These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
403 related articles for article (PubMed ID: 23187653)
1. Vertical InGaN light-emitting diode with a retained patterned sapphire layer. Yang YC; Sheu JK; Lee ML; Yen CH; Lai WC; Hon SJ; Ko TK Opt Express; 2012 Nov; 20 Suppl 6():A1019-25. PubMed ID: 23187653 [TBL] [Abstract][Full Text] [Related]
2. Vertical InGaN light-emitting diode with a retained patterned sapphire layer. Yang YC; Sheu JK; Lee ML; Yen CH; Lai WC; Hon SJ; Ko TK Opt Express; 2012 Nov; 20(23):A1019-25. PubMed ID: 23326851 [TBL] [Abstract][Full Text] [Related]
3. Vertical InGaN light-emitting diodes with a sapphire-face-up structure. Yang YC; Sheu JK; Lee ML; Tu SJ; Huang FW; Lai WC; Hon S; Ko TK Opt Express; 2012 Jan; 20(1):A119-24. PubMed ID: 22379672 [TBL] [Abstract][Full Text] [Related]
4. InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film. Sheu JK; Chang KH; Tu SJ; Lee ML; Yang CC; Hsu CK; Lai WC Opt Express; 2010 Nov; 18 Suppl 4():A562-7. PubMed ID: 21165089 [TBL] [Abstract][Full Text] [Related]
5. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure. Sheu JK; Chen FB; Yen WY; Wang YC; Liu CN; Yeh YH; Lee ML Opt Express; 2015 Apr; 23(7):A371-81. PubMed ID: 25968802 [TBL] [Abstract][Full Text] [Related]
6. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate. Ke WC; Lee FW; Chiang CY; Liang ZY; Chen WK; Seong TY ACS Appl Mater Interfaces; 2016 Dec; 8(50):34520-34529. PubMed ID: 27998131 [TBL] [Abstract][Full Text] [Related]
7. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes. Zhao P; Zhao H Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543 [TBL] [Abstract][Full Text] [Related]
8. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN. Lee KJ; Oh S; Kim SJ; Yim SY; Myoung N; Lee K; Kim JS; Jung SH; Chung TH; Park SJ Nanotechnology; 2019 Oct; 30(41):415301. PubMed ID: 31300618 [TBL] [Abstract][Full Text] [Related]
9. Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper. Lau KM; Wong KM; Zou X; Chen P Opt Express; 2011 Jul; 19 Suppl 4():A956-61. PubMed ID: 21747567 [TBL] [Abstract][Full Text] [Related]
10. InGaN-based light-emitting diodes with an embedded conical air-voids structure. Huang YC; Lin CF; Chen SH; Dai JJ; Wang GM; Huang KP; Chen KT; Hsu YH Opt Express; 2011 Jan; 19 Suppl 1():A57-63. PubMed ID: 21263713 [TBL] [Abstract][Full Text] [Related]
11. Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter. Jia T; Zhang M; Zhang G; Hang S; Chu C; Zhang Y; Zhang ZH Opt Express; 2023 Jan; 31(2):2931-2941. PubMed ID: 36785295 [TBL] [Abstract][Full Text] [Related]
12. Enhancing light extraction mechanisms of GaN-based light-emitting diodes through the integration of imprinting microstructures, patterned sapphire substrates, and surface roughness. Lee YC; Ni CH; Chen CY Opt Express; 2010 Nov; 18 Suppl 4():A489-98. PubMed ID: 21165080 [TBL] [Abstract][Full Text] [Related]
13. Fabrication of vertical light emitting diode based on thermal deformation of nanoporous GaN and removable mechanical supporter. Kang JH; Ebaid M; Lee JK; Jeong T; Ryu SW ACS Appl Mater Interfaces; 2014 Jun; 6(11):8683-7. PubMed ID: 24787754 [TBL] [Abstract][Full Text] [Related]
14. The fabrication of a patterned ZnO nanorod array for high brightness LEDs. Park H; Byeon KJ; Yang KY; Cho JY; Lee H Nanotechnology; 2010 Sep; 21(35):355304. PubMed ID: 20689168 [TBL] [Abstract][Full Text] [Related]
15. Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates. Horng RH; Wu BR; Tien CH; Ou SL; Yang MH; Kuo HC; Wuu DS Opt Express; 2014 Jan; 22 Suppl 1():A179-87. PubMed ID: 24921994 [TBL] [Abstract][Full Text] [Related]
16. Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth. Park MJ; Kwon KW; Kim YH; Park SH; Kwak JS J Nanosci Nanotechnol; 2011 May; 11(5):4484-7. PubMed ID: 21780482 [TBL] [Abstract][Full Text] [Related]
17. InGaN light emitting diodes with a laser-treated tapered GaN structure. Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255 [TBL] [Abstract][Full Text] [Related]
18. Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode. Kim HK; Park YJ; Kang JH; Han N; Han M; Ryu BD; Ko KB; Yang JH; Kim YT; Chandramohan S; Jeong H; Jeong MS; Hong CH Opt Lett; 2013 May; 38(9):1491-3. PubMed ID: 23632528 [TBL] [Abstract][Full Text] [Related]
19. High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector. Guo H; Zhang X; Chen H; Zhang P; Liu H; Chang H; Zhao W; Liao Q; Cui Y Opt Express; 2013 Sep; 21(18):21456-65. PubMed ID: 24104020 [TBL] [Abstract][Full Text] [Related]
20. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate]. Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]