These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
165 related articles for article (PubMed ID: 23163608)
1. High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering. Walker DE; Major M; Yazdi MB; Klyszcz A; Haeming M; Bonrad K; Melzer C; Donner W; von Seggern H ACS Appl Mater Interfaces; 2012 Dec; 4(12):6835-41. PubMed ID: 23163608 [TBL] [Abstract][Full Text] [Related]
2. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors. Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187 [TBL] [Abstract][Full Text] [Related]
3. Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors. Kilian D; Polster S; Vogeler I; Jank MP; Frey L; Peukert W ACS Appl Mater Interfaces; 2014 Aug; 6(15):12245-51. PubMed ID: 25029269 [TBL] [Abstract][Full Text] [Related]
4. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443 [TBL] [Abstract][Full Text] [Related]
5. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics. Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566 [TBL] [Abstract][Full Text] [Related]
6. Experimental investigation of charge carrier transport in organic thin-film transistors with "buried surface layers". Wei Q; Hashimoto K; Tajima K ACS Appl Mater Interfaces; 2011 Feb; 3(2):139-42. PubMed ID: 21271745 [TBL] [Abstract][Full Text] [Related]
7. High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors. Kim MG; Kim HS; Ha YG; He J; Kanatzidis MG; Facchetti A; Marks TJ J Am Chem Soc; 2010 Aug; 132(30):10352-64. PubMed ID: 20662515 [TBL] [Abstract][Full Text] [Related]
8. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor. Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390 [TBL] [Abstract][Full Text] [Related]
10. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. Kim HS; Kim MG; Ha YG; Kanatzidis MG; Marks TJ; Facchetti A J Am Chem Soc; 2009 Aug; 131(31):10826-7. PubMed ID: 19603806 [TBL] [Abstract][Full Text] [Related]
11. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis. Faber H; Lin YH; Thomas SR; Zhao K; Pliatsikas N; McLachlan MA; Amassian A; Patsalas PA; Anthopoulos TD ACS Appl Mater Interfaces; 2015 Jan; 7(1):782-90. PubMed ID: 25490965 [TBL] [Abstract][Full Text] [Related]
12. Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure. Kim JI; Ji KH; Jang M; Yang H; Choi R; Jeong JK ACS Appl Mater Interfaces; 2011 Jul; 3(7):2522-8. PubMed ID: 21663320 [TBL] [Abstract][Full Text] [Related]
13. Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors. Lee KH; Park JH; Yoo YB; Jang WS; Oh JY; Chae SS; Moon KJ; Myoung JM; Baik HK ACS Appl Mater Interfaces; 2013 Apr; 5(7):2585-92. PubMed ID: 23461268 [TBL] [Abstract][Full Text] [Related]
14. Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing. Avis C; Hwang HR; Jang J ACS Appl Mater Interfaces; 2014 Jul; 6(14):10941-5. PubMed ID: 24877653 [TBL] [Abstract][Full Text] [Related]
15. Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors. Hennek JW; Kim MG; Kanatzidis MG; Facchetti A; Marks TJ J Am Chem Soc; 2012 Jun; 134(23):9593-6. PubMed ID: 22625409 [TBL] [Abstract][Full Text] [Related]
16. Solution-prepared hybrid-nanoparticle dielectrics for high-performance low-voltage organic thin-film transistors. Gan Y; Cai QJ; Li CM; Yang HB; Lu ZS; Gong C; Chan-Park MB ACS Appl Mater Interfaces; 2009 Oct; 1(10):2230-6. PubMed ID: 20355857 [TBL] [Abstract][Full Text] [Related]
17. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs. Branquinho R; Salgueiro D; Santos L; Barquinha P; Pereira L; Martins R; Fortunato E ACS Appl Mater Interfaces; 2014 Nov; 6(22):19592-9. PubMed ID: 25354332 [TBL] [Abstract][Full Text] [Related]
18. Low-temperature, high-performance, solution-processed indium oxide thin-film transistors. Han SY; Herman GS; Chang CH J Am Chem Soc; 2011 Apr; 133(14):5166-9. PubMed ID: 21417268 [TBL] [Abstract][Full Text] [Related]
19. Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process. Na JW; Rim YS; Kim HJ; Lee JH; Hong S; Kim HJ ACS Appl Mater Interfaces; 2017 Sep; 9(35):29849-29856. PubMed ID: 28812360 [TBL] [Abstract][Full Text] [Related]
20. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors. Jeong Y; Pearson C; Kim HG; Park MY; Kim H; Do LM; Petty MC ACS Appl Mater Interfaces; 2016 Jan; 8(3):2061-70. PubMed ID: 26704352 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]