These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

156 related articles for article (PubMed ID: 23306016)

  • 1. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.
    Baranowski M; Kudrawiec R; Latkowska M; Syperek M; Misiewicz J; Sarmiento T; Harris JS
    J Phys Condens Matter; 2013 Feb; 25(6):065801. PubMed ID: 23306016
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells.
    Baranowski M; Kudrawiec R; Syperek M; Misiewicz J; Sarmiento T; Harris JS
    Nanoscale Res Lett; 2014 Feb; 9(1):81. PubMed ID: 24533740
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.
    Chen CY; Hsieh C; Liao CH; Chung WL; Chen HT; Cao W; Chang WM; Chen HS; Yao YF; Ting SY; Kiang YW; Yang CC; Hu X
    Opt Express; 2012 May; 20(10):11321-35. PubMed ID: 22565753
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Light-hole quantization in the optical response of ultra-wide GaAs/Al(x)Ga(1-x)As quantum wells.
    Solovyev VV; Bunakov VA; Schmult S; Kukushkin IV
    J Phys Condens Matter; 2013 Jan; 25(2):025801. PubMed ID: 23178805
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Distance dependence of energy transfer from InGaN quantum wells to graphene oxide.
    Lin TN; Huang LT; Shu GW; Yuan CT; Shen JL; Lin CA; Chang WH; Chiu CH; Lin DW; Lin CC; Kuo HC
    Opt Lett; 2013 Aug; 38(15):2897-9. PubMed ID: 23903173
    [TBL] [Abstract][Full Text] [Related]  

  • 6. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
    Fu Y; Wang SM; Ferdos F; Sadeghi M; Larsson A
    J Nanosci Nanotechnol; 2002; 2(3-4):421-6. PubMed ID: 12908273
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.
    Shchurova LY; Kulbachinskii VA
    J Nanosci Nanotechnol; 2011 Mar; 11(3):2678-81. PubMed ID: 21449453
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths.
    Chauvin N; Balet L; Alloing B; Zinoni C; Li L; Fiore A; Grenouillet L; Gilet P; Olivier N; Tchelnokov A; Terrier M; Gérard JM
    Opt Lett; 2007 Sep; 32(18):2747-9. PubMed ID: 17873956
    [TBL] [Abstract][Full Text] [Related]  

  • 9. [Raman spectra and photoluminescence spectra of InGaN/GaN multiquantum wells annealed].
    Lü GW; Tang YJ; Li WH; Li ZL; Zhang GY; Du WM
    Guang Pu Xue Yu Guang Pu Fen Xi; 2005 Jan; 25(1):39-43. PubMed ID: 15852814
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure.
    Prasankumar RP; Attaluri RS; Averitt RD; Urayama J; Weisse-Bernstein N; Rotella P; Stintz AD; Krishna S; Taylor AJ
    Opt Express; 2008 Jan; 16(2):1165-73. PubMed ID: 18542190
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Investigation of temperature-dependent photoluminescence in multi-quantum wells.
    Fang Y; Wang L; Sun Q; Lu T; Deng Z; Ma Z; Jiang Y; Jia H; Wang W; Zhou J; Chen H
    Sci Rep; 2015 Jul; 5():12718. PubMed ID: 26228734
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Ahmad I; Avrutin V; Morkoç H; Moore JC; Baski AA
    J Nanosci Nanotechnol; 2007 Aug; 7(8):2889-93. PubMed ID: 17685312
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S; Honma T; Bell GR; Ishii A; Arakawa Y
    Small; 2006 Mar; 2(3):386-9. PubMed ID: 17193056
    [No Abstract]   [Full Text] [Related]  

  • 14. Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
    Liang BL; Wang ZM; Wang XY; Lee JH; Mazur YI; Shih CK; Salamo GJ
    ACS Nano; 2008 Nov; 2(11):2219-24. PubMed ID: 19206386
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Surface-plasmon-enhanced light emitters based on InGaN quantum wells.
    Okamoto K; Niki I; Shvartser A; Narukawa Y; Mukai T; Scherer A
    Nat Mater; 2004 Sep; 3(9):601-5. PubMed ID: 15322535
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.
    Moskalenko ES; Larsson M; Karlsson KF; Holtz PO; Monemar B; Schoenfeld WV; Petroff PM
    Nano Lett; 2007 Jan; 7(1):188-93. PubMed ID: 17212462
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Site-controlled InGaAs quantum dots with tunable emission energy.
    Felici M; Gallo P; Mohan A; Dwir B; Rudra A; Kapon E
    Small; 2009 Apr; 5(8):938-43. PubMed ID: 19235797
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.
    Liu XQ; Lu W; Shen SC; Tan HH; Jagadish C; Zou J
    J Nanosci Nanotechnol; 2001 Dec; 1(4):389-92. PubMed ID: 12914079
    [TBL] [Abstract][Full Text] [Related]  

  • 19. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
    Seravalli L; Trevisi G; Frigeri P; Franchi S; Geddo M; Guizzetti G
    Nanotechnology; 2009 Jul; 20(27):275703. PubMed ID: 19531853
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.
    Wu J; Wang ZM; Dorogan VG; Li S; Mazur YI; Salamo GJ
    Nanoscale; 2011 Apr; 3(4):1485-8. PubMed ID: 21384043
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.