These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

403 related articles for article (PubMed ID: 23103408)

  • 21. The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.
    Beyer J; Buyanova IA; Suraprapapich S; Tu CW; Chen WM
    Nanotechnology; 2012 Apr; 23(13):135705. PubMed ID: 22421164
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer.
    Troyon M; Smaali K
    Nanotechnology; 2008 Jun; 19(25):255709. PubMed ID: 21828669
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.
    Wang T; Vaxenburg R; Liu W; Rupich SM; Lifshitz E; Efros AL; Talapin DV; Sibener SJ
    ACS Nano; 2015 Jan; 9(1):725-32. PubMed ID: 25531244
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.
    Tatebayashi J; Liang BL; Laghumavarapu RB; Bussian DA; Htoon H; Klimov V; Balakrishnan G; Dawson LR; Huffaker DL
    Nanotechnology; 2008 Jul; 19(29):295704. PubMed ID: 21730609
    [TBL] [Abstract][Full Text] [Related]  

  • 25. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.
    He J; Yadavalli K; Zhao Z; Li N; Hao Z; Wang KL; Jacob AP
    Nanotechnology; 2008 Nov; 19(45):455607. PubMed ID: 21832784
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Electron dephasing of a GaAs/AlGaAs quantum well with self-assembled InAs dots.
    Li L; Wang J; Kim GH; Ritchie DA
    J Phys Condens Matter; 2012 Sep; 24(38):385301. PubMed ID: 22945470
    [TBL] [Abstract][Full Text] [Related]  

  • 27. InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.
    Strauss M; Höfling S; Forchel A
    Nanotechnology; 2009 Dec; 20(50):505601. PubMed ID: 19907066
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.
    Tommila J; Schramm A; Hakkarainen TV; Dumitrescu M; Guina M
    Nanotechnology; 2013 Jun; 24(23):235204. PubMed ID: 23676532
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing.
    Chen JF; Yu CC; Yang CH
    Nanotechnology; 2008 Dec; 19(49):495201. PubMed ID: 21730663
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.
    Lin SY; Tseng CC; Chung TH; Liao WH; Chen SH; Chyi JI
    Nanotechnology; 2010 Jul; 21(29):295304. PubMed ID: 20601753
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots.
    Kondratenko SV; Nikolenko AS; Vakulenko OV; Valakh MY; Yukhymchuk VO; Dvurechenskii AV; Nikiforov AI
    Nanotechnology; 2008 Apr; 19(14):145703. PubMed ID: 21817769
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.
    Park MH; Kim HS; Park SJ; Song JD; Kim SH; Lee YJ; Choi WJ; Park JH
    J Nanosci Nanotechnol; 2014 Apr; 14(4):2955-9. PubMed ID: 24734716
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots.
    Dai L; Bremner SP; Tan S; Wang S; Zhang G; Liu Z
    Nanoscale Res Lett; 2014; 9(1):278. PubMed ID: 24948897
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
    Souaf M; Baira M; Nasr O; Alouane MHH; Maaref H; Sfaxi L; Ilahi B
    Materials (Basel); 2015 Jul; 8(8):4699-4709. PubMed ID: 28793465
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area.
    Moskalenko E; Larsson A; Holtz PO
    Nanotechnology; 2010 Aug; 21(34):345401. PubMed ID: 20671363
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Four-wave mixing dynamics of excitons in InGaAs self-assembled quantum dots.
    Borri P; Langbein W
    J Phys Condens Matter; 2007 Jul; 19(29):295201. PubMed ID: 21483053
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Symmetric band structures and asymmetric ultrafast electron and hole relaxations in silicon and germanium quantum dots: time-domain ab initio simulation.
    Hyeon-Deuk K; Madrid AB; Prezhdo OV
    Dalton Trans; 2009 Dec; (45):10069-77. PubMed ID: 19904435
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures.
    Fillipov S; Puttisong Y; Huang Y; Buyanova IA; Suraprapapich S; Tu CW; Chen WM
    ACS Nano; 2015 Jun; 9(6):5741-9. PubMed ID: 25965972
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer.
    Sabaeian M; Khaledi-Nasab A
    Appl Opt; 2012 Jun; 51(18):4176-85. PubMed ID: 22722295
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications.
    Lin PH; Ghosh S; Chang GE
    Sensors (Basel); 2024 Feb; 24(4):. PubMed ID: 38400421
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 21.