242 related articles for article (PubMed ID: 23123435)
1. Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.
Kong X; Albert S; Bengoechea-Encabo A; Sanchez-Garcia MA; Calleja E; Trampert A
Nanotechnology; 2012 Dec; 23(48):485701. PubMed ID: 23123435
[TBL] [Abstract][Full Text] [Related]
2. Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.
Knelangen M; Hanke M; Luna E; Schrottke L; Brandt O; Trampert A
Nanotechnology; 2011 Sep; 22(36):365703. PubMed ID: 21836335
[TBL] [Abstract][Full Text] [Related]
3. Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns.
Kong X; Ristić J; Sanchez-Garcia MA; Calleja E; Trampert A
Nanotechnology; 2011 Oct; 22(41):415701. PubMed ID: 21914935
[TBL] [Abstract][Full Text] [Related]
4. Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.
Kong X; Li H; Albert S; Bengoechea-Encabo A; Sanchez-Garcia MA; Calleja E; Draxl C; Trampert A
Nanotechnology; 2016 Feb; 27(6):065705. PubMed ID: 26759358
[TBL] [Abstract][Full Text] [Related]
5. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE.
Tourbot G; Bougerol C; Grenier A; Den Hertog M; Sam-Giao D; Cooper D; Gilet P; Gayral B; Daudin B
Nanotechnology; 2011 Feb; 22(7):075601. PubMed ID: 21233547
[TBL] [Abstract][Full Text] [Related]
6. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
Ra YH; Navamathavan R; Park JH; Lee CR
ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
[TBL] [Abstract][Full Text] [Related]
7. Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
Albert S; Bengoechea-Encabo A; Sánchez-García MA; Kong X; Trampert A; Calleja E
Nanotechnology; 2013 May; 24(17):175303. PubMed ID: 23558410
[TBL] [Abstract][Full Text] [Related]
8. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
Borysiuk J; Zytkiewicz ZR; Sobanska M; Wierzbicka A; Klosek K; Korona KP; Perkowska PS; Reszka A
Nanotechnology; 2014 Apr; 25(13):135610. PubMed ID: 24598248
[TBL] [Abstract][Full Text] [Related]
9. Structural and electrical characterization of monolithic core-double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy.
Sadaf SM; Ra YH; Zhao S; Szkopek T; Mi Z
Nanoscale; 2019 Mar; 11(9):3888-3895. PubMed ID: 30758042
[TBL] [Abstract][Full Text] [Related]
10. Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy.
Sinito C; Corfdir P; Pfüller C; Gao G; Bartolomé J; Kölling S; Rodil Doblado A; Jahn U; Lähnemann J; Auzelle T; Zettler JK; Flissikowski T; Koenraad P; Grahn HT; Geelhaar L; Fernández-Garrido S; Brandt O
Nano Lett; 2019 Sep; 19(9):5938-5948. PubMed ID: 31385709
[TBL] [Abstract][Full Text] [Related]
11. Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy.
Galopin E; Largeau L; Patriarche G; Travers L; Glas F; Harmand JC
Nanotechnology; 2011 Jun; 22(24):245606. PubMed ID: 21508494
[TBL] [Abstract][Full Text] [Related]
12. Nanowires as semi-rigid substrates for growth of thick, In(x)Ga(1-x)N (x > 0.4) epi-layers without phase segregation for photoelectrochemical water splitting.
Pendyala C; Jasinski JB; Kim JH; Vendra VK; Lisenkov S; Menon M; Sunkara MK
Nanoscale; 2012 Oct; 4(20):6269-75. PubMed ID: 22968333
[TBL] [Abstract][Full Text] [Related]
13. Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires.
Hetzl M; Winnerl J; Francaviglia L; Kraut M; Döblinger M; Matich S; Fontcuberta I Morral A; Stutzmann M
Nanoscale; 2017 Jun; 9(21):7179-7188. PubMed ID: 28513695
[TBL] [Abstract][Full Text] [Related]
14. Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy.
Eljarrat A; Estradé S; Gačević Z; Fernández-Garrido S; Calleja E; Magén C; Peiró F
Microsc Microanal; 2012 Oct; 18(5):1143-54. PubMed ID: 23058502
[TBL] [Abstract][Full Text] [Related]
15. Current path in light emitting diodes based on nanowire ensembles.
Limbach F; Hauswald C; Lähnemann J; Wölz M; Brandt O; Trampert A; Hanke M; Jahn U; Calarco R; Geelhaar L; Riechert H
Nanotechnology; 2012 Nov; 23(46):465301. PubMed ID: 23092897
[TBL] [Abstract][Full Text] [Related]
16. Structural and chemical evolution of the spontaneous core-shell structures of AlxGa1-xN/GaN nanowires.
Fath Allah R; Ben T; González D
Microsc Microanal; 2014 Aug; 20(4):1254-61. PubMed ID: 24698205
[TBL] [Abstract][Full Text] [Related]
17. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.
Park JH; Kim MH; Kissinger S; Lee CR
Nanoscale; 2013 Apr; 5(7):2959-66. PubMed ID: 23455517
[TBL] [Abstract][Full Text] [Related]
18. Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires.
Nicolai L; Gačević Ž; Calleja E; Trampert A
Nanoscale Res Lett; 2019 Jul; 14(1):232. PubMed ID: 31300916
[TBL] [Abstract][Full Text] [Related]
19. InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.
Park Y; Jahangir S; Park Y; Bhattacharya P; Heo J
Opt Express; 2015 Jun; 23(11):A650-6. PubMed ID: 26072889
[TBL] [Abstract][Full Text] [Related]
20. Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.
Kret S; Dłużewski P; Szczepańska A; Zak M; Czernecki R; Kryśko M; Leszczyński M; Maciejewski G
Nanotechnology; 2007 Nov; 18(46):465707. PubMed ID: 21730494
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
