271 related articles for article (PubMed ID: 23368138)
1. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide.
Riedel D; Fuchs F; Kraus H; Väth S; Sperlich A; Dyakonov V; Soltamova AA; Baranov PG; Ilyin VA; Astakhov GV
Phys Rev Lett; 2012 Nov; 109(22):226402. PubMed ID: 23368138
[TBL] [Abstract][Full Text] [Related]
2. Room temperature coherent control of defect spin qubits in silicon carbide.
Koehl WF; Buckley BB; Heremans FJ; Calusine G; Awschalom DD
Nature; 2011 Nov; 479(7371):84-7. PubMed ID: 22051676
[TBL] [Abstract][Full Text] [Related]
3. Polytype control of spin qubits in silicon carbide.
Falk AL; Buckley BB; Calusine G; Koehl WF; Dobrovitski VV; Politi A; Zorman CA; Feng PX; Awschalom DD
Nat Commun; 2013; 4():1819. PubMed ID: 23652007
[TBL] [Abstract][Full Text] [Related]
4. Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.
Mu Z; Zargaleh SA; von Bardeleben HJ; Fröch JE; Nonahal M; Cai H; Yang X; Yang J; Li X; Aharonovich I; Gao W
Nano Lett; 2020 Aug; 20(8):6142-6147. PubMed ID: 32644809
[TBL] [Abstract][Full Text] [Related]
5. Optical signatures of silicon-vacancy spins in diamond.
Müller T; Hepp C; Pingault B; Neu E; Gsell S; Schreck M; Sternschulte H; Steinmüller-Nethl D; Becher C; Atatüre M
Nat Commun; 2014; 5():3328. PubMed ID: 24534908
[TBL] [Abstract][Full Text] [Related]
6. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
Nagy R; Niethammer M; Widmann M; Chen YC; Udvarhelyi P; Bonato C; Hassan JU; Karhu R; Ivanov IG; Son NT; Maze JR; Ohshima T; Soykal ÖO; Gali Á; Lee SY; Kaiser F; Wrachtrup J
Nat Commun; 2019 Apr; 10(1):1954. PubMed ID: 31028260
[TBL] [Abstract][Full Text] [Related]
7. Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
Li Q; Wang JF; Yan FF; Zhou JY; Wang HF; Liu H; Guo LP; Zhou X; Gali A; Liu ZH; Wang ZQ; Sun K; Guo GP; Tang JS; Li H; You LX; Xu JS; Li CF; Guo GC
Natl Sci Rev; 2022 May; 9(5):nwab122. PubMed ID: 35668749
[TBL] [Abstract][Full Text] [Related]
8. Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide.
Morioka N; Babin C; Nagy R; Gediz I; Hesselmeier E; Liu D; Joliffe M; Niethammer M; Dasari D; Vorobyov V; Kolesov R; Stöhr R; Ul-Hassan J; Son NT; Ohshima T; Udvarhelyi P; Thiering G; Gali A; Wrachtrup J; Kaiser F
Nat Commun; 2020 May; 11(1):2516. PubMed ID: 32433556
[TBL] [Abstract][Full Text] [Related]
9. Quantum register based on individual electronic and nuclear spin qubits in diamond.
Dutt MV; Childress L; Jiang L; Togan E; Maze J; Jelezko F; Zibrov AS; Hemmer PR; Lukin MD
Science; 2007 Jun; 316(5829):1312-6. PubMed ID: 17540898
[TBL] [Abstract][Full Text] [Related]
10. All-optical coherent population trapping with defect spin ensembles in silicon carbide.
Zwier OV; O'Shea D; Onur AR; van der Wal CH
Sci Rep; 2015 Jun; 5():10931. PubMed ID: 26047132
[TBL] [Abstract][Full Text] [Related]
11. All-optical formation of coherent dark states of silicon-vacancy spins in diamond.
Pingault B; Becker JN; Schulte CH; Arend C; Hepp C; Godde T; Tartakovskii AI; Markham M; Becher C; Atatüre M
Phys Rev Lett; 2014 Dec; 113(26):263601. PubMed ID: 25615329
[TBL] [Abstract][Full Text] [Related]
12. Photoelectric detection of electron spin resonance of nitrogen-vacancy centres in diamond.
Bourgeois E; Jarmola A; Siyushev P; Gulka M; Hruby J; Jelezko F; Budker D; Nesladek M
Nat Commun; 2015 Oct; 6():8577. PubMed ID: 26486014
[TBL] [Abstract][Full Text] [Related]
13. Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide.
Wang JF; Liu L; Liu XD; Li Q; Cui JM; Zhou DF; Zhou JY; Wei Y; Xu HA; Xu W; Lin WX; Yan JW; He ZX; Liu ZH; Hao ZH; Li HO; Liu W; Xu JS; Gregoryanz E; Li CF; Guo GC
Nat Mater; 2023 Apr; 22(4):489-494. PubMed ID: 36959503
[TBL] [Abstract][Full Text] [Related]
14. Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature.
Wang JF; Yan FF; Li Q; Liu ZH; Liu H; Guo GP; Guo LP; Zhou X; Cui JM; Wang J; Zhou ZQ; Xu XY; Xu JS; Li CF; Guo GC
Phys Rev Lett; 2020 Jun; 124(22):223601. PubMed ID: 32567924
[TBL] [Abstract][Full Text] [Related]
15. Protecting a Diamond Quantum Memory by Charge State Control.
Pfender M; Aslam N; Simon P; Antonov D; Thiering G; Burk S; Fávaro de Oliveira F; Denisenko A; Fedder H; Meijer J; Garrido JA; Gali A; Teraji T; Isoya J; Doherty MW; Alkauskas A; Gallo A; Grüneis A; Neumann P; Wrachtrup J
Nano Lett; 2017 Oct; 17(10):5931-5937. PubMed ID: 28872881
[TBL] [Abstract][Full Text] [Related]
16. Collectively enhanced interactions in solid-state spin qubits.
Weimer H; Yao NY; Lukin MD
Phys Rev Lett; 2013 Feb; 110(6):067601. PubMed ID: 23432308
[TBL] [Abstract][Full Text] [Related]
17. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.
Soltamov VA; Yavkin BV; Tolmachev DO; Babunts RA; Badalyan AG; Davydov VY; Mokhov EN; Proskuryakov II; Orlinskii SB; Baranov PG
Phys Rev Lett; 2015 Dec; 115(24):247602. PubMed ID: 26705655
[TBL] [Abstract][Full Text] [Related]
18. Coherent control of the silicon-vacancy spin in diamond.
Pingault B; Jarausch DD; Hepp C; Klintberg L; Becker JN; Markham M; Becher C; Atatüre M
Nat Commun; 2017 May; 8():15579. PubMed ID: 28555618
[TBL] [Abstract][Full Text] [Related]
19. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.
Radulaski M; Widmann M; Niethammer M; Zhang JL; Lee SY; Rendler T; Lagoudakis KG; Son NT; Janzén E; Ohshima T; Wrachtrup J; Vučković J
Nano Lett; 2017 Mar; 17(3):1782-1786. PubMed ID: 28225630
[TBL] [Abstract][Full Text] [Related]
20. Integrated Manipulation and Addressing of Spin Defect in Diamond.
Ma MQ; Wu YK; Liu ZW; Zang HX; Shan LK; Jiang W; Liu Y; Ren XF; Chen XD; Guo GC; Sun FW
Nano Lett; 2024 Feb; 24(5):1660-1666. PubMed ID: 38266180
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]