These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

216 related articles for article (PubMed ID: 23187068)

  • 1. In situ doping of catalyst-free InAs nanowires.
    Ghoneim H; Mensch P; Schmid H; Bessire CD; Rhyner R; Schenk A; Rettner C; Karg S; Moselund KE; Riel H; Björk MT
    Nanotechnology; 2012 Dec; 23(50):505708. PubMed ID: 23187068
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires.
    Becker J; Hill MO; Sonner M; Treu J; Döblinger M; Hirler A; Riedl H; Finley JJ; Lauhon L; Koblmüller G
    ACS Nano; 2018 Feb; 12(2):1603-1610. PubMed ID: 29385327
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
    Thelander C; Dick KA; Borgström MT; Fröberg LE; Caroff P; Nilsson HA; Samuelson L
    Nanotechnology; 2010 May; 21(20):205703. PubMed ID: 20413840
    [TBL] [Abstract][Full Text] [Related]  

  • 4. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.
    Gutsche C; Lysov A; Regolin I; Blekker K; Prost W; Tegude FJ
    Nanoscale Res Lett; 2011 Dec; 6(1):65. PubMed ID: 27502686
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
    Yang ZX; Han N; Wang F; Cheung HY; Shi X; Yip S; Hung T; Lee MH; Wong CY; Ho JC
    Nanoscale; 2013 Oct; 5(20):9671-6. PubMed ID: 24056889
    [TBL] [Abstract][Full Text] [Related]  

  • 6. n-type doping and morphology of GaAs nanowires in Aerotaxy.
    Metaferia W; Sivakumar S; Persson AR; Geijselaers I; Wallenberg LR; Deppert K; Samuelson L; Magnusson MH
    Nanotechnology; 2018 Jul; 29(28):285601. PubMed ID: 29664421
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Doping evaluation of InP nanowires for tandem junction solar cells.
    Lindelöw F; Heurlin M; Otnes G; Dagytė V; Lindgren D; Hultin O; Storm K; Samuelson L; Borgström M
    Nanotechnology; 2016 Feb; 27(6):065706. PubMed ID: 26762762
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Obtaining uniform dopant distributions in VLS-grown Si nanowires.
    Koren E; Hyun JK; Givan U; Hemesath ER; Lauhon LJ; Rosenwaks Y
    Nano Lett; 2011 Jan; 11(1):183-7. PubMed ID: 21126102
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Uniform phosphorus doping of untapered germanium nanowires.
    Guilloy K; Pauc N; Gentile P; Robin E; Calvo V
    Nanotechnology; 2016 Dec; 27(48):485701. PubMed ID: 27796273
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Modulation of thermoelectric power factor via radial dopant inhomogeneity in B-doped Si nanowires.
    Zhuge F; Yanagida T; Fukata N; Uchida K; Kanai M; Nagashima K; Meng G; He Y; Rahong S; Li X; Kawai T
    J Am Chem Soc; 2014 Oct; 136(40):14100-6. PubMed ID: 25229842
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
    Koblmüller G; Hertenberger S; Vizbaras K; Bichler M; Bao F; Zhang JP; Abstreiter G
    Nanotechnology; 2010 Sep; 21(36):365602. PubMed ID: 20702932
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.
    Ghalamestani SG; Johansson S; Borg BM; Lind E; Dick KA; Wernersson LE
    Nanotechnology; 2012 Jan; 23(1):015302. PubMed ID: 22155896
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Remote p-doping of InAs nanowires.
    Li HY; Wunnicke O; Borgström MT; Immink WG; van Weert MH; Verheijen MA; Bakkers EP
    Nano Lett; 2007 May; 7(5):1144-8. PubMed ID: 17425372
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires.
    Amit I; Jeon N; Lauhon LJ; Rosenwaks Y
    ACS Appl Mater Interfaces; 2016 Jan; 8(1):128-34. PubMed ID: 26650197
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Identification of an intrinsic source of doping inhomogeneity in vapor-liquid-solid-grown nanowires.
    Connell JG; Yoon K; Perea DE; Schwalbach EJ; Voorhees PW; Lauhon LJ
    Nano Lett; 2013 Jan; 13(1):199-206. PubMed ID: 23237496
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices.
    Hill DJ; Teitsworth TS; Kim S; Christesen JD; Cahoon JF
    ACS Appl Mater Interfaces; 2017 Oct; 9(42):37105-37111. PubMed ID: 28956906
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.
    Habicht S; Zhao QT; Feste SF; Knoll L; Trellenkamp S; Ghyselen B; Mantl S
    Nanotechnology; 2010 Mar; 21(10):105701. PubMed ID: 20154367
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires.
    Blömers C; Rieger T; Grap T; Raux M; Lepsa MI; Lüth H; Grützmacher D; Schäpers T
    Nanotechnology; 2013 Aug; 24(32):325201. PubMed ID: 23863215
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
    Hijazi H; Monier G; Gil E; Trassoudaine A; Bougerol C; Leroux C; Castellucci D; Robert-Goumet C; Hoggan PE; André Y; Isik Goktas N; LaPierre RR; Dubrovskii VG
    Nano Lett; 2019 Jul; 19(7):4498-4504. PubMed ID: 31203632
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.
    Farrell RA; Kinahan NT; Hansel S; Stuen KO; Petkov N; Shaw MT; West LE; Djara V; Dunne RJ; Varona OG; Gleeson PG; Jung SJ; Kim HY; Koleśnik MM; Lutz T; Murray CP; Holmes JD; Nealey PF; Duesberg GS; Krstić V; Morris MA
    Nanoscale; 2012 May; 4(10):3228-36. PubMed ID: 22481430
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.