwing JM; Dickey EC
    Nano Lett; 2008 Apr; 8(4):1246-52. PubMed ID: 18321076
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.
    Jung JH; Yoon HS; Kim YL; Song MS; Kim Y; Chen ZG; Zou J; Choi DY; Kang JH; Joyce HJ; Gao Q; Hoe Tan H; Jagadish C
    Nanotechnology; 2010 Jul; 21(29):295602. PubMed ID: 20585174
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.