286 related articles for article (PubMed ID: 23003631)
1. Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC.
Soltamov VA; Soltamova AA; Baranov PG; Proskuryakov II
Phys Rev Lett; 2012 Jun; 108(22):226402. PubMed ID: 23003631
[TBL] [Abstract][Full Text] [Related]
2. Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.
Mu Z; Zargaleh SA; von Bardeleben HJ; Fröch JE; Nonahal M; Cai H; Yang X; Yang J; Li X; Aharonovich I; Gao W
Nano Lett; 2020 Aug; 20(8):6142-6147. PubMed ID: 32644809
[TBL] [Abstract][Full Text] [Related]
3. Coherent control of single spins in silicon carbide at room temperature.
Widmann M; Lee SY; Rendler T; Son NT; Fedder H; Paik S; Yang LP; Zhao N; Yang S; Booker I; Denisenko A; Jamali M; Momenzadeh SA; Gerhardt I; Ohshima T; Gali A; Janzén E; Wrachtrup J
Nat Mater; 2015 Feb; 14(2):164-8. PubMed ID: 25437256
[TBL] [Abstract][Full Text] [Related]
4. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.
Soltamov VA; Yavkin BV; Tolmachev DO; Babunts RA; Badalyan AG; Davydov VY; Mokhov EN; Proskuryakov II; Orlinskii SB; Baranov PG
Phys Rev Lett; 2015 Dec; 115(24):247602. PubMed ID: 26705655
[TBL] [Abstract][Full Text] [Related]
5. Room temperature coherent control of defect spin qubits in silicon carbide.
Koehl WF; Buckley BB; Heremans FJ; Calusine G; Awschalom DD
Nature; 2011 Nov; 479(7371):84-7. PubMed ID: 22051676
[TBL] [Abstract][Full Text] [Related]
6. All-optical coherent population trapping with defect spin ensembles in silicon carbide.
Zwier OV; O'Shea D; Onur AR; van der Wal CH
Sci Rep; 2015 Jun; 5():10931. PubMed ID: 26047132
[TBL] [Abstract][Full Text] [Related]
7. Polytype control of spin qubits in silicon carbide.
Falk AL; Buckley BB; Calusine G; Koehl WF; Dobrovitski VV; Politi A; Zorman CA; Feng PX; Awschalom DD
Nat Commun; 2013; 4():1819. PubMed ID: 23652007
[TBL] [Abstract][Full Text] [Related]
8. Optical charge state control of spin defects in 4H-SiC.
Wolfowicz G; Anderson CP; Yeats AL; Whiteley SJ; Niklas J; Poluektov OG; Heremans FJ; Awschalom DD
Nat Commun; 2017 Nov; 8(1):1876. PubMed ID: 29192288
[TBL] [Abstract][Full Text] [Related]
9. Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
Li Q; Wang JF; Yan FF; Zhou JY; Wang HF; Liu H; Guo LP; Zhou X; Gali A; Liu ZH; Wang ZQ; Sun K; Guo GP; Tang JS; Li H; You LX; Xu JS; Li CF; Guo GC
Natl Sci Rev; 2022 May; 9(5):nwab122. PubMed ID: 35668749
[TBL] [Abstract][Full Text] [Related]
10. Vanadium spin qubits as telecom quantum emitters in silicon carbide.
Wolfowicz G; Anderson CP; Diler B; Poluektov OG; Heremans FJ; Awschalom DD
Sci Adv; 2020 May; 6(18):eaaz1192. PubMed ID: 32426475
[TBL] [Abstract][Full Text] [Related]
11. Electrometry by optical charge conversion of deep defects in 4H-SiC.
Wolfowicz G; Whiteley SJ; Awschalom DD
Proc Natl Acad Sci U S A; 2018 Jul; 115(31):7879-7883. PubMed ID: 30012622
[TBL] [Abstract][Full Text] [Related]
12. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide.
Kraus H; Simin D; Kasper C; Suda Y; Kawabata S; Kada W; Honda T; Hijikata Y; Ohshima T; Dyakonov V; Astakhov GV
Nano Lett; 2017 May; 17(5):2865-2870. PubMed ID: 28350468
[TBL] [Abstract][Full Text] [Related]
13. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.
Radulaski M; Widmann M; Niethammer M; Zhang JL; Lee SY; Rendler T; Lagoudakis KG; Son NT; Janzén E; Ohshima T; Wrachtrup J; Vučković J
Nano Lett; 2017 Mar; 17(3):1782-1786. PubMed ID: 28225630
[TBL] [Abstract][Full Text] [Related]
14. Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms.
Kukushkin SA; Osipov AV
Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34639976
[TBL] [Abstract][Full Text] [Related]
15. All-optical formation of coherent dark states of silicon-vacancy spins in diamond.
Pingault B; Becker JN; Schulte CH; Arend C; Hepp C; Godde T; Tartakovskii AI; Markham M; Becher C; Atatüre M
Phys Rev Lett; 2014 Dec; 113(26):263601. PubMed ID: 25615329
[TBL] [Abstract][Full Text] [Related]
16. Optical Polarization of Nuclear Spins in Silicon Carbide.
Falk AL; Klimov PV; Ivády V; Szász K; Christle DJ; Koehl WF; Gali Á; Awschalom DD
Phys Rev Lett; 2015 Jun; 114(24):247603. PubMed ID: 26197014
[TBL] [Abstract][Full Text] [Related]
17. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions.
Niethammer M; Widmann M; Rendler T; Morioka N; Chen YC; Stöhr R; Hassan JU; Onoda S; Ohshima T; Lee SY; Mukherjee A; Isoya J; Son NT; Wrachtrup J
Nat Commun; 2019 Dec; 10(1):5569. PubMed ID: 31804489
[TBL] [Abstract][Full Text] [Related]
18. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide.
Lew CT; Sewani VK; Iwamoto N; Ohshima T; McCallum JC; Johnson BC
Phys Rev Lett; 2024 Apr; 132(14):146902. PubMed ID: 38640398
[TBL] [Abstract][Full Text] [Related]
19. Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide.
Mukesh N; Márkus BG; Jegenyes N; Bortel G; Bezerra SM; Simon F; Beke D; Gali A
Micromachines (Basel); 2023 Jul; 14(8):. PubMed ID: 37630053
[TBL] [Abstract][Full Text] [Related]
20. Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide.
Xue Y; Titze M; Mack J; Yang Z; Zhang L; Su SS; Zhang Z; Fan L
Nano Lett; 2024 Feb; 24(7):2369-2375. PubMed ID: 38348823
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
