These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
144 related articles for article (PubMed ID: 23361624)
1. The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer. Zhou Y; Han ST; Xu ZX; Roy VA Nanoscale; 2013 Mar; 5(5):1972-9. PubMed ID: 23361624 [TBL] [Abstract][Full Text] [Related]
2. Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate). Zhou Y; Han ST; Xu ZX; Roy VA Nanotechnology; 2012 Aug; 23(34):344014. PubMed ID: 22885601 [TBL] [Abstract][Full Text] [Related]
3. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array. Cho I; Kim BJ; Ryu SW; Cho JH; Cho J Nanotechnology; 2014 Dec; 25(50):505604. PubMed ID: 25426661 [TBL] [Abstract][Full Text] [Related]
4. Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors. Chen H; Cheng N; Ma W; Li M; Hu S; Gu L; Meng S; Guo X ACS Nano; 2016 Jan; 10(1):436-45. PubMed ID: 26673624 [TBL] [Abstract][Full Text] [Related]
5. A low voltage programmable unipolar inverter with a gold nanoparticle monolayer on plastic. Zhou Y; Han ST; Huang LB; Huang J; Yan Y; Zhou L; Roy VA Nanotechnology; 2013 May; 24(20):205202. PubMed ID: 23609318 [TBL] [Abstract][Full Text] [Related]
6. Organic transistor memory with a charge storage molecular double-floating-gate monolayer. Tseng CW; Huang DC; Tao YT ACS Appl Mater Interfaces; 2015 May; 7(18):9767-75. PubMed ID: 25875747 [TBL] [Abstract][Full Text] [Related]
7. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. Lee JS; Cho J; Lee C; Kim I; Park J; Kim YM; Shin H; Lee J; Caruso F Nat Nanotechnol; 2007 Dec; 2(12):790-5. PubMed ID: 18654433 [TBL] [Abstract][Full Text] [Related]
8. Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor. Kim YH; Lee EY; Lee HH; Seo TS ACS Appl Mater Interfaces; 2017 May; 9(19):16375-16380. PubMed ID: 28445035 [TBL] [Abstract][Full Text] [Related]
13. Solution-processable organic dielectrics for graphene electronics. Mattevi C; Colléaux F; Kim H; Lin YH; Park KT; Chhowalla M; Anthopoulos TD Nanotechnology; 2012 Aug; 23(34):344017. PubMed ID: 22885685 [TBL] [Abstract][Full Text] [Related]
14. Graphene nano-floating gate transistor memory on plastic. Jang S; Hwang E; Cho JH Nanoscale; 2014 Dec; 6(24):15286-92. PubMed ID: 25382657 [TBL] [Abstract][Full Text] [Related]
15. Memory effect of low-temperature processed ZnO thin-film transistors having metallic nanoparticles as charge trapping elements. Park YS; Kim SJ; Lyu SH; Lee BH; Sung MM; Lee J; Lee JS J Nanosci Nanotechnol; 2012 Feb; 12(2):1344-7. PubMed ID: 22629953 [TBL] [Abstract][Full Text] [Related]
16. High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles. Jung JH; Kim S; Kim H; Park J; Oh JH Small; 2015 Oct; 11(37):4976-84. PubMed ID: 26153227 [TBL] [Abstract][Full Text] [Related]
17. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. Chang HY; Yang S; Lee J; Tao L; Hwang WS; Jena D; Lu N; Akinwande D ACS Nano; 2013 Jun; 7(6):5446-52. PubMed ID: 23668386 [TBL] [Abstract][Full Text] [Related]
18. Tunable touch sensor and combined sensing platform: toward nanoparticle-based electronic skin. Segev-Bar M; Landman A; Nir-Shapira M; Shuster G; Haick H ACS Appl Mater Interfaces; 2013 Jun; 5(12):5531-41. PubMed ID: 23734966 [TBL] [Abstract][Full Text] [Related]
19. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates. Hanh NH; Jang K; Yi J J Nanosci Nanotechnol; 2016 May; 16(5):4860-3. PubMed ID: 27483835 [TBL] [Abstract][Full Text] [Related]
20. Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory. Sarkar KJ; Pal B; Banerji P ACS Omega; 2019 Feb; 4(2):4312-4319. PubMed ID: 31459636 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]