156 related articles for article (PubMed ID: 23270331)
1. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.
Zhong A; Hane K
Nanoscale Res Lett; 2012 Dec; 7(1):686. PubMed ID: 23270331
[TBL] [Abstract][Full Text] [Related]
2. Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy.
Tyagi P; Ramesh C; Kushvaha SS; Gupta G; Senthil Kumar M
J Nanosci Nanotechnol; 2020 Jun; 20(6):3919-3924. PubMed ID: 31748096
[TBL] [Abstract][Full Text] [Related]
3. Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.
Zhong A; Fan P; Zhong Y; Zhang D; Li F; Luo J; Xie Y; Hane K
Nanoscale Res Lett; 2018 Feb; 13(1):51. PubMed ID: 29442172
[TBL] [Abstract][Full Text] [Related]
4. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.
Feng ZC; Liu J; Xie D; Nafisa MT; Zhang C; Wan L; Jiang B; Lin HH; Qiu ZR; Lu W; Klein B; Ferguson IT; Liu S
Materials (Basel); 2024 Jun; 17(12):. PubMed ID: 38930290
[TBL] [Abstract][Full Text] [Related]
5. Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy.
Ramesh C; Pandey J; Tyagi P; Soni A; Senthil Kumar M; Kushvaha SS
J Nanosci Nanotechnol; 2020 Jun; 20(6):3866-3872. PubMed ID: 31748088
[TBL] [Abstract][Full Text] [Related]
6. Selectively grown GaN nanowalls and nanogrids for photocatalysis: growth and optical properties.
Winnerl J; Kraut M; Artmeier S; Stutzmann M
Nanoscale; 2019 Mar; 11(10):4578-4584. PubMed ID: 30809617
[TBL] [Abstract][Full Text] [Related]
7. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.
Tamura Y; Hane K
Nanoscale Res Lett; 2015 Dec; 10(1):460. PubMed ID: 26625884
[TBL] [Abstract][Full Text] [Related]
8. Scalable network electrical devices using ZnO nanowalls.
Lee CH; Kim YJ; Lee J; Hong YJ; Jeon JM; Kim M; Hong S; Yi GC
Nanotechnology; 2011 Feb; 22(5):055205. PubMed ID: 21178253
[TBL] [Abstract][Full Text] [Related]
9. Controllable dimension of ZnO nanowalls on GaN/c-Al2O3 substrate by vapor phase epitaxy method.
Song WY; Shin TI; Kang SM; Kim SW; Yang JH; Park MH; Yang CW; Yoon DH
J Nanosci Nanotechnol; 2008 Sep; 8(9):4783-6. PubMed ID: 19049108
[TBL] [Abstract][Full Text] [Related]
10. Characteristics of ZnO nanowall structures grown on GaN template using organometallic chemical vapor deposition.
Wu CC; Wuu DS; Chen TN; Yu TE; Lin PR; Horng RH; Sun S
J Nanosci Nanotechnol; 2008 Aug; 8(8):3851-6. PubMed ID: 19049140
[TBL] [Abstract][Full Text] [Related]
11. Nano-morphology induced additional surface plasmon resonance enhancement of SERS sensitivity in Ag/GaN nanowall network.
Sharvani S; Upadhayaya K; Kumari G; Narayana C; Shivaprasad SM
Nanotechnology; 2015 Nov; 26(46):465701. PubMed ID: 26502004
[TBL] [Abstract][Full Text] [Related]
12. Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
Albert S; Bengoechea-Encabo A; Sánchez-García MA; Kong X; Trampert A; Calleja E
Nanotechnology; 2013 May; 24(17):175303. PubMed ID: 23558410
[TBL] [Abstract][Full Text] [Related]
13. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.
Yu IS; Chang CP; Yang CP; Lin CT; Ma YR; Chen CC
Nanoscale Res Lett; 2014; 9(1):682. PubMed ID: 25593560
[TBL] [Abstract][Full Text] [Related]
14. Nanostars in Highly Si-Doped GaN.
Sawicka M; Turski H; Sobczak K; Feduniewicz-Żmuda A; Fiuczek N; Gołyga O; Siekacz M; Muziol G; Nowak G; Smalc-Koziorowska J; Skierbiszewski C
Cryst Growth Des; 2023 Jul; 23(7):5093-5101. PubMed ID: 37426547
[TBL] [Abstract][Full Text] [Related]
15. Optical properties of ZnMgO nanowalls grown by plasma-assisted molecular beam epitaxy.
Su SC; Lu YM; Zhang ZZ; Shan CX; Li BH; Shen DZ; Yao B; Zhang JY; Zhao DX; Fan XW
J Nanosci Nanotechnol; 2010 Mar; 10(3):1681-4. PubMed ID: 20355557
[TBL] [Abstract][Full Text] [Related]
16. A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining.
Hu FR; Kanamori Y; Ochi K; Zhao Y; Wakui M; Hane K
Nanotechnology; 2008 Jan; 19(3):035305. PubMed ID: 21817568
[TBL] [Abstract][Full Text] [Related]
17. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer.
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
Micron; 2004; 35(6):475-80. PubMed ID: 15120133
[TBL] [Abstract][Full Text] [Related]
18. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
Borysiuk J; Zytkiewicz ZR; Sobanska M; Wierzbicka A; Klosek K; Korona KP; Perkowska PS; Reszka A
Nanotechnology; 2014 Apr; 25(13):135610. PubMed ID: 24598248
[TBL] [Abstract][Full Text] [Related]
19. Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil.
Ramesh C; Tyagi P; Kaswan J; Yadav BS; Shukla AK; Senthil Kumar M; Kushvaha SS
RSC Adv; 2020 Jan; 10(4):2113-2122. PubMed ID: 35494595
[TBL] [Abstract][Full Text] [Related]
20. Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory.
Gridchin VO; Dvoretckaia LN; Kotlyar KP; Reznik RR; Parfeneva AV; Dragunova AS; Kryzhanovskaya NV; Dubrovskii VG; Cirlin GE
Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889566
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]